A proximity sensor which uses very narrow divergent beams from Vertical Cavity Surface Emitting Laser (VCSEL) for the illumination source is disclosed. Narrow divergent beams in the range 0.5 to 10 degrees can be achieved to provide high proximity sensing accuracy in a small footprint assembly. One approach to reducing the beam divergence is to increase the length of the VCSEL resonant cavity using external third mirror. A second embodiment extends the length of the VCSEL cavity by modifying the DBR mirrors and the gain region. Optical microlenses can be coupled with the VCSEL to collimate the output beam and reduce the beam divergence. These can be separate optical elements or integrated with the VCEL by modifying the substrate output surface profile or an added a transparent layer. These methods of beam divergence reduction are incorporated into various embodiment configurations to produce a miniature proximity sensor suitable for cell phones and tablets.

A multi-junction VCSEL is formed by as a compact structure that reduces lateral current spreading by reducing the spacing between adjacent active regions in the stack of such regions used to from the multi-junction device. At least two of the active regions within the stack are located adjacent peaks of the intensity profile of the VCSEL, with an intervening tunnel junction positioned at a trough between the two peaks. The alignment of the active regions with the peaks maximizes the generated optical power, while the alignment of the tunnel junction with the trough minimizes optical loss. The close spacing on adjacent peaks forms a compact structure (which may even include a cavity having a sub-λ optical length) that lessens the total path traveled by carriers and therefore reduces lateral current spread.

A reflector for optical devices is disclosed. The reflector includes a distributed Bragg reflector and a metal reflector. The metal reflector is contained within one or more apertures defined by a material having good adliesion to a semiconductor material. A method for bonding the resulting structure to a heat spreader is also disclosed.

Disclosed is an optically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses a periodic gain active region with type I quantum wells comprised of InGaAsSb, and barrier/cladding regions which provide strong hole confinement and substantial pump absorption. A preferred embodiment includes at least one wafer bonded GaAs-based mirror. Several preferred embodiments also include means for wavelength tuning of mid-IR VCLs as disclosed, including a MEMS-tuning element. This document also includes systems for optical spectroscopy using the VCL as disclosed, including systems for detection concentrations of industrial and environmentally important gases.

Tunable VCSELs (TVCSELs) employing expanded material systems with expanded mechanical/optical design space for semiconductor DBR mirrors on GaAs substrates. One is the InGaAs/AlGaAsP material system. It adds indium In to decrease InGaAs H-layer bandgap for higher refractive index and higher DBR layer refractive index contrast. Adding phosphorus P gives independent control of bandgap and strain of AlGaAsP low refractive index L-layers. The tensile strain of AlGaAsP L-layer compensates compressive strain of InGaAs H-layer and lowers the cumulative strain of the multilayer DBR structure. Another option is the InGaAsN(Sb)/AlGaAsP material system, where both types of layers can be lattice matched to GaAs. It uses indium In and nitrogen N, and possibly antimony Sb, to get independent control of strain and bandgap, and thus refractive index, of dilute nitride InGaAsN(Sb) H-layers, with lower bandgap and higher refractive index than starting GaAs. Using expanded material system enables reliable DBR mirrors with higher reflectivity and spectral bandwidth and tunable VCSELs with wider tuning range.

A multi-junction VCSEL is formed by as a compact structure that reduces lateral current spreading by reducing the spacing between adjacent active regions in the stack of such regions used to from the multi-junction device. At least two of the active regions within the stack are located adjacent peaks of the intensity profile of the VCSEL, with an intervening tunnel junction positioned at a trough between the two peaks. The alignment of the active regions with the peaks maximizes the generated optical power, while the alignment of the tunnel junction with the trough minimizes optical loss. The close spacing on adjacent peaks forms a compact structure (which may even include a cavity having a sub-λ optical length) that lessens the total path traveled by carriers and therefore reduces lateral current spread.

A VCSEL includes a substrate, and an epitaxial VSCEL structure on the substrate. The epitaxial VSCEL structure includes a resonant cavity, including a gain region, disposed between a first reflector and a partially reflecting second reflector. At least one of the first or second reflectors includes a first sub-wavelength grating to provide spectral control for optical emission from the VCSEL. The first sub-wavelength grating can be operable to lock a wavelength of an optical beam for emission from the VCSEL substantially to a wavelength defined by the grating.

A vertical-cavity surface-emitting laser (VCSEL) is provided that includes a mesa structure disposed on a substrate. The mesa structure defines an emission axis of the VCSEL. The mesa structure includes a first reflector, a second reflector, and a cascaded active region structure disposed between the first reflector and the second reflector. The cascaded active region structure includes a plurality of cascaded active region layers disposed along the emission axis, where each of the cascade active region layers includes an active region having multi-quantum well and/or dots layers (MQLs), a tunnel junction aligned with the emission axis, and an oxide confinement layer. The oxide confinement layer is disposed between the tunnel junction and MQLs, and has an electrical current aperture defined therein. The mesa structure defines an optical window through which the VCSEL is configured to emit light.

A vertical cavity surface emitting laser (VCSEL) has a shortened overall laser cavity by combining the gain section with a distributed Bragg reflector (DBR). The overall cavity length can be contracted by placing gain structures inside the DBR. This generally applies to a number of semiconductor material systems and wavelength bands, but this scheme is very well suited to the AlGaAs/GaAs material system with strained InGaAs quantum wells as a gain medium, for example.

Embodiments of the present disclosure provide an optical resonant cavity and a display panel. The optical resonant cavity includes a light conversion layer, the optical resonant cavity is configured to emit light with a specific wavelength range, and the light conversion layer is arranged at at least one wave node of a center wavelength of the light with the specific wavelength range in the optical resonant cavity.