An optoelectronic component comprising a laser diode is disclosed. In an embodiment an optoelectronic component includes a carrier, a laser diode arranged on the carrier, wherein the laser diode is configured to emit electromagnetic radiation in a lateral radiation and a radiation-guiding layer arrangement located in front of the lateral face of the laser diode, wherein the layer arrangement includes at least a first layer and a second layer, wherein the first layer is arranged on the carrier, wherein the second layer is arranged on the first layer, wherein the first layer and the second layer abut each other, wherein the second layer is transparent for the electromagnetic radiation, wherein the first layer has a smaller refractive index than the second layer, and wherein the layer arrangement is arranged such that the electromagnetic radiation of the laser diode is coupled into the second layer, guided in the second layer to a radiation surface of the second layer, and emitted via the radiation surface of the second layer.

A high-power semiconductor chip and a preparation method therefor. The semiconductor chip comprises: a substrate (1), a lower confinement layer (2), a lower waveguide layer (3), an active layer (4), an upper waveguide layer (5), a lateral grating layer (10), an upper confinement layer (6), a contact layer (7), a current isolation dielectric layer (8) and a metal layer (9), sequentially arranged from bottom to top, wherein the lateral grating layer (10) comprises a plurality of groups of lateral gratings; the plurality of groups of lateral gratings are sequentially arranged in a first direction; the periods of the plurality of groups of lateral gratings are different from each other; each group of lateral gratings comprises a plurality of gratings; the plurality of gratings are arranged in a second direction; and the first direction intersects with the second direction. Providing a lateral grating layer (10) in a waveguide improves the propagation loss of the high-order lateral light mode in the waveguide, and achieves the aim of suppressing the lasing of the high-order lateral light mode; and providing a plurality of groups of gratings with different periods suppresses the lasing of an intensity oscillation light mode caused by single grating gain modulation and refractive index modulation, achieves the effect of suppressing lateral light intensity periodic oscillation and eliminates the formation of far-field double humps.

A semiconductor membrane laser chip includes a planar-shaped lasing medium having an upper surface and a lower surface opposite the upper surface, the lasing medium configured to emit electromagnetic radiation at a laser wavelength λ.sub.1. A first heat spreader is bonded to one of the upper surface and the lower surface of the lasing medium. A first dielectric layer is arranged on the lower surface of the lasing medium or arranged on a lower surface of the first heat spreader when the first heat spreader is bonded to the lower surface of the lasing medium. The first dielectric layer is reflective for the laser wavelength λ.sub.1.

A photonic-crystal surface-emitting laser element includes: a first semiconductor layer formed by embedding a photonic crystal layer that includes air holes arranged with two-dimensional periodicity in a formation region in a plane parallel to the photonic crystal layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a mesa portion with a mesa shape formed at a surface of the second semiconductor layer, wherein the mesa portion is located inside the formation region of the air holes when viewed in a direction perpendicular to the photonic crystal layer.

The present invention provides a laser comprising a laser cavity defined by a first reflector and a second reflector. The laser cavity comprising a gain region and an intracavity modulation stage for reducing coherence of the laser output. The intracavity modulation stage comprises a region configured to support a plurality of optical modes. The second reflector is a broadband reflector having a reflectance spectrum configured to support the plurality of optical modes.

An electrically pumped photonic-crystal surface-emitting laser, the epitaxy structure has a first mesa, the first mesa has multiple air holes and forming a photonic crystal structure, the epitaxy structure further has a second mesa, the second mesa and photonic crystal structure is facing the same direction; a first metal electrode arranged on the insulating layer, and covering the photonic crystal structure; a second metal electrode arranged on the second mesa and protruding out of the groove, making the first metal electrode and the second metal electrode face the same direction; and further make the first metal electrode connect to the first connecting metal and make the second metal electrode connect to the second connecting metal for making the photonic crystal structure become flip chip.

A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: growing a first cladding layer with a {0001} growth plane; growing a guide layer on the first cladding layer; forming holes which are two-dimensionally periodically arranged within the guide layer; etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and growing an active layer and a second cladding layer on the first embedding layer, The step includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.

A photonic crystal surface-emitting laser includes a light emitting module and a driving module. The light emitting module includes a photonic crystal layer, an active light emitting layer on a side of the photonic crystal layer, a first electrode on a side of the active light emitting layer facing away from the photonic crystal layer, and a second electrode partially on the side of the active light emitting layer facing away from the photonic crystal layer. The driving module makes electrical contact with surfaces of the first electrode and the second electrode facing away from the photonic crystal layer. The driving module outputs driving signals to the first electrode and the second electrode to drive the active light emitting layer to generate photons. The photons are incident into the photonic crystal layer to generate a laser light through oscillation on Bragg diffraction. An optical system is also disclosed.

In some embodiments, a semiconductor structure includes: a first region comprising a first epitaxial oxide material; a second region comprising a second epitaxial oxide material; and a chirp layer located between the first and the second regions. The chirp layer can include alternating layers of a plurality of wide bandgap epitaxial oxide material layers (WBG layers) and a plurality of narrow bandgap epitaxial oxide material layers (NBG layers), wherein thicknesses of the NBG layers and the WBG layers change throughout the chirp layer. The WBG layer can comprise (Al.sub.x1Ga.sub.1−x1).sub.y1O.sub.z1, wherein x1 is from 0 to 1, wherein y1 is from 1 to 3, and wherein z1 is from 2 to 4. The NBG layer can comprise (Al.sub.x2Ga.sub.1x−2).sub.y2O.sub.z2, wherein x2 is from 0 to 1, wherein y2 is from 1 to 3, and wherein z2 is from 2 to 4, and wherein x1 and x2 are different from one another.

In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.