A vertical cavity surface emitting laser includes a semi-insulating substrate having a major surface including a first area and a second area, an n-type semiconductor layer that is provided on the first area and unprovided on the second area, a semiconductor laminate that is provided on the n-type semiconductor layer, a cathode electrode that is connected to the n-type semiconductor layer, an anode electrode that is connected to a top surface of the semiconductor laminate, and a first conductor that is connected to the anode electrode and extends from the first area to the second area. The semiconductor laminate includes a first distributed Bragg reflector provided on the n-type semiconductor layer, an active layer provided on the first distributed Bragg reflector, and a second distributed Bragg reflector provided on the active layer. The first conductor includes an anode electrode pad provided on the second area.

A surface light-emission type semiconductor light-emitting device includes a first semiconductor layer; a light-emitting layer provided on the first semiconductor layer; a second semiconductor layer provided on the light-emitting layer; an uneven structure provided on the second semiconductor layer, the uneven structure including a protrusion and a recess next to the protrusion; a first metal layer covering the uneven structure; and a second metal layer provided between the uneven structure and the first metal layer. The second metal layer is provided on one of a bottom surface of the recess, an upper surface of the protrusion, or a side surface of the protrusion. The second metal layer has a reflectance for light radiated from the light-emitting layer, which is less than a reflectance of the first metal layer for the light.

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

A light source based on an optical frequency mixer is disclosed. The light source has a first laser for emitting light at a first optical frequency, and a plurality of second lasers for emitting light at different second optical frequencies. The optical frequency mixer provides output light beams at mixed optical frequencies of the first and second lasers. Wavelength of output light beams may be tuned by tuning wavelength of any of the first or second lasers. In this manner, RGB wavelength-tunable light sources may be constructed based on red or near-infrared lasers. The wavelength tunability of the output light beams may be used to angularly scan or refocus the light beams.

In one aspect, an optical system for delivering light into an optical fiber is disclosed, which comprises a phosphor-converted white light source for generating white light, a red light emitting diode (LED) for generating red light, and a light-delivery system for delivering at least a portion of said white light and said red light into an input port of an optical fiber.

In one aspect, an optical system for delivering light into an optical fiber is disclosed, which comprises a phosphor-converted white light source for generating white light, a red light emitting diode (LED) for generating red light, and a light-delivery system for delivering at least a portion of said white light and said red light into an input port of an optical fiber.

A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

A vertical cavity surface emitting laser (VCSEL) may include an epitaxial structure that includes a first active layer, a second active layer, and a tunnel junction therebetween. The VCSEL may include a set of contacts that are electrically connected to the epitaxial structure. The set of contacts may include three or more contacts, and the set of contacts may be electrically separated from each other on the VCSEL. At least one contact, of the set of contacts, may be electrically connected to the epitaxial structure at a depth between the first active layer and the second active layer.

A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.

In one aspect, an optical system for delivering light into an optical fiber is disclosed, which comprises a phosphor-converted white light source for generating white light, a red light emitting diode (LED) for generating red light, and a light-delivery system for delivering at least a portion of said white light and said red light into an input port of an optical fiber.