An addressable vertical cavity surface emitting laser (VCSEL) array may generate structured light in dot patterns. The VCSEL array includes a plurality of traces that control different groups of VCSELs, such that each group of VCSELs may be individually controlled. The VCSEL groups are arranged such that they emit a dot pattern, and by modulating which groups of VCSELs are active a density of the dot pattern may be adjusted. The VCSEL array may be part of a depth projector that projects the dot pattern into a local area. A projection assembly may replicate the dot pattern in multiple tiles.

A laser module includes: a laser device that emits a laser beam including a major polarization component and a minor polarization component; a beam splitter that splits the laser beam into the major polarization component and the minor polarization component and that directs the major polarization component and the minor polarization component in different directions; an optical fiber that is optically coupled to the major polarization component split by the beam splitter and externally outputs the major polarization component; a package housing that houses the laser device and that has an inner surface including a minor polarization component irradiation portion that is irradiated by the minor polarization component split by the beam splitter; and a temperature measurement element that is attached to the package housing and that detects a temperature change of the minor polarization component irradiation portion.

The invention relates to an optoelectronic device comprising a semiconductor layer 10 formed from a central segment 20 and at least two lateral segments forming tensioning arms 30 that extend along a longitudinal axis A1. The semiconductor layer 10 furthermore comprises at least two lateral segments forming electrical biasing arms 40 that extend along a transverse axis A2 orthogonal to the axis A1.

A multi-wavelength laser apparatus is provided. The multi-wavelength laser apparatus may include a meta-mirror layer having a surface in which a plurality of patterns are formed, a laser emitter disposed on the meta-mirror layer, and an upper-mirror layer disposed on the laser emitter. The multi-wavelength laser apparatus may further include a conductive graphene layer between the meta-mirror layer and the laser emitter.

Embodiments provide a light source having a coherent light generator arrangement configured to generate at least one output light, and a waveguide arrangement optically coupled to the coherent light generator arrangement, the waveguide arrangement including at least one first resonator element and at least one second resonator element arranged in different orientations, wherein the waveguide arrangement is configured to interact with the at least one output light to cause the at least one first resonator element and the at least one second resonator element to emit respective first and second optical signals to co-operatively interact with each other to generate an output optical signal, and wherein the light source is configured to change a polarization characteristic of the output optical signal in response to at least one electrical signal applied to the light source to vary at least one of respective magnitudes of the first and second optical signals relative to each other.

A tunable laser including: an optical cavity including a first and second end mirrors, and a center mirror; a quantum well gain region between the end mirrors; and a transparent heat spreader bonded to the quantum well gain region; wherein the optical cavity is configured to generate resonant laser radiation between the end mirrors; the quantum well gain region includes at least one quantum well that is substantially aligned with an antinode of the resonant laser radiation and is located at a fixed distance to the center mirror; the distance from the first end mirror to the center mirror is optimized to maintain maximum output power, and the distance from the second end mirror to the center mirror is adjustable for tuning the laser to a desired output wavelength; the center mirror maintains an antinode of the resonant radiation at a fixed phase relationship with the center mirror.

The invention relates to the field of laser technology and can be used for more efficient optical pumping of laser media in laser generators and amplifiers. The invention can be used for the efficient optical pumping of practically all types of lasers, provided that the absorption profile of the pumped medium is sufficiently broadband. The invention discloses a method and device for combining at least two laser beams of different wavelengths, the polarization states of which are substantially orthogonal, into an exit beam by using a polarizing beamsplitter which spatially combines two beams in mutually orthogonal polarization states, and then changing the polarization state of one of the beams relative to the other using a spectrally selective polarization filter such that the polarization state of the exit beam becomes substantially identical for all of the wavelengths of the exit beam, thus permitting the subsequent combining thereof with another beam.

An artificial saturable absorber uses additive pulse mode-locking to enable pulse operation of an on-chip laser operation. Four different artificial saturable absorbers are disclosed. The first includes an integrated coupler, two arms each containing some implementation of the end-reflector, and a phase bias element in one arm. The second includes an integrated directional coupler, two integrated waveguide arms, and another integrated coupler as an output. The third includes an integrated birefringent element, integrated birefringent-free waveguide, and integrated polarizer. And the fourth includes a multimode waveguide that allows for different modes to propagate in such a way that the difference in the spatial distribution of intensity causes a nonlinear phase difference between the modes. These are just some examples of an on-chip fully integrated artificial saturable absorber with instantaneous recovery time that allow for generation of sub-femtosecond optical pulses at high repetition rates using passive mode-locking.

A multi-wavelength laser apparatus is provided. The multi-wavelength laser apparatus may include a meta-mirror layer having a surface in which a plurality of patterns are formed, a laser emitter disposed on the meta-mirror layer, and an upper-mirror layer disposed on the laser emitter. The multi-wavelength laser apparatus may further include a conductive graphene layer between the meta-mirror layer and the laser emitter.

An artificial saturable absorber uses additive pulse mode-locking to enable pulse operation of an on-chip laser operation. Four different artificial saturable absorbers are disclosed. The first includes an integrated coupler, two arms each containing some implementation of the end-reflector, and a phase bias element in one arm. The second includes an integrated directional coupler, two integrated waveguide arms, and another integrated coupler as an output. The third includes an integrated birefringent element, integrated birefringent-free waveguide, and integrated polarizer. And the fourth includes a multimode waveguide that allows for different modes to propagate in such a way that the difference in the spatial distribution of intensity causes a nonlinear phase difference between the modes. These are just some examples of an on-chip fully integrated artificial saturable absorber with instantaneous recovery time that allow for generation of sub-femtosecond optical pulses at high repetition rates using passive mode-locking.