A VCSEL can include: an electro-optic modulator between a lasing active region and a light emitting surface. The electro-optic modulator can include: an electro-optically active region; a modulator mirror region over the electro-optically active region; and at least one electrical insulator region separating the modulator mirror region into at least two separate modulator mirror cavities electrically isolated from each other, wherein each separate modulator mirror cavity and a longitudinally aligned portion of the electro-optically active region form an electro-optic modulator cavity. A method of emitting light from a VCSEL can include: emitting a laser beam from the lasing active region along a longitudinal axis; and changing a refractive index of one electro-optic modulator cavity so as to steer the laser beam from the longitudinal axis.

A method and system for large scale Vertical-Cavity Surface-Emitting Laser (VCSEL) binning from wafers to be compatible with a Clock-Data Recovery Unit (CDRU) and/or a VCSEL driver are provided. An illustrative method of binning is provided that includes: for at least a portion of VCSELs on a wafer, measuring a set of representative parameters of the VCSELs, of predetermined DC or small-signal values, and sorting the measured VCSELs into clusters according to the measured set of representative parameters of the VCSELs; further sorting the clusters into sub-groups that comply with specifications of the VCSEL driver; and providing a feedback signal to the CDRU for equalizing control signals provided to the VCSEL driver.

A projector for illuminating a target area is presented. The projector includes an array of emitters positioned on a substrate according to a distribution. Each emitter in the array of emitters has a non-circular emission area. Operation of at least a portion of the array of emitters is controlled based in part on emission instructions to emit light. The light from the projector is configured to illuminate the target area. The projector can be part of a depth camera assembly for depth sensing of a local area, or part of an eye tracker for determining a gaze direction for an eye.

An optoelectronic device includes a substrate and first thin film layers disposed on the substrate and patterned to define a vertical-cavity surface-emitting laser (VCSEL), which is configured to emit optical radiation along an optical axis perpendicular to the substrate. Second thin film layers are disposed over the first thin film layers and are patterned to define an optical modulator in which the optical radiation propagates in a direction parallel to the substrate, and an optical coupler configured to couple the optical radiation from the VCSEL into the optical modulator.

A system for optical data interconnect of a source and a sink includes a first HDMI compatible electrical connector able to receive electrical signals from the source. A first signal converter is connected to the first HDMI compatible electrical connector and includes electronics for conversion of TMDS or FRL electrical signals to optical signals, with the electronics including an optical conversion device. At least one optical fiber is connected to the first signal converter. A second signal converter is connected to the at least one optical fiber and includes electronics for conversion of optical signals to differential electrical signals. A power module for the second signal converter includes a power tap connected to TMDS or FRL circuitry and a first voltage regulator connected to the power tap to provide power to an electrical signal amplifier. A rechargeable battery module is used to trigger power activation of connected ports, with the battery module being connected to the power tap. A second HDMI compatible electrical connector is connected to the second signal converter and able to send signals to the sink.

An optoelectronic device, including: a laser source, including a semiconductor membrane, which rests on a first dielectric layer, and which is formed from a lateral segment doped n-type, a lateral segment doped p-type, and an optically active central segment located between and in contact with the doped lateral segments to form a lateral p-i-n junction lying parallel to the main plane. The semiconductor membrane is produced based on crystalline GaAs, the central segment includes GaAs-based quantum dots, and the doped lateral segments are produced based on AlxGa1-xAs with a proportion of aluminium x comprised between 0.05 and 0.30.

A semiconductor laser element of the present disclosure reducing one-dimensional local oscillation includes a substrate, an active layer, and a phase modulation layer. The phase modulation layer includes a base layer and modified refractive index regions two-dimensionally placed on a reference surface. In a virtual square lattice on the reference surface, the gravity center of each modified refractive index region is placed away from the corresponding lattice point, and an angle of a vector connecting the corresponding lattice point to the gravity center is set individually. A lattice spacing and a light emission wavelength of the active layer satisfy a Γ-point oscillation condition. The gravity center of each modified refractive index region is placed such that the absolute value of the Fourier coefficient of an annular or a circular shape obtained by rotating each modified refractive index region with the corresponding lattice point is 0.01 or less.

An optoelectronic semiconductor component (10) includes a semiconductor stack (109) in which a surface-emitting laser diode (103) and a photodetector (105) are placed vertically on top of one another. The optoelectronic semiconductor component (10) additionally includes an electric power source (149) that is adapted to modify a current intensity applied to the surface-emitting laser diode (103), thus allowing an emission wavelength to be modified.

In some implementations, an emitter module may include an emitter layer including a first emitter array configured to produce a first beam that provides flood illumination, and a second emitter array configured to produce a second beam that provides spot illumination. The emitter module may include a first optics layer, positioned in front of the emitter layer, that includes a first collimating lens positioned in front of the first emitter array, and a second collimating lens positioned in front of the second emitter array. The emitter module may include a second optics layer, positioned in front of the first optics layer, that includes an optical diffuser positioned in front of the first collimating lens, and a beamsplitter grating positioned in front of the second collimating lens.

A vertical cavity surface emitting laser (VCSEL) device comprises an interior light generating region, an exterior light emitting surface, and a spatial modulation region monolithically integrated with the interior light generating region so that the spatial modulation region is located between the interior light generating region and the exterior light emitting surface. The spatial modulation region is configured to shape the light generated by the interior light generating region before the generated light is emitted from the exterior light emitting surface. The VCSEL device may be configured to emit a beam of light along a predetermined direction, to emit a beam of light having a predetermined beam divergence, and/or to emit a beam of light having a predetermined shape or structure transverse to a direction of propagation so that the beam of light forms a predetermined spot or pattern of light when projected onto a surface. A plurality of VCSEL devices and a method for use in manufacturing a VCSEL device are also disclosed.