[Object] To provide a semiconductor laser element capable of preventing current leakage in junction-down mounting and a method of producing the semiconductor laser element.

[Solving Means] A semiconductor laser element according to the present technology includes: a stacked body. The stacked body includes a substrate, an n-type semiconductor layer that is formed on the substrate, is formed of an n-type semiconductor material, and has a core that is a defect concentration region, an active layer that is formed on the n-type semiconductor layer, and a p-type semiconductor layer that is formed on the active layer and is formed of a p-type semiconductor material, and has a recessed portion formed from a surface of the p-type semiconductor layer to have a depth reaching the core and an ion implantation region that is formed by implanting ions into a region including the core.

A semiconductor laser device having a diffraction grating is disclosed. The semiconductor laser device comprises a first diffraction grating provided on a substrate, a second diffraction grating continuous to one end of the first diffraction grating along an optical waveguide direction, and an active layer provided above the first diffraction grating. The second diffraction grating has a pitch 1.05 times or greater, or 0.95 times or smaller of the pitch of the first diffraction grating.

A light emitting component includes plural transfer elements, plural setting thyristors, and plural light emitting elements. The transfer elements are configured to be sequentially brought into an ON state. The setting thyristors are connected to the transfer elements, respectively. The setting thyristors are configured to be brought into a state where the setting thyristors are capable of changing to the ON state when the transfer elements are brought into the ON state. The light emitting elements are stacked on the setting thyristors through tunnel junctions, respectively. The light emitting elements are configured to emit light of increase a light emission amount when the setting thyristors are brought into the ON state.

A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment a semiconductor laser diode includes an epitaxially produced semiconductor layer sequence comprising at least one active layer and a gallium-containing passivation layer on at least one surface region of the semiconductor layer sequence.

A semiconductor optical device, in which a light emitting region and a modulator region are integrated, includes a first mesa disposed in the light emitting region, protruding in a direction that intersects a light propagation direction, and including an active layer, first and second buried layers disposed on the first mesa in a direction that intersects the light propagation direction and sequentially stacked in a direction in which the first mesa protrudes, a first semiconductor layer disposed on the first mesa and the second buried layer, a second mesa disposed in the modulator region and including a light absorption layer, and a third buried layer disposed on the second mesa. The first semiconductor layer and the first buried layer each have a first conductivity type. The second buried layer has a second conductivity type different from the first conductivity type, and the third buried layer is a semi-insulating semiconductor layer.

An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation and is arranged in a plane, wherein the layer structure includes a top side and four side faces, first and third side faces are arranged opposite one another, second and fourth side faces are arranged opposite one another, a strip-shaped ridge structure is arranged on the top side of the layer structure and extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, wherein a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, the second recess extends as far as the second side face, and at least one third recess is introduced into a base face of the first recess laterally alongside the ridge structure.

A semiconductor optical device in which a light emitting region that emits light and a reflecting region that reflects the light to the light emitting region side are integrated includes a core layer that is provided in the light emitting region, and a waveguide layer that is provided in the reflecting region, that is optically coupled to the core layer, and that has a band gap that is larger than energy of the light. The reflecting region has a first thyristor that overlaps the waveguide layer in a direction that intersects a propagation direction of the light.

A semiconductor laser includes an active region, a first distributed-Bragg-reflector region disposed contiguously with the active region, and a second distributed-Bragg-reflector region. The first distributed-Bragg-reflector region is formed contiguously with one side of the active region in a waveguide direction and includes a first diffraction grating. The second distributed-Bragg-reflector region is formed contiguously with to the other side of the active region in the waveguide direction and includes a second diffraction grating. The first diffraction grating includes recessed portions formed through a diffraction grating layer formed in the first distributed-Bragg-reflector region and convex portions adjacent to the recessed portions. The diffraction grating layer is made of a dielectric material.

A semiconductor optical element is configured to emit or absorb light and includes a lower structure that includes a multiple quantum well layer; an upper mesa structure that is disposed on the lower structure; a current injection structure that is disposed on the upper mesa structure, when seen from an optical axis of the emitted or absorbed light, a width of a portion of the current injection structure in contact with the upper mesa structure is smaller than a width of the upper mesa structure, the portion of the current injection structure in contact with the upper mesa structure consisting of InP, and an average refractive index of the upper mesa structure is higher than a refractive index of the InP forming the current injection structure; and an insulating film covering both side surfaces of the upper mesa structure and a part of an upper surface of the upper mesa structure.

An optoelectronic device, including: a laser source, including a semiconductor membrane, which rests on a first dielectric layer, and which is formed from a lateral segment doped n-type, a lateral segment doped p-type, and an optically active central segment located between and in contact with the doped lateral segments to form a lateral p-i-n junction lying parallel to the main plane. The semiconductor membrane is produced based on crystalline GaAs, the central segment includes GaAs-based quantum dots, and the doped lateral segments are produced based on AlxGa1-xAs with a proportion of aluminium x comprised between 0.05 and 0.30.