The present disclosure relates to a glass having a refractive index of at least 1.7 as well as the use of the glass as a cladding glass of a solid-state laser. The disclosure also relates to a laser component comprising a core of doped sapphire and a cladding glass being placed on said core. The cladding glass is arranged on said core such that light exiting from the core due to parasitic laser activity can enter the cladding glass and can be absorbed there. Thus, a laser component with improved efficiency is obtained. The present disclosure also relates to a method for producing the laser component.

A photonic crystal device includes a two-dimensional crystal including a gain medium and having a first photonic crystal resonator and a second photonic crystal resonator spaced apart from each other and a graphene layer disposed to cover a portion of the first photonic crystal resonator and not to cover the second photonic crystal resonator.

A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.

A device includes a first cladding layer, a waveguide laser, an absorption layer, and a second cladding layer. The absorption layer is constituted by an oversaturation absorption body such as graphene. Also, the absorption layer is provided between the active layer and the distributed Bragg reflection portion. The absorption layer is formed below a core forming an optical waveguide between the active layer and a distributed Bragg reflection portion.

An edge-emitting semiconductor laser includes: a semiconductor substrate; a first cladding layer having a first refractive index and formed on the semiconductor substrate; an active layer formed on the first cladding layer and having a second refractive index higher than the first refractive index; a Bragg reflector formed on the active layer and in which low-refractive-index layers and high-refractive-index layers each having a thickness larger than /4n are alternately laid one on another where is an lasing wavelength and n is a refractive index of a medium; a light absorption layer formed on the Bragg reflector and having bandgap energy lower than that of the active layer; and a second cladding layer formed on the light absorption layer and having a third refractive index lower than the second refractive index.

A light-emitting component includes a light-emitting element, a thyristor, and a light-absorbing layer. The thyristor includes a semiconductor layer having a bandgap energy smaller than or equal to a bandgap energy equivalent to a wavelength of light emitted by the light-emitting element. The thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-absorbing layer is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked. The light-absorbing layer absorbs the light emitted by the light-emitting element.

A layered structure includes a thyristor and a light-emitting element. The thyristor at least includes four layers. The four layers are an anode layer, a first gate layer, a second gate layer, and a cathode layer arranged in this order. The light-emitting element is disposed such that the light-emitting element and the thyristor are connected in series. The thyristor includes a semiconductor layer having a bandgap energy smaller than bandgap energies of the four layers.

A light-emitting component includes a light-emitting element, a driving thyristor, and a light-absorbing layer. The light-emitting element emits light of a predetermined wavelength. The driving thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-absorbing layer is disposed between the light-emitting element and the driving thyristor such that the light-emitting element and the driving thyristor are stacked, and absorbs light emitted by the driving thyristor.

A light-emitting component includes a substrate, a light-emitting element, a thyristor, and a light-transmission reduction layer. The light-emitting element is disposed on the substrate. The thyristor causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state. The light-transmission reduction layer is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked, and suppresses light emitted by the thyristor from passing therethrough.

A laser diode vertical epitaxial structure, comprising a transverse waveguide comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer wherein the transverse waveguide is bounded by a lower index n-cladding layer on an n-side of the transverse waveguide and a lower index p-cladding layer on a p-side of the transverse waveguide, a lateral waveguide that is orthogonal to the transverse waveguide, wherein the lateral waveguide is bounded in a longitudinal direction at a first end by a facet coated with a high reflector (HR) coating and at a second end by a facet coated with a partial reflector (PR) coating and a higher order mode suppression layer (HOMSL) disposed adjacent to at least one lateral side of the lateral waveguide and that extends in a longitudinal direction.