Low-cost and high-efficiency monolithically integrated nanoscale-based light emitter techniques can be used in, for example, electronic display applications and spectroscopy applications using spectrometers. Using various techniques, a light emitter can include quantum dots (QDs) and can be arranged to emit light in mono-band (e.g., one wavelength) or in broad-band (e.g., more than one wavelength) such as in the visible to mid-infrared range, e.g., from about 365 nm to about 10 m. The light emitter nanotechnology can be based on a nanoscale wafer manufacturing for displays and spectroscopy applications.

A wavelength conversion element includes a wavelength conversion layer containing a plurality of phosphor particles and an inorganic binder that bonds the phosphor particles to each other and a substrate that holds the wavelength conversion layer and contains alumina and air cavities. The substrate has an apparent air cavity ratio that is greater than or equal to 10% and smaller than or equal to 30%. The substrate has a median diameter of particles of the alumina that is greater than or equal to 0.1 m and smaller than or equal to 1.0 m.

A semiconductor light emitting device includes a substrate a semiconductor light emitting element that is disposed on the substrate and that emits light along a direction substantially parallel to a main surface of the substrate a wavelength conversion element that is disposed on a light emitting side of the semiconductor light emitting element, that absorbs a portion of the light emitted from the semiconductor light emitting element, and that emits light having a wavelength different from that of the absorbed light; and a holding member that is disposed on the substrate and holds the wavelength conversion element.

The present invention relates to novel phosphor mixtures and to a light-emitting device which comprises at least one of the novel phosphor mixtures. The phosphor mixtures can be used in phosphor-converted LEDs with a semiconductor that emits in the violet spectral region. The present invention furthermore relates to a lighting system which may comprise the light-emitting devices according to the invention, and to a dynamic lighting system. The present invention furthermore relates to a process for the preparation of the phosphor mixtures according to the invention and to the use thereof in light-emitting devices for use in general lighting and/or in specialty lighting.

A wavelength conversion element includes a wavelength conversion layer having a first surface which excitation light enters, and a second surface opposed to the first surface, and adapted to perform wavelength conversion on the excitation light, a substrate disposed so as to be opposed to the second surface, and a bonding layer adapted to bond the wavelength conversion layer and the substrate to each other, and the bonding layer has a first bonding material disposed in a first region opposed to an incident area of the excitation light in the second surface, and a second bonding material disposed in at least a second region located on an outer periphery of the first region and lower in Young's modulus than the first bonding material.

Provided is a laser crystallization apparatus including a beam generator generating an input laser beam, a beam converter dividing an input laser beam incident from a beam generator into a plurality of sub laser beams and disposed to have a predetermined rotation angle with respect to an optical axis parallel to a traveling direction of an input laser beam, and a beam concentrator condensing a plurality of sub laser beams and outputting an output laser beam having a beam profile having a predetermined beam width. Accordingly, a width of a stiffness area of a beam profile of an input laser beam may increase and a width of a high intensity area may decrease. Accordingly, the number of shots for the stiffness area at specific point of an amorphous silicon film may increase. Accordingly, a gradual dehydrogenation effect on an amorphous silicon film may be implemented. Accordingly, occurrence of defects in a polycrystalline silicon film formed by laser crystallization may be minimized or prevented.

A method for detecting abnormality in a light emitting device including a semiconductor laser element that is pulse-driven by pulse-control to emit excitation light, a wavelength conversion member including a phosphor and that emits fluorescent light by being irradiated with the excitation light, and a light receiving element disposed on a light extraction side of the wavelength conversion member and that detects the excitation light, the method includes: pulse-controlling an applied voltage with a pulse width shorter than a time from a start of voltage application until an optical intensity of light extracted from the wavelength conversion member reaches a maximum intensity, thereby pulse-driving the semiconductor laser element to achieve laser oscillation; measuring an optical intensity of the excitation light, or optical intensities of both the excitation light and the fluorescent light; and determining whether or not the optical intensity or the optical intensities falls within a prescribed range.

An optical semiconductor component package includes a base, a frame, a lid, and a light absorbing member located on an inner surface of the lid. The base is plate-like and has a first surface including a mount area in which an optical semiconductor component is mountable. The frame is located on the first surface and surrounds the mount area. The lid is plate-like and is bonded to the frame and covers the mount area. The light absorbing member is located on a second surface of the lid facing the mount area, and has a plurality of recesses on its surface.

Provided is a wavelength conversion member that can be adjusted in chromaticity with high accuracy and a production method therefor. A wavelength conversion member 1 having a first principal surface 1a and a second principal surface 1b opposed to each other includes a glass matrix 2 and phosphor particles 3 disposed in the glass matrix 2, wherein concentrations of the phosphor particles 3 in the first principal surface 1a and in the second principal surface 1b are lower than concentrations of the phosphor particles 3 in surface layer bottom planes 1c and 1d located 20 m inward from the first principal surface 1a and 20 m inward from the second principal surface 1b, respectively.

The technology described in this document can be used to implement an optical device for producing optical pulses that includes an optical oscillator including at least one optical arm including at least one piece of fiber and at least one optical filter, a starting arm coupled to the at least one optical arm to generate spikes of radiation for the optical oscillator to start pulsation, and an optical switch coupled between the optical oscillator and the starting arm to connect the starting arm to the at least one optical arm to start the optical oscillator using the spikes of radiation generated by the starting arm.