A tunable laser that includes an array of parallel optical amplifiers is described. The laser may also include an intracavity NM coupler that couples power between a cavity mirror and the array of parallel optical amplifiers. Phase adjusters in optical paths between the NM coupler and the optical amplifiers can be used to adjust an amount of power output from M1 ports of the NM coupler. A tunable wavelength filter is incorporated in the laser cavity to select a lasing wavelength.

A system for continuously phase tuning an optical signal includes one optical switch coupled to a phase modulator having a first waveguide with a first phase shifter and a second waveguide with a second phase shifter. The optical switch alternately switches between the first and second phase shifters to phase shift the optical signal, respectively. The continuously phase tuning system further includes a loop mirror that alternately receives the phase shifted optical signal from the first and second waveguides in accordance with the switching, via corresponding first and second mirror inputs, respectively, and reflects the phase shifted optical signal back to the same first or second mirror input at which the phase shifted optical signal was received. First and second phase values of the first and second phase shifters are determined such that overall phase change continues to accumulate substantially linearly.

A compact diode laser achieves high-power, short duration output pulses by separating the lasing action from the pulse-generating mechanism. A diode seed source is configured for gain-switching via a variable RF source. A time lens element includes an intensity modulation device, a phase modulation device, and a pulse compressor. The intensity modulation device carves shorter pulses from the long gain-switched seed pulses, the phase modulation device adds chirp, and the pulse compressor compensates for the chirp while producing high-power short-duration output pulses.

A laser radar device includes a light source module, a collimating module, an optical phase-controlled array, a processing module, and a receiving module. The collimating module collimates the laser beam emitted by the light source module. The optical phase-controlled array deflects the collimated laser beam and reflects the deflected laser beam for making the reflected laser beam to illuminate at a target object. The receiving module receives the laser beam reflected by the target object and converts the received laser beam into electric signals. The processing module calculate a distance between the laser radar device and the target object based on the received electric signals. An accuracy of calculating the distance between the laser radar device and the target object is improved.

An artificial saturable absorber uses additive pulse mode-locking to enable pulse operation of an on-chip laser operation. Four different artificial saturable absorbers are disclosed. The first includes an integrated coupler, two arms each containing some implementation of the end-reflector, and a phase bias element in one arm. The second includes an integrated directional coupler, two integrated waveguide arms, and another integrated coupler as an output. The third includes an integrated birefringent element, integrated birefringent-free waveguide, and integrated polarizer. And the fourth includes a multimode waveguide that allows for different modes to propagate in such a way that the difference in the spatial distribution of intensity causes a nonlinear phase difference between the modes. These are just some examples of an on-chip fully integrated artificial saturable absorber with instantaneous recovery time that allow for generation of sub-femtosecond optical pulses at high repetition rates using passive mode-locking.

Provided is a tunable laser device. The tunable laser device includes a lower clad layer, first to third quantum well patterns disposed on the lower clad layer and arranged in a first direction parallel to a top surface of the lower clad layer, an upper clad layer disposed on the first quantum well pattern, and first grating patterns disposed between the third quantum well pattern and the lower clad layer. The first to third quantum well patterns are arranged in the first direction parallel to a top surface of the lower clad layer, the upper clad layer includes a p-type conductive clad layer, the upper clad layer includes an n-type conductive clad layer, and the third quantum well pattern is electrically intrinsic. When a reverse bias is applied to the upper clad layer, the third quantum well pattern, and the lower clad layer, the third quantum well pattern is changed in refractive index.

A laser system including a seed laser and an optical amplification subsystem, receiving an output of the seed laser and providing an amplified laser output, the optical amplification subsystem including a first plurality of amplifier assemblies, each of the first plurality of amplifier assemblies including a second plurality of optical amplifiers, and phase control circuitry including phase modulating functionality associated with each of the first plurality of amplifier assemblies.

The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InOaAs. The CGH is composed of AlGaAs.

An optical source is presented comprising a laser and an optical filter in optical communication with the laser. The laser comprises an optical gain section; and an optical phase control section. The filter is configured to receive light output from the laser and filter the said received light. The source is configured to input the filtered light back into the laser.

A tunable hybrid laser has a gain chip and a wavelength selection chip. The wavelength selection chip includes a wavelength selective loop reflector. The wavelength selective loop reflector is configured to receive the amplified lightwave from the gain chip. The wavelength selective loop reflector includes a single optical coupler and a micro-ring resonator (MMR). The single optical coupler splits the amplified lightwave and provides portions thereof to different branches of the MRR. The MRR permits selection of a desired wavelength and reflects the portions of the amplified lightwave at the desired wavelength back to the single optical coupler, which combines the portions of the amplified lightwave at the desired wavelength to generate a reflection lightwave and a transmission lightwave. The reflection lightwave is returned to the gain chip to form the external cavity and the transmission lightwave is output from the tunable hybrid laser.