The invention relates to a semiconductor laser diode (1) comprising: a semiconductor layer sequence (2) having an active region (20) provided for generating radiation; a radiation decoupling surface (10) which extends perpendicular to a main extension plane of the active region; a main surface (11) which delimits the semiconductor layer sequence in the vertical direction; a contact layer (3) which adjoins the main surface; and a heat-dissipating layer (4), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.

A nitride semiconductor laser device at least includes a ridge part disposed on a second-conductivity-type semiconductor layer, a conductive oxide layer covering the upper surface of the ridge part and portions of opposite side surfaces of the ridge part, a dielectric layer covering a portion of the conductive oxide layer, and a first metal layer covering the conductive oxide layer and the dielectric layer, wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part is exposed through the dielectric layer and covered with the first metal layer.

A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment a semiconductor laser diode includes an epitaxially produced semiconductor layer sequence comprising at least one active layer and a gallium-containing passivation layer on at least one surface region of the semiconductor layer sequence.

A group III-nitride semiconductor device comprises a light emitting semiconductor structure comprising a p-type layer and an n-type layer operable as a light emitting diode or laser. On top of the p-type layer there is arranged an n+ or n++-type layer of a group III-nitride, which is transparent to the light emitted from the underlying semiconductor structure and of sufficiently high electrical conductivity to provide lateral spreading of injection current for the light-emitting semiconductor structure.

A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.

A hybrid optical assembly includes: a photonic device having a waveguide structure including group IV semiconductor and oxide; and an optical source device including group III-V semiconductor. The source device is bonded to the photonic device. The source device and the waveguide structure are arranged in a direction of a first axis. The source device has a first semiconductor mesa including an upper core layer and a first upper cladding layer and a second semiconductor mesa including a lower core layer and a second upper cladding layer. The first and second semiconductor mesas extend in a direction of a second axis intersecting the first axis. The second semiconductor mesa has a length larger than that of the first semiconductor mesa. The lower core layer, the second upper cladding layer, and the upper core layer and the first upper cladding layer are arranged in the direction of the first axis.

Structures for integrated lasers, systems including integrated lasers, and associated fabrication methods. A ring waveguide and a seed region are arranged interior of the ring waveguide. A laser strip extends across a portion of the ring waveguide. The laser strip has an end contacting the seed region and another opposing end. The laser strip includes a laser medium and a p-n junction capable of generating electromagnetic radiation. The p-n junction of the laser strip is aligned with a portion of the ring waveguide.

A semiconductor apparatus with improved heat removal and improved heat flow to a heat sink is provided. The semiconductor apparatus includes a p-type semiconductor. An n-p tunnel junction is positioned within an epitaxial structure of the p-type semiconductor. A metal contact layer is connected to the n-p tunnel junction through an alloyed n-type contact interface. The n-p tunnel junction improves heat flow from the semiconductor through an alloyed contact interface formed between the tunnel junction and the metal contact layer which has lower thermal and electrical resistance in comparison to a conventional metallurgically abrupt interface of a p-type contact.

A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.

An optoelectronic component includes an active zone that generates electromagnetic radiation, wherein the electromagnetic radiation is guided in a guide plane, the electromagnetic radiation is output essentially in the guide plane, the active zone emits stray radiation laterally with respect to the guide plane, an electrical contact pad is provided, the contact pad is arranged outside the guide plane, the contact pad is formed by a surface at least partially covered by a conductive layer, the surface has inclined partial faces, and the electrically conductive layer on at least a subset of the inclined faces of the contact pad is configured to be so thin that electromagnetic stray radiation is emitted via the subset of the inclined faces.