A two-dimensional photonic-crystal laser formed by sandwiching, between a first electrode and a second electrode, a layered body including an active layer and a two-dimensional photonic-crystal layer in which modified refractive index areas having a refractive index different from a refractive index of a plate-shaped base body are periodically arranged two-dimensionally on the base body. The first electrode is divided into a plurality of partial electrodes, and the second electrode is a frame-shaped electrode including a frame-shaped portion made of a conductor, the second electrode having a window portion which is a space inside the frame-shaped portion being arranged to face a region enclosing a plurality of the partial electrodes. A lens provided on the side opposite to the layered body of the second electrode in a manner covering the entire window portion is included.

A semiconductor laser device is specified, the semiconductor laser device comprising an active layer having a main extension plane, a first cladding layer and a second cladding layer, the active layer being arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, a photonic crystal layer arranged in the first cladding layer or in the second cladding layer, and an integrated optical element directly fixed to the light-outcoupling surface. Furthermore, a method for manufacturing a semiconductor laser device and a projection device are specified.

The embodiment relates to a light-emitting device in which a positional relationship between a modified refractive index region's gravity-center position and the associated lattice point differs from a conventional device, and a production method. In this device, a stacked body including a light-emitting portion and a phase modulation layer optically coupled to the light-emitting portion is on a substrate. The phase modulation layer includes a base layer and plural modified refractive index regions in the base layer. Each modified refractive index region's gravity-center position locates on a virtual straight line passing through a corresponding reference lattice point among lattice points of a virtual square lattice on the base layer's design plane. A distance between the reference lattice point and the modified refractive index region's gravity center along the virtual straight line is individually set such that this device outputs light forming an optical image.

In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.

A layered structure comprising a substrate having a first deformation. Also one or more device layers forming a device and having a second deformation. A deformation control layer which is pseudomorphic with respect to the substrate and having a third deformation. The deformation control layer is selected such that a sum of the first, second and third deformations matches a target level of deformation. Advantageously the layered structure has a controlled, known deformation which can be compressive, tensile or zero.

In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.

An edge-emitting semiconductor laser includes: a semiconductor substrate; a first cladding layer having a first refractive index and formed on the semiconductor substrate; an active layer formed on the first cladding layer and having a second refractive index higher than the first refractive index; a Bragg reflector formed on the active layer and in which low-refractive-index layers and high-refractive-index layers each having a thickness larger than λ/4n are alternately laid one on another where λ is an lasing wavelength and n is a refractive index of a medium; a light absorption layer formed on the Bragg reflector and having bandgap energy lower than that of the active layer; and a second cladding layer formed on the light absorption layer and having a third refractive index lower than the second refractive index.

Integrated circuitry is fabricated from semiconductor layers formed on a substrate, which include at least one n-type layer, an inverted p-type modulation doped quantum well (mod-doped QW) structure, a non-inverted n-type mod-doped QW structure, and at least one p-type layer including a first P+-type layer formed below a second P-type layer. An etch operation exposes the second p-type layer. P-type ions are implanted into the exposed second p-type layer. A gate electrode of a n-channel HFET device is formed in contact with the p-type ion implanted region. Source and drain electrodes of the n-channel HFET device are formed in contact with n-type ion implanted regions formed in contact with the n-type mod-doped QW structure. P-channel HFET devices, complementary BICFET devices, stacked complementary HFET devices and circuits and/or logic gates based thereon, and a variety of optoelectronic devices and optical devices can also be formed as part of the integrated circuitry.

A photonic circuit with a hybrid III-V on silicon or silicon-germanium active section, that comprises an amplifying medium with a III-V heterostructure (1, QW, 2) and an optical wave guide. The wave guide comprises a coupling section (31) facing a central portion of the amplifying medium, a propagation section (34, 35) and a modal transition section (32, 33) arranged between the coupling section and the propagation section. In the modal transition section, the optical wave guide widens progressively from the propagation section towards the coupling section.

A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes which are two-dimensionally periodically arranged within the guide layer; (d) etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; (e) supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer on the first embedding layer, The step (d) includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.