A semiconductor laser device with external resonator with stable longitudinal mode regardless of variation of drive current is disclosed. The device includes: a semiconductor light-emitting element having a pair of end faces with a light emitting section disposed therebetween, and an external resonator configured to oscillate light emitted from the semiconductor light-emitting element, the external resonator being formed by a resonator mirror disposed outside the semiconductor light-emitting element and one of the pair of end faces that is farther from the resonator mirror, wherein, as the semiconductor light-emitting element, a semiconductor light-emitting element having a structure which does not oscillate light emitted therefrom by itself is used. The device further includes a wavelength control element disposed in the optical path within the external resonator and configured to select a wavelength range of the light, and a driver circuit configured to perform fast modulation drive of the semiconductor light-emitting element.

A laser diode driving method that reliably maintains average optical power and extinction ratio is disclosed. The present invention for laser driving uses a preloaded laser diode characteristic curve/table and/or mathematical equations to create a programmable bias and modulation current range. This ensures stable closed-loop operation and prevents system failure if the feedback signal is impaired by confining the operation of the laser diode to a normal operating range.

A method and a device is provided driving an optical laser diode (710, 711) during operation in an optical communication network, by determining a laser transfer function (741, 742) during operation of the laser diode (710, 711) and providing a control signal (750, 749) for driving the laser diode (710, 711) according to the laser transfer function (741, 742). Further, a method for driving a first and a second optical laser diode during operation in an optical communication network is provided. Furthermore, an optical amplifier and a communication system is suggested.

A two-section semiconductor laser includes a gain section and a modulation-independent grating section to reduce chirp. The modulation-independent grating section includes a diffraction grating for reflecting light and forms a laser cavity with the gain section for lasing at a wavelength or range of wavelengths reflected by the diffraction grating. The gain section of the semiconductor laser includes a gain electrode for driving the gain section with at least a modulated RF signal and the grating section includes a grating electrode for driving the grating section with a DC bias current independent of the modulation of the gain section. The semiconductor laser may thus be directly modulated with the modulated RF signal without the modulation significantly affecting the index of refraction in the diffraction grating, thereby reducing chirp.

Electro-absorption modulators (EAM) and monolithically integrated electro-absorption modulated lasers (EML) and methods of fabrication are disclosed. Vertically stacked waveguides for a distributed feedback (DFB) laser, an electro-absorption modulator (EAM) and a passive output waveguide are vertically integrated, and the DFB laser, EAM and output waveguide are optically coupled using laterally tapered vertical optical couplers. Laterally tapered vertical optical couplers provides an alternative to conventional butt-coupling of a laser and EAM, offering improved reliability for high power operation over extended lifetimes. Optionally, the EML comprises monolithically integrated electronic circuitry, e.g., driver and control electronics for the DFB laser and EAM. Beneficially, integrated EAM driver and control circuitry comprises a high-speed electro-optical control loop for very high-speed linearization and temperature compensation, e.g. to enable advanced modulation schemes, such as PAM-4 and DP-QPSK, for analog optical data center interconnect applications. Some embodiments are compatible with fabrication using a single epitaxial growth.

An apparatus at least includes a processor to, after a first signal passes through a narrowband photodetector, perform frequency mix of the first signal with a first reference signal and a second reference signal respectively and perform noise reduction, to obtain a first detection signal and a second detection signal. The first signal is obtained after a measurement signal passes through a filtering module of an optical transmitting end, the measurement signal being transmitted in a path of multiple branches, signals not transmitted in other paths of the multiple branches, a frame structure of the measurement signal including at least one two-tone signal, two tones in the two-tone signal having a fixed tone interval. The processor is to calculate group delays at multiple frequency bins according to the first detection signal and the second detection signal; and determine a phase response of the filtering module of the optical transmitting end in the path according to the group delays at multiple frequency bins.

The upper surface of the semiconductor substrate has a slope descending from the projection in the second direction at an angle of 0-12° to a horizontal plane. The mesa stripe structure has an inclined surface with a slope ascending from the upper surface of the semiconductor substrate at an angle of 45-55° to the horizontal plane, the mesa stripe structure having an upright surface rising from the inclined surface at an angle of 85-95° to the horizontal plane. The buried layer is made from semiconductor with ruthenium doped therein and is in contact with the inclined surface and the upright surface. The inclined surface is as high as 80% or less of height from the upper surface of the semiconductor substrate to a lower surface of the quantum well layer and is as high as 0.3 μm or more.

Each of the pair of lead pins has a first portion protruding from the first surface and a second portion protruding from the second surface. Each of the pair of first lines is connected to the first portion. Each of the pair of second lines is connected to the second portion. A photoelectric device is electrically connected to the pair of first lines. A longer one of the pair of first lines is electrically connected to a shorter one of the pair of second lines, through a corresponding one of the pair of lead pins. A shorter one of the pair of first lines is electrically connected to a longer one of the pair of second lines, through another corresponding one of the pair of lead pins.

The present invention relates to a laser device for polarisation interferometry using a temporally phase-modulated laser source as well as a passive phase delay element. This device, based on the interferences between the electric transverse TE and magnetic transverse TM components, allows improving the sensitivity of measuring apparatuses of the interferometer, ellipsometer or phase-sensitive surface plasmon resonance biosensor type, while proposing a compact and space-saving equipment.

Various embodiments of a laser driver are described herein. In an embodiment, a laser driver system includes: an external set of inductors including a first external inductor and a second external inductor; an internal set of inductors including a first internal inductor and a second internal inductor; and a DC-to-DC convertor configured to bias a first output path defined by the first external inductor and the first internal inductor and a second output path defined by the second external inductor and the second internal inductor.