Methods for forming an at least partially oxidized confinement layer of a semiconductor device and corresponding semiconductor devices are provided. The method comprises forming two or more layers of a semiconductor device on a substrate. The layers include an exposed layer and a to-be-oxidized layer. The to-be-oxidized layer is disposed between the substrate and the exposed layer. The method further comprises etching, using a masking process, a pattern of holes that extend through the exposed layer at least to a first surface of the to-be-oxidized layer. Each hole of the pattern of holes extends in a direction that is transverse to a level plane that is parallel to the first surface of the to-be-oxidized layer. The method further comprises oxidizing the to-be-oxidized layer through the pattern of holes by exposing the two or more layers of the semiconductor device to an oxidizing gas to form a confinement layer.

A surface emitting laser includes a first reflective layer, an active layer provided on the first reflective layer, and a second reflective layer provided on the active layer. The first reflective layer, the active layer, and the second reflective layer form a mesa, and the mesa has an electrically insulating region and an electrically conductive region. The electrically insulating region is positioned at a center portion of the mesa in a surface direction, and the electrically conductive region includes the first reflective layer, the active layer, and the second reflective layer and is positioned outside the electrically insulating region in such a manner as to surround the electrically insulating region.

Exemplary embodiments of the present disclosure include chip-scale laser sources, such as semiconductor laser sources, that produce directional beams with low spatial coherence. The lasing modes are based on the axial orbit in a stable cavity and have good directionality. To reduce the spatial coherence of emission, the number of transverse lasing modes can be increased by fine-tuning the cavity geometry. Decoherence is reached in as little as several nanoseconds. Such rapid decoherence facilitates applications in ultrafast speckle-free full-field imaging.

A novel, monolithically integrated mid-IR optical phased array (OPA) structure which eliminates the wafer bonding process to achieve highly efficient surface emitting optical beam steering in two dimensions is disclosed. Since solar energy is about 15-20 times smaller than that at 1.55 um, mid-IR is more favorable for the atmospheric transmission due to lower solar radiance backgrounds. For the beam steering, thermo-optic phase shifting is used for azimuthal plane beam steering and laser wavelength tuning is used for elevation plane beam steering. The OPA structure disclosed comprises a wavelength- tunable a QCL, a 1×32 splitter, thermo-optic phase-shifters, and sub-wavelength grating emitters. The disclosed OPA provides a low-cost, low-loss, low-power consumption, robust, small footprint, apparatus that may be used with expendable UAV swarms. A LiDAR may be created by monolithically integrating a QCD with the apparatus. Other embodiments are described and claimed.

The present application relates to the technical field of semiconductor optoelectronics, in particular to a multi-active-region cascaded semiconductor laser. The multi-active-region cascaded semiconductor laser comprises: a plurality of cascaded active regions, wherein each cascaded active region comprises a plurality of active regions; and a tunnel junction, arranged on at least one side of the cascaded active region and electrically connected with the cascaded active region; wherein in the cascaded active region, at least one group of adjacent active regions are connected through a barrier layer. In this way, more active regions are added in the periodic gain structure, which improves the internal quantum efficiency of the device and also reduces the carrier density, thereby obtaining more gains. The barrier layer connection does not have the property of introducing a new pn junction, so the layer will not increase the turn-on voltage for device operation, and meanwhile the epitaxial growth is much simpler than that of the tunnel junction.

An optoelectronic device includes a base chip, including a silicon die having a photodiode disposed at its front surface and a first anode contact and a first cathode contact disposed on the front surface. A laser diode driver circuit on the silicon die supplies an electrical drive signal between the first anode contact and the first cathode contact. An emitter chip includes a III-V semiconductor die, which is mounted with its front side facing toward the front surface of the silicon die. A second anode contact and a second cathode contact are disposed on the front side of the III-V semiconductor die in electrical communication with the first anode contact and the first cathode contact. A VCSEL is disposed on the front side of the III-V semiconductor die in coaxial alignment with the photodiode and receives the drive signal from the second anode contact and the second cathode contact.

Disclosed herein are electronic devices having touch input surfaces. A user's touch input or press on the touch input surface is detected using a set of lasers, such as vertical-cavity surface-emitting lasers (VCSELs) that emit beams of light toward the touch input surface. The user's touch causes changes in the self-mixing interference within the VCSEL of the emitted light with reflected light, such as from the touch input surface. Deflection and movement (e.g., drag motion) of the user's touch is determined from detected changes in the VCSELs' operation due to the self-mixing interference.

A method for producing micro-optics on surface-emitting laser diodes. In a wafer-level operation, the micro-optics are preferably positioned directly on the VCSEL's forming, in each instance, a part of a coherent wafer.

A vertical cavity surface emitting laser includes a gain layer configured to generate light; a distributed Bragg reflector below the gains layer; and a meta structure reflector above the gain layer and comprising a plurality of nano structures having a sub wavelength dimension.

Provided is a vertical-cavity surface-emitting semiconductor laser diode, including a substrate and an epitaxial stack structure disposed on the substrate. The epitaxial stack structure includes an active region, a current confinement layer and a mode filter layer. The mode filter layer includes an optical aperture, and the mode filter layer is able to be oxidized. Accordingly, the optical aperture of the mode filter layer is formed by oxidizing the mode filter layer.