An optoelectronic device includes a carrier substrate, with a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure and a confinement layer. An upper DBR stack is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes are coupled to apply an excitation current to the quantum well structure.

Provided is a vertical cavity surface emitting laser diode (VCSEL) with low compressive strain DBR layer, including a GaAs substrate, a lower DBR layer, a lower spacer layer, an active region, an upper spacer layer and an upper DBR layer. The lower or the upper DBR layer includes multiple low refractive index layers and multiple high refractive index layers. The lower DBR layer, the lower spacer layer, the upper spacer layer or the upper DBR layer contains Al.sub.xGa.sub.1-xAs.sub.1-yP.sub.y, where the lattice constant of Al.sub.xGa.sub.1-xAs.sub.1-yP.sub.y is greater than that of the GaAs substrate. This can moderately reduce excessive compressive strain due to lattice mismatch or avoid tensile strain during the epitaxial growth, thereby reducing the chance of deformation and bowing of the VCSEL epitaxial wafer or cracking during manufacturing. Additionally, the VCSEL epitaxial layer can be prevented from generating excessive compressive strain or tensile strain during the epitaxial growth.

A VCSEL includes an active region between a top distributed Bragg reflector (DBR) and a bottom DBR each having alternating GaAs and AlGaAs layers. The active region includes quantum wells (QW) confined between top and bottom GaAs-containing current-spreading layers (CSL), an aperture layer having an optical aperture and a tunnel junction layer above the QW. A GaAs intermediate layer configured to have an open top air gap is disposed over a boundary layer of the active region and the top DBR. The air gap is made wider than the optical aperture and has a height equal to one quarter of VCSEL's emission wavelength in air. The top DBR is attached to the intermediate layer by applying wafer bonding techniques. VCSEL output, the air gap, and the optical aperture are aligned on the same optical axis. The bottom DBR is epitaxially grown on a silicon or a GaAs substrate.

A surface-emitting semiconductor laser includes a substrate, a first electrode in contact with the substrate, a first light reflection layer over the substrate, a second light reflection layer over the substrate, with the first light reflection layer between the second light reflection layer and the substrate, an active layer between the second light reflection layer and the first light reflection layer, a current confining layer between the active layer and the second light reflection layer and includes a current injection region, a second electrode over the substrate, with the second light reflection layer between the second electrode and the substrate, at least a portion of the second electrode is at a position overlapping the current injection region, and a contact layer between the second electrode and the second light reflection layer and includes a contact region in contact with the second electrode.

A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.

Surface-emitting laser devices and light-emitting devices including the same are provided. A surface-emitting laser device can include: a first reflective layer and a second reflective layer; and an active region disposed between the first reflective layer and the second reflective layer, wherein the first reflective layer includes a first group first reflective layer and a second group first reflective layer, and the second reflective layer includes a first group second reflective layer and a second group second reflective layer.

[Object] To provide a vertical cavity surface emitting laser element that has excellent producibility and is suitable for high output and a method of producing the vertical cavity surface emitting laser element.

[Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: a first DBR; a second BR; an active layer; and a tunnel junction layer. The first DBR reflects light of a specific wavelength. The second DBR reflects light of the wavelength. The active layer is disposed between the first DBR and the second DBR. The tunnel junction layer is disposed between the first DBR and the active layer and forms a tunnel junction. Respective layers between the first DBR and the second DBR have an inner peripheral region that is on an inner peripheral side as viewed from a direction perpendicular to a layer surface, and an outer peripheral region surrounding the inner peripheral region, ions being implanted into the outer peripheral region of the tunnel junction layer, the outer peripheral region having a lower carrier concentration and a larger electric resistance than the inner peripheral region of the tunnel junction layer.

Resonant optical cavity light emitting devices are disclosed, where the device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength and is positioned at a separation distance from the reflector. The reflector may be a distributed Bragg reflector. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K.Math.λ/n. K is a constant ranging from 0.25 to 10, λ is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.

A light-emitting device includes: a first light source that oscillates in a single lateral mode; a second light source that oscillates in a multiple lateral mode, the second light source having a light output larger than a light output of the first light source and being configured to be driven independently from the first light source; and a light diffusion member that is provided on an emission path of the second light source.

A light-emitting device includes: a first light-emitting element array that includes plural first light-emitting elements arranged at a first interval; a second light-emitting element array that includes plural second light-emitting elements arranged at a second interval wider than the first interval, second light-emitting element array being configured to output a light output larger than a light output of the first light-emitting element array, and being configured to be driven independently from the first light-emitting element array; and a light diffusion member provided on an emission path of the second light-emitting element array.