A VCSEL may include a bottom DBR mirror and a top DBR mirror above the bottom DBR mirror. The VCSEL may include a vertical optical cavity located within a portion of the bottom and top DBR mirrors. The vertical optical cavity may be configured to emit an optical signal. The VCSEL may include a lateral feedback optical cavity located within a different portion of the bottom and the top DBR mirrors configured to receive a feedback bias signal configured to bias the lateral feedback optical cavity to adjust the optical signal. The VCSEL may include an active region formed between the bottom and the top DBR mirrors that may include an oxide layer defining an oxide aperture. The VCSEL may include an isolation implant configured to electrically isolate the vertical optical cavity from the feedback optical cavity and to create a first and a second aperture within the oxide aperture.

An optocoupler is provided, including at least one light source and at least one matrix of photovoltaic cells facing the at least one light source, the at least one light source being configured to receive, at an input, an input electrical signal, and to generate, at an output, according to the input electrical signal, a light signal, sent to the at least one matrix of photovoltaic cells, the at least one matrix of photovoltaic cells being configured to receive, at the input, at least partially the light signal and to deliver, at the output, at least one output electrical signal, at the level of at least two connection pads, and the at least one light source being a matrix of laser diodes.

A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, a first semiconductor layer, and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer sandwich the active layer in between. The light-emitting device further includes a current confining layer, a concave-shaped first reflecting mirror provided on side of the first semiconductor layer, and a second reflecting mirror provided on side of the second semiconductor layer. The current confining layer has an opening. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening in between. The light-emitting device further includes a first reflecting layer and a phosphor layer. The first reflecting layer is disposed at a position opposed to the first reflecting mirror with a predetermined gap in between. The phosphor layer is disposed between the first reflecting mirror and the first reflecting layer, and performs wavelength conversion on light leaking from the first reflecting mirror.

A wavelength-tunable light source includes a wavelength-tunable laser including a first region and a second region each of which includes at least one of heaters, a frequency locker configured to receive output light of the wavelength-tunable laser and output two electric control signals whose phases are mutually different by 90 and having frequency period with respect to frequency of the output light, a thermal electric cooler on which the wavelength-tunable laser and the frequency locker are mounted, and a controller configured to control temperature of the heaters, and the thermal electric cooler on the basis of any one of the two electric control signals.

An apparatus for emitting pulsed electromagnetic laser radiation includes a laser gain element; an optical arrangement defining a laser resonator and arranged to re-direct radiation emitted by the gain element along a beam path back onto the gain element, the optical arrangement comprising an output coupler configured to couple a portion of the radiation in the laser resonator out of the laser resonator; and, a pump arrangement configured to pump the laser gain element. The optical arrangement includes a mode locker placed in the laser resonator in the beam path, and a birefringent element placed in the laser resonator in the beam path.

One embodiment may provide a light source module including: a light source part including at least one vertical cavity surface-emitting laser, which is configured to transfer light through N (N being a natural number equal to or greater than 1) apertures; at least one collimator lens through which light emitted from the light source part passes; and a driving device configured to make the collimator lens move, wherein the at least one vertical cavity surface-emitting laser comprises divided regions, and an intensity of a beam is controlled according to a predetermined far-distance mode or near-distance mode.

A tunable laser device is provided. The tunable laser device includes an active layer configured to generate first light by a first source; first and second reflective layers spaced apart from each other having the active layer disposed between the first reflective layer and the second reflective layer to form a resonance cavity; and a variable refractive index unit in the resonance cavity and having a refractive index being variable according to a second source, the second source being different from the first source.

A method for producing a semiconductor component for emitting light includes providing a base body, the base body comprising an active layer for generating the light and a tunnel contact, and forming a stop structure by implantation in a region of the tunnel contact. The stop structure delimits the tunnel contact and serves to constrict a current introduced into the active layer. Defects due to crystal imperfections are generated by the implantation so that the implanted region is transparent for the light having an emitted wavelength.

A method and system for large scale Vertical-Cavity Surface-Emitting Laser (VCSEL) binning from wafers to be compatible with a Clock-Data Recovery Unit (CDRU) and/or a VCSEL driver are provided. An illustrative method of binning is provided that includes: for at least a portion of VCSELs on a wafer, measuring a set of representative parameters of the VCSELs, of predetermined DC or small-signal values, and sorting the measured VCSELs into clusters according to the measured set of representative parameters of the VCSELs; further sorting the clusters into sub-groups that comply with specifications of the VCSEL driver; and providing a feedback signal to the CDRU for equalizing control signals provided to the VCSEL driver.

The invention discloses a semiconductor optoelectronic micro-device comprising at least one cavity and at least one multilayer interference reflector. The device represents a micrometer-scale pillar with an arbitrary shape of the cross section. The device includes a vertical optical cavity, a gain medium and means of injection of nonequilibrium carriers into the gain medium, most preferably, via current injection in a p-n-junction geometry. To allow high electric-to-optic power conversion at least one contact is placed on the sidewalls of the micropillar overlapping with at least one doped section of the device. Means for the current path towards the contacts and for the heat dissipation from the gain medium are provided. Arrays of micro-devices can be fabricated on single wafer or mounted on single carrier. Devices with different cross-section of the micropillar emit light at different wavelengths.