A semiconductor laser source including a Mach-Zehnder interferometer, this interferometer including first and second arms. Each of the arms is divided into a plurality of consecutive sections, the effective index of each section located immediately after a preceding section being different from the effective index of this preceding section. The lengths of the various sections meet the following condition: $\underset{n=1}{\overset{N_2}{.Math.}}{L}_{2,n}{\mathrm{neff}}_{2,n}-\underset{n=1}{\overset{N_1}{.Math.}}{L}_{1,n}{\mathrm{neff}}_{1,n}=k_f{\lambda }_{\mathrm{Si}}$
where: k.sub.f is a preset integer number higher than or equal to 1, N.sub.1 and N.sub.2 are the numbers of sections in the first and second arms, respectively, L.sub.1,n and L.sub.2,n are the lengths of the nth sections of the first and second arms, respectively, neff.sub.1,n and neff.sub.2,n are the effective indices of the nth sections of the first and second arms, respectively. The first and second arms each comprise a gain-generating section.

Systems and methods are provided for controlling and/or modifying operation of a red, green, blue (RGB) laser assembly for creating images in mixed-reality environments. Initially, the lasers in the RGB laser assembly operate in a low power or non-emitting state. Then, the lasers emit laser light to illuminate a pixel or a group of pixels. This illumination occurs for a period of time spanning less than 15 nanoseconds. By causing the lasers to emit laser light only during this short period of time, the resulting laser light is structured with a reduced spatial coherence level. Once the time period elapses, then the lasers again return to the non-emitting state. This process repeats for each pixel such that the lasers generate pulsed emissions. By operating the lasers with a reduced spatial coherence, undesired visual artifacts can be reduced or eliminated within the target display area.

A broad-spectrum laser for use in a MEMS laser scanning display device is provided. In one example, the broad-spectrum laser includes a laser diode emitter with plural quantum wells each having a different spectral peak. In another example, the broad-spectrum laser includes a laser diode emitter with a tunable absorber to achieve a broadened emissions spectrum. In another example, the broad-spectrum laser includes a laser diode emitter array having plural individual emitters with different spectral peaks.

A broad-spectrum laser for use in a MEMS laser scanning display device is provided. In one example, the broad-spectrum laser includes a laser diode emitter with plural quantum wells each having a different spectral peak. In another example, the broad-spectrum laser includes a laser diode emitter with a tunable absorber to achieve a broadened emissions spectrum. In another example, the broad-spectrum laser includes a laser diode emitter array having plural individual emitters with different spectral peaks.

A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

An edge-emitting laser includes an active gain section and a reflector section optically coupled to the active gain section. The active gain section is configured to amplify an optical power of light across a wavelength range. The reflector section is configured to selectively reflect light of a selected wavelength within the wavelength range. The selected wavelength is tunable via high-frequency index modulation of the reflector section. The active gain section and the reflector section collectively form an optical cavity configured to lase coherent light in the selected wavelength.

A system includes a waveguide and an edge-emitting laser. The edge-emitting laser is configured to lase coherent light into the waveguide. The edge-emitting laser includes an optical cavity having an active gain section and a passive section. The active gain section is configured to amplify an optical power of light reflecting within the optical cavity. The passive section increases a functional length of the optical cavity such that a total length of the optical cavity reduces fringe interference of the coherent light propagating through the waveguide.

Exemplary embodiments of the present disclosure include chip-scale laser sources, such as semiconductor laser sources, that produce directional beams with low spatial coherence. The lasing modes are based on the axial orbit in a stable cavity and have good directionality. To reduce the spatial coherence of emission, the number of transverse lasing modes can be increased by fine-tuning the cavity geometry. Decoherence is reached in as little as several nanoseconds. Such rapid decoherence facilitates applications in ultrafast speckle-free full-field imaging.

An InP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light, being composed of six regions: a left DFB semiconductor laser, a bidirectional SOA, a left passive optical waveguide region, a doped passive optical waveguide region, a right passive optical waveguide region, and a right DFB semiconductor laser, specifically including: an N+ electrode layer, an N-type substrate, an InGaAsP lower confinement layer, an undoped InGaAsP multiple quantum well active region layer, doped particles, distributed feedback Bragg gratings, an InGaAsP upper confinement layer, a P-type heavily doped InP cover layer, a P-type heavily doped InGaAs contact layer, a P+ electrode layer, a light-emitting region, and isolation grooves. It effectively solves problems of bulky volume of the existing chaotic laser source, the time-delay signature of chaotic laser, narrow bandwidth, and low coupling efficiency of the light and the optical waveguide.

An edge-emitting laser includes an active gain section and a reflector section optically coupled to the active gain section. The active gain section is configured to amplify an optical power of light across a wavelength range. The reflector section is configured to selectively reflect light of a selected wavelength within the wavelength range. The selected wavelength is tunable via high-frequency index modulation of the reflector section. The active gain section and the reflector section collectively form an optical cavity configured to lase coherent light in the selected wavelength.