Apparatus and methods for altering one or more spectral, spatial, or temporal characteristics of a light-emitting device are disclosed. Generally, such apparatus may include a volume Bragg grating (VBG) element that receives input light generated by a light-emitting device, conditions one or more characteristics of the input light, and causes the light-emitting device to generate light having the one or more characteristics of the conditioned light.

The invention relates to a photonic component (1) having at least one semiconductor laser amplifier (200), which has at least one first mirror surface (210a) for coupling and/or decoupling optical radiation (S). The first mirror surface (210a) of the semiconductor laser amplifier (200) is coupled to a photonically integrated chip (100), wherein the chip (100) is arranged such that the chip can emit optical radiation (S) from the chip top side (O100) thereof in the direction of the first mirror surface (210a) and couple said radiation in the semiconductor laser amplifier (200), and wherein the emitting of the radiation (S) away from the chip top side (O100) occurs in the direction of the first mirror surface (210a) at an angle of 90°±20°, in particular perpendicular, to the chip top side (O100).

In various embodiments, the beam parameter product and/or numerical aperture of a laser beam is adjusted utilizing a step-clad optical fiber having a central core, a first cladding, an annular core, and a second cladding.

In various embodiments, optical repositioners and/or angled dispersive elements are utilized to manipulate portions of an input laser beam emitted by a group of laser emitters in order to form a multi-wavelength output beam having a high beam quality factor.

A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly.

In various embodiments, a wavelength beam combining laser system includes a fast-axis collimation lens that is rotated with respect to a plurality of emitters in order to converge the emitted beams onto a dispersive element and/or reduce the size of the multi-wavelength output beam of the system.

Disclosed is a semiconductor laser device assembly including a semiconductor laser device; and a dispersion compensation optical system, where a laser light exited from the semiconductor laser device is incident and exits to control a group velocity dispersion value of the laser light exited from the semiconductor laser device per wavelength.

A method of calibrating a tunable laser includes shifting a filter output peak defined by a tunable optical feedback filter of the tunable laser in an optical spectral domain to align with a target etalon output peak of a plurality of spaced etalon output peaks defined by an etalon of the tunable laser. The method also includes shifting a cavity frequency grid defined by cavity modes of the tunable laser to align a target cavity mode of the cavity frequency grid with the filter output peak and shifting the spaced output peaks defined by the etalon to align a target etalon output peak with a target wavelength of an output wavelength grid. The method includes modifying a bias current and a modulation current of a gain section of the tunable laser to achieve a defined output modulation amplitude and a defined extinction ratio.

A tunable laser wavelength measurement system includes an interferometric wavelength tracking system that uses a combination of interferometric and wavelength reference measurements to directly measure the laser output wavelength, The measurement exhibits the following desirable error signal characteristics: directional information, continuity, low latency, absolute information, high accuracy, high precision, and little or no drift, A tunable laser wavelength control system additionally incorporates electronics to compare the measured laser wavelength to a desired wavelength or wavelength function, and to generate a feedback control signal to control the wavelength of the laser output based on the comparison. In one non-limiting example implementation, the desired wavelength function is repetitive. The difference between the desired wavelength function and the interferometrically-measured wavelength function is taken, and a successive approximation technique is employed to calculate and adjust a repetitive controlling signal to obtain the desired wavelength function.

The multi wavelength laser device includes a laser light source 10 that emits a plurality of laser lights 20 whose fundamental wavelengths differ from one another, a dispersing element 30 that changes the traveling direction of each of the plurality of laser lights according to the wavelength and the incidence direction, and that emits the laser lights in a state in which the laser lights are superposed on the same axis, and a wavelength conversion element 40 that has a plurality of polarization layers disposed therein and having different periods, and that performs wavelength conversion on the fundamental wave laser lights emitted from the dispersing element 30 and placed in the state in which the laser lights are superposed on the same axis, and emits a plurality of laser lights 50 acquired through the wavelength conversion in a state in which the laser lights are superposed on the same axis.