A laser apparatus includes a light source unit and a light combining unit. The light source unit outputs first laser light and second laser light having a wavelength different from that of the first laser light to different optical paths. The light combining unit is optically coupled to the light source unit, and combines the first laser light and the second laser light to generate a burst pulse with a frequency according to a difference between the wavelength of the first laser light and the wavelength of the second laser light. In the light source unit, the wavelengths of the first laser light and the second laser light are set in advance or settable such that the frequency of the burst pulse is 1 GHz or more.

In various embodiments, wavelength beam combining systems feature multiple beam emitters each emitting an individual beam, as well as multiple micro-optics arrangements each disposed optically downstream from a beam emitter to intercept the beam emitted thereby and direct the beam toward a dispersive element for combination into a multi-wavelength output beam.

A wavelength beam combining device includes: a light source unit comprising a plurality of laser light sources, each being configured to emit a laser beam with a predetermined wavelength width; a light condensing member configured to condense the laser beams emitted from the light source unit; a diffraction grating on which the laser beams condensed by the light condensing member are incident; a resonator mirror disposed in an optical path of a diffracted beam from the diffraction grating; and an output control unit configured to turn off, among the plurality of laser light sources, at least laser light sources located farthest from an optical axis of the light condensing member, to reduce an output of the wavelength beam combining device relative to an output of the wavelength beam combining device when all the plurality of laser light sources are turned on.

A semiconductor laser element includes a light emission layer and a plurality of waveguides to arranged in one direction. A semiconductor laser device includes the semiconductor laser element and a first base disposed, via a first adhesion layer, on one face in the lamination direction of the semiconductor laser element. The thermal resistance of the first adhesion layer is, in the arrangement direction of the plurality of waveguides to lower on one end portion side than on the other end portion side.

A laser device includes: a plurality of laser diodes that emit laser beams having different wavelengths; a partial reflection mirror that resonates the plurality of laser beams emitted by the plurality of laser diodes; and a wavelength dispersion element that causes the plurality of laser beams incident from the plurality of laser diodes in different orientations of optical axes of the laser beams to travel to the mirror with the optical axes aligned. Each of the plurality of laser diodes is integrally formed with an adjustment component that is rotatable around an emission end of the laser diode.

In various embodiments, the concentration and deposition of siloxane materials within components of laser systems, such as laser resonators, is reduced or minimized utilizing mitigation systems that may also supply gas having low siloxane levels into multiple different components in series or in parallel.

A laser device includes: a plurality of laser diodes that emit laser beams having different wavelengths; a partial reflection mirror that resonates the plurality of laser beams emitted by the plurality of laser diodes; and a wavelength dispersion element that causes the plurality of laser beams incident from the plurality of laser diodes in different orientations of optical axes of the laser beams to travel to the mirror with the optical axes aligned. Each of the plurality of laser diodes is integrally formed with an adjustment component that is rotatable around an emission end of the laser diode.

In various embodiments, optical repositioners and/or angled dispersive elements are utilized to manipulate portions of an input laser beam emitted by a group of laser emitters in order to form a multi-wavelength output beam having a high beam quality factor.

In various embodiments, laser systems feature beam emitters thermally coupled to heat sinks comprising, consisting essentially of, or consisting of a metal-matrix composite of a thermally conductive metal and a refractory metal. At least a portion of the surface of the heat sink is treated to form a depleted region, and a diamond coating is deposited within and/or over the depleted region. The depleted region is substantially free of the thermally conductive metal or contains the thermally conductive metal at a concentration less than that of the body of the heat sink.

Methods for wavelength determination of widely tunable lasers and systems thereof may be implemented with solid-state laser based photonic systems based on photonic integrated circuit technology as well as discrete table top systems such as widely-tunable external cavity lasers and systems. The methods allow integrated wavelength control enabling immediate system wavelength calibration without the need for external wavelength monitoring instruments. Wavelength determination is achieved using a monolithic solid-state based optical cavity with a well-defined transmission or reflection function acting as a wavelength etalon. The solid-state etalon may be used with a wavelength shift tracking component, e.g., a non-balanced interferometer, to calibrate the entire laser emission tuning curve within one wavelength sweep. The method is particularly useful for integrated photonic systems based on Vernier-filter mechanism where the starting wavelength is not known a-priori, or for compact widely tunable external cavity lasers eliminating the need for calibration of wavelength via external instruments.