A light emitting device according to an embodiment of the present disclosure includes: a semi-insulating substrate; a semiconductor layer; a semiconductor stacked body; a buried layer; and a non-continuous lattice plane. The semi-insulating substrate has a first surface and a second surface that are opposed to each other. The semiconductor layer is stacked on the first surface of the semi-insulating substrate. The semiconductor layer has electrical conductivity. The semiconductor stacked body is stacked above the first surface of the semi-insulating substrate with the semiconductor layer interposed in between. The semiconductor stacked body has a light emitting region and includes a ridge section on the semi-insulating substrate side. The light emitting region is configured to emit laser light. The buried layer is provided around the ridge section of the semiconductor stacked body. The non-continuous lattice plane is provided between the semi-insulating substrate and the semiconductor stacked body.

A vertical-cavity surface-emitting laser (VCSEL) may include a substrate. The VCSEL may include a bottom mirror structure over the substrate. The VCSEL may include a first dilute nitride active region over the bottom mirror structure. The VCSEL may include a tunnel junction over the first dilute nitride active region. The VCSEL may include a second dilute nitride active region over the tunnel junction. The VCSEL may include a top mirror structure over the second dilute nitride active region.

A multilayer interconnect is described which enables electrically connecting a complex distribution of VCSEL or other light emitter elements in a large high density addressable array. The arrays can include many groups of VCSEL elements interspersed among each other to form a structured array. Each group can be connected to a contact pad so that each group of light emitter elements can be activated separately.

The invention relates to a semiconductor laser apparatus having a layer stack which comprises a first resonator mirror, a second resonator mirror and an active zone which is arranged between the first and second resonator mirrors and which is suitable for emitting electromagnetic radiation. A charge carrier barrier is arranged around a central region of the active zone.

A vertical cavity light-emitting element includes a substrate, a first multilayer film reflecting mirror, a semiconductor structure layer, an electrode, an electrode layer, and a second multilayer film reflecting mirror. The first multilayer film reflecting mirror is formed on the substrate. The semiconductor structure layer includes a nitride semiconductor. The nitride semiconductor includes a first semiconductor layer that is formed on the first multilayer film reflecting mirror and is a first conductivity type, a second semiconductor layer that is formed on the first semiconductor layer and is the first conductivity type, a light-emitting layer that is formed on the second semiconductor layer and is configured to expose a region including an outer edge of a top surface of the second semiconductor layer, and a third semiconductor layer that is formed on the light-emitting layer and is a second conductivity type opposite to the first conductivity type. The electrode is formed on the top surface of the second semiconductor layer. The electrode layer is electrically in contact with the third semiconductor layer in one region of a top surface of the third semiconductor layer. The second multilayer film reflecting mirror constitutes a resonator with the first multilayer film reflecting mirror. The second semiconductor layer has a larger resistance than the first semiconductor layer.

A LIDAR transmitter system comprising an array of laser energy sources, each laser energy source comprising a corresponding photodetector. The laser energy sources are configured to emit laser energy towards a LIDAR target. Each respective photodetector is configured to detect the laser energy emitted by a corresponding energy source of the array.

A solid-state LIDAR system includes a plurality of lasers, each generating an optical beam having a FOV when energized. A plurality of detectors is positioned in an optical path of the optical beams generated by the plurality of lasers. A FOV of at least one of the plurality of optical beams generated by the plurality of lasers overlaps a FOV of at least two of the plurality of detectors. A controller is configured to generate bias signals at a plurality of laser control outputs that energize a selected group of the plurality of lasers in a predetermined time sequence and is configured to detect a predetermined sequence of detector signals generated by the plurality of detectors.

Methods for forming an at least partially oxidized confinement layer of a semiconductor device and corresponding semiconductor devices are provided. The method comprises forming two or more layers of a semiconductor device on a substrate. The layers include an exposed layer and a to-be-oxidized layer. The to-be-oxidized layer is disposed between the substrate and the exposed layer. The method further comprises etching, using a masking process, a pattern of holes that extend through the exposed layer at least to a first surface of the to-be-oxidized layer. Each hole of the pattern of holes extends in a direction that is transverse to a level plane that is parallel to the first surface of the to-be-oxidized layer. The method further comprises oxidizing the to-be-oxidized layer through the pattern of holes by exposing the two or more layers of the semiconductor device to an oxidizing gas to form a confinement layer.

A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

Coupled-cavity vertical cavity surface emitting lasers (VCSELs) are provided by the present disclosure. The coupled-cavity VCSEL can comprise a VCSEL having a first mirror, a gain medium disposed above the first mirror, and a second mirror disposed above the gain medium, wherein a first cavity is formed by the first mirror and the second mirror. A second cavity is optically coupled to the VCSEL and configured to reflect light emitted from the VCSEL back into the first cavity of the VCSEL. In some embodiments, the second cavity can be an external cavity optically coupled to the VCSEL through a coupling component. In some embodiments, the second cavity can be integrated with the VCSEL to form a monolithic coupled-cavity VCSEL. A feedback circuit can control operation of the coupled-cavity VCSEL so the output comprises a target high frequency signal.