H01S5/06246

Photonic Integrated Circuit Including Compact Lasers With Extended Tunability

Consistent with the present disclosure, a compact laser with extended tunability (CLET) is provided that includes multiple segments or sections, at least one of which is curved, bent or non-collinear with other segments, so that the CLET has a compact form factor either as a singular laser or when integrated with other devices. The term CLET, as used herein, refers to any of the laser configurations disclosed herein having mirrors and a bent, angled or curved part, portion or section between such mirrors. If bent, the bent portion is preferably oriented at an angle of at least 30 degrees relative to other portions of the CLET. Alternatively, the curve or bend portion may be distributed over different sections of the CLET over a series of arcs, for example. The waveguide extending between the mirrors is continuous, such that light propagating along the waveguide is not divided or split. The waveguide also constitutes a continuous waveguide path.

LASER SYSTEM INCLUDING OPTICAL AMPLIFICATION SUBSYSTEM PROVIDING AN AMPLIFIED LASER OUTPUT
20170125980 · 2017-05-04 · ·

A laser system including a seed laser and an optical amplification subsystem, receiving an output of the seed laser and providing an amplified laser output, the optical amplification subsystem including a first plurality of amplifier assemblies, each of the first plurality of amplifier assemblies including a second plurality of optical amplifiers, and phase control circuitry including phase modulating functionality associated with each of the first plurality of amplifier assemblies.

INTEGRATED HIGH-POWER TUNABLE LASER WITH ADJUSTABLE OUTPUTS
20170098920 · 2017-04-06 · ·

A tunable laser that includes an array of parallel optical amplifiers is described. The laser may also include an intracavity NM coupler that couples power between a cavity mirror and the array of parallel optical amplifiers. Phase adjusters in optical paths between the NM coupler and the optical amplifiers can be used to adjust an amount of power output from M-1 ports of the NM coupler. A tunable wavelength filter is incorporated in the laser cavity to select a lasing wavelength.

Laser device, and exposure device and inspection device provided with laser device
09608400 · 2017-03-28 · ·

A laser device, includes: a laser light generating unit generates laser lights with first and second wavelengths; an amplifying unit amplifies the lights with first and second wavelengths the first and the second amplified lights; a wavelength converting unit that generates a light output, either of first converted light wavelength conversion of the first amplified light and the second amplified light, or of the first converted light and the second converted light wavelength conversion of the second amplified light; and a control unit that controls operation of the laser light generating unit, wherein: the control unit controls an output condition of the light output by adjusting a temporal overlap, of the first converted light and the second amplified light, or the first and second converted lights, through control of relative timings of the laser light with the first and second wavelengths.

Laser system including optical amplification subsystem providing an amplified laser output
09584224 · 2017-02-28 · ·

A laser system including a seed laser and an optical amplification subsystem, receiving an output of the seed laser and providing an amplified laser output, the optical amplification subsystem including a first plurality of amplifier assemblies, each of the first plurality of amplifier assemblies including a second plurality of optical amplifiers, and phase control circuitry including phase modulating functionality associated with each of the first plurality of amplifier assemblies.

VERTICAL-CAVITY SURFACE-EMITTING LASER WITH A REGULATED DOMINANT POLARIZATION STATE
20250105593 · 2025-03-27 ·

A vertical-cavity surface-emitting laser (VCSEL) may include a distributed Bragg reflector (DBR) stack. The DBR stack may include a mirror structure over a cavity region. The DBR stack may include an etch stop layer over the mirror structure. The DBR stack may include a grating layer over the etch stop layer. The grating layer may include a grating structure associated with polarization of output light emitted by the VCSEL.

Integrated high-power tunable laser with adjustable outputs
09559487 · 2017-01-31 · ·

A tunable laser that includes an array of parallel optical amplifiers is described. The laser may also include an intracavity NM coupler that couples power between a cavity mirror and the array of parallel optical amplifiers. Phase adjusters in optical paths between the NM coupler and the optical amplifiers can be used to adjust an amount of power output from M1 ports of the NM coupler. A tunable wavelength filter is incorporated in the laser cavity to select a lasing wavelength.

EXTERNAL CAVITY LASER BASED WAVELENGTH DIVISION MULTIPLEXING SUPERCHANNEL TRANSCEIVERS
20170026131 · 2017-01-26 ·

A technique relates to a superchannel. Laser cavities include a first laser cavity, a next laser cavity, through a last laser cavity. Modulators include a first modulator, a next modulator, through a last modulator, each having a direct input, an add port, and an output. A concatenated arrangement of the laser cavities is configured to form the superchannel, which includes the last laser cavity coupled to the direct input of the last modulator, and the output of the last modulator coupled to the add port of the next modulator. The arrangement includes the next laser cavity coupled to direct input of the next modulator, and the output of the next modulator coupled to add port of first modulator, along with the first laser cavity coupled to direct input of the first modulator, and the output of first modulator coupled to input of a multiplexer, thus forming the superchannel into multiplexer.

Laser device, and laser waveform control method

A laser apparatus includes a semiconductor laser element, a waveform calculation unit for calculating input waveform data, a driver circuit for supplying a drive current having a temporal waveform according to the input waveform data to the semiconductor laser element, an optical amplifier for amplifying laser light output from the semiconductor laser element, and a light waveform detection unit for detecting a waveform of laser light after the amplification output from the optical amplifier. The waveform calculation unit compares the waveform of the laser light after the amplification detected by the light waveform detection unit with a target waveform, adjusts a temporal waveform of the input waveform data, and brings the waveform of the laser light after the amplification close to the target waveform.

SEMICONDUCTOR LIGHT EMITTING DEVICE

A semiconductor light emitting device includes: a plurality of iPM lasers each having a first surface and a second surface opposite to the first surface and outputting light from the first surface; and a drive circuit that supplies a drive current to cause each of the plurality of iPM lasers to emit light. The drive circuit includes: a current source circuit common to the plurality of iPM lasers; a plurality of switch sections provided corresponding to the plurality of iPM lasers, respectively, for ON/OFF switching of the drive current; and a switch operating section that individually operates each of the plurality of switch sections.