H01S5/06236

Augmented semiconductor lasers with spontaneous emissions blockage

A device and a method to produce an augmented-laser (ATLAS) comprising a bi-stable resistive system (BRS) integrated in series with a semiconductor laser. The laser exhibits reduction/inhibition of the Spontaneous Emission (SE) below lasing threshold by leveraging the abrupt resistance switch of the BRS. The laser system comprises a semiconductor laser and a BRS operating as a reversible switch. The BRS operates in a high resistive state in which a semiconductor laser is below a lasing threshold and emitting in a reduced spontaneous emission regime, and a low resistive state in which a semiconductor laser is above or equal to a lasing threshold and emitting in a stimulated emission regime. The BRS operating as a reversible switch is electrically connected in series across two independent chips or on a single wafer. The BRS is formed using insulator-to-metal transition (IMT) materials or is formed using threshold-switching selectors (TSS).

Method and device for combining laser beams

The invention relates to the field of laser technology and can be used for more efficient optical pumping of laser media in laser generators and amplifiers. The invention can be used for the efficient optical pumping of practically all types of lasers, provided that the absorption profile of the pumped medium is sufficiently broadband. The invention discloses a method and device for combining at least two laser beams of different wavelengths, the polarization states of which are substantially orthogonal, into an exit beam by using a polarizing beamsplitter which spatially combines two beams in mutually orthogonal polarization states, and then changing the polarization state of one of the beams relative to the other using a spectrally selective polarization filter such that the polarization state of the exit beam becomes substantially identical for all of the wavelengths of the exit beam, thus permitting the subsequent combining thereof with another beam.

LIGHT SOURCE DEVICE
20220294180 · 2022-09-15 · ·

A light source device includes: a laser diode including an emission end surface for emitting laser light and a rear end surface opposite to the emission end surface; a reflecting member that reflects a portion of the laser light emitted from the emission end surface of the laser diode; a photodetector configured to detect light that is reflected at the reflecting member; and a light-shielding member disposed between the rear end surface of the laser diode and the photodetector, the light-shielding member configured to shield at least a portion of light emitted from the rear end surface of the laser diode.

Light source device
11381057 · 2022-07-05 · ·

A light source device includes: a laser diode configured to emit laser light; a substrate directly or indirectly supporting the laser diode; a glass cap secured to the substrate and covering the laser diode, the glass cap comprising a front glass wall configured to transmit the laser light that is emitted from the laser diode, the front glass wall having an incident surface on which the laser light is incident and an emission surface from which the laser light exits; and a photodetector directly or indirectly supported by the substrate and located outside of the glass cap. The photodetector is configured to detect light reflected at the front glass wall and is transmitted through the glass cap.

Laser module and laser apparatus
11309683 · 2022-04-19 · ·

A laser module includes: a laser device that emits a laser beam including a major polarization component and a minor polarization component; a beam splitter that splits the laser beam into the major polarization component and the minor polarization component and that directs the major polarization component and the minor polarization component in different directions; an optical fiber that is optically coupled to the major polarization component split by the beam splitter and externally outputs the major polarization component; a package housing that houses the laser device and that has an inner surface including a minor polarization component irradiation portion that is irradiated by the minor polarization component split by the beam splitter; and a temperature measurement element that is attached to the package housing and that detects a temperature change of the minor polarization component irradiation portion.

ADDRESSABLE VERTICAL CAVITY SURFACE EMITTING LASER ARRAY FOR GENERATING STRUCTURED LIGHT PATTERNS
20210313778 · 2021-10-07 ·

An addressable vertical cavity surface emitting laser (VCSEL) array may generate structured light in dot patterns. The VCSEL array includes a plurality of traces that control different groups of VCSELs, such that each group of VCSELs may be individually controlled. The VCSEL groups are arranged such that they emit a dot pattern, and by modulating which groups of VCSELs are active a density of the dot pattern may be adjusted. The VCSEL array may be part of a depth projector that projects the dot pattern into a local area. A projection assembly may replicate the dot pattern in multiple tiles.

Semiconductor Laser

A semiconductor laser is provided with: an active layer that excites a transverse electric (TE) mode and a transverse magnetic (TM) mode of light and constitutes at least a part of a resonator guiding the TE mode and the TM mode of light; and a diffraction grating as a frequency difference setting structure that sets the difference in oscillation frequency between the TE mode and the TM mode of light higher than a relaxation-oscillation frequency

AUGMENTED SEMICONDUCTOR LASERS WITH SPONTANEOUS EMISSIONS BLOCKAGE
20210288468 · 2021-09-16 ·

A device and a method to produce an augmented-laser (ATLAS) comprising a bi-stable resistive system (BRS) integrated in series with a semiconductor laser. The laser exhibits reduction/inhibition of the Spontaneous Emission (SE) below lasing threshold by leveraging the abrupt resistance switch of the BRS. The laser system comprises a semiconductor laser and a BRS operating as a reversible switch. The BRS operates in a high resistive state in which a semiconductor laser is below a lasing threshold and emitting in a reduced spontaneous emission regime, and a low resistive state in which a semiconductor laser is above or equal to a lasing threshold and emitting in a stimulated emission regime. The BRS operating as a reversible switch is electrically connected in series across two independent chips or on a single wafer. The BRS is formed using insulator-to-metal transition (IMT) materials or is formed using threshold-switching selectors (TSS).

LIGHT SOURCE DEVICE
20210119409 · 2021-04-22 · ·

A light source device includes: a laser diode configured to emit laser light; a substrate directly or indirectly supporting the laser diode; a glass cap secured to the substrate and covering the laser diode, the glass cap comprising a front glass wall configured to transmit the laser light that is emitted from the laser diode, the front glass wall having an incident surface on which the laser light is incident and an emission surface from which the laser light exits; and a photodetector directly or indirectly supported by the substrate and located outside of the glass cap. The photodetector is configured to detect light reflected at the front glass wall and is transmitted through the glass cap.

Grating Emitter Systems with Controlled Polarization
20210119410 · 2021-04-22 ·

A grating emitter method and system for modulating the polarization of an optical beam, such as one for transmission through free-space or use in an atomic clock.