An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.

A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

A laser diode includes a semiconductor structure having an n-type layer, an active region, and a p-type layer. One of the n-type and p-type layers includes a lasing aperture thereon having an optical axis oriented perpendicular to a surface of the active region between the n-type and p-type layers. First and second contacts are electrically connected to the n-type and p-type layers, respectively. The first and/or second contacts are smaller than the lasing aperture in at least one dimension. Related arrays and methods of fabrication are also discussed.

A light source based on an optical frequency mixer is disclosed. The light source has a first laser for emitting light at a first optical frequency, and a plurality of second lasers for emitting light at different second optical frequencies. The optical frequency mixer provides output light beams at mixed optical frequencies of the first and second lasers. Wavelength of output light beams may be tuned by tuning wavelength of any of the first or second lasers. In this manner, RGB wavelength-tunable light sources may be constructed based on red or near-infrared lasers. The wavelength tunability of the output light beams may be used to angularly scan or refocus the light beams.

A printing system is disclosed which comprises a writing module, and a member having an imaging surface configured to carry a polymer and movable relative to the writing module. The writing module is configured to direct onto the imaging surface a plurality of individually controllable light beams that are spaced from one another in a direction transverse to the direction of movement of the imaging surface, incidence of a light beam on a spot on the imaging surface serving to soften or liquefy the polymer carried by the imaging surface at the spot. The polymer softened or liquefied at the spot can transfer to a substrate or serve as an adhesive on the imaging surface. The writing module comprises a plurality of integrated electronic modules each having an array of individually controllable light sources, each light source producing a respective one of the light beams. In the invention, each light source comprises at least two Vertical-Cavity Surface-Emitting Laser (VCSEL) light-emitting semiconductor junctions connected in series with one another and configured to direct light onto the imaging surface at the same spot as one another.

In one aspect, an optical system for delivering light into an optical fiber is disclosed, which comprises a phosphor-converted white light source for generating white light, a red light emitting diode (LED) for generating red light, and a light-delivery system for delivering at least a portion of said white light and said red light into an input port of an optical fiber.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a first set of epitaxial layers for a bottom-emitting VCSEL disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers for a top-emitting VCSEL disposed on the first set of epitaxial layers for the bottom-emitting VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The top-emitting VCSEL and the bottom-emitting VCSEL may be configured to emit light in opposite light emission directions.

Methods, devices and systems are described for enabling a series-connected, single chip vertical-cavity surface-emitting laser (VCSEL) array. In one aspect, the single chip includes one or more non-conductive regions one the conductive layer to produce a plurality of electrically separate conductive regions. Each electrically separate region may have a plurality of VCSEL elements, including an anode region and a cathode region connected in series. The chip is connected to a sub-mount with a metallization pattern, which connects each electrically separate region on the conductive layer in series. In one aspect, the metallization pattern connects the anode region of a first electrically separate region to the cathode region of a second electrically separate region. The metallization pattern may also comprise cuts that maintain electrical separation between the anode and cathode regions on each conductive layer region, and that align with the etched regions.

System and method for increasing VCSEL power by using multiple gain layers 10, separated by insulated layers 12, bounded on top and bottom by DBR mirrors 11, connected in parallel through electrodes embedded within, resulting in a modified VCSEL system of higher power, lower resistive loss, higher device speed, and higher beam quality.

An embodiment discloses a vertical cavity surface emitting laser and a method for manufacturing the same, the vertical cavity surface emitting laser comprising: a substrate; a lower reflective layer disposed on the substrate; an active layer disposed on the lower reflective layer; an oxide layer disposed on the active layer and comprising a first hole disposed at the center thereof; a capping layer disposed on the oxide layer; and an upper reflective layer disposed on the capping layer and the first hole.