A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap,

[00001]$E_F-E_V<\frac{E_G}{2}$

applying to the layer (A) and

[00002]$E_L-E_F<\frac{E_G}{2}$

applying to the layer (B), with E.sub.F the energy position of the Fermi level, E.sub.V the energy position of the valence band, E.sub.L the energy position of a conduction band and E.sub.L−E.sub.V the energy difference of the semiconductor band gap E.sub.G, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.

A manufacturing method of a nitride-based semiconductor light-emitting element includes: forming an n-type nitride-based semiconductor layer; forming, on the n-type nitride-based semiconductor layer, a light emission layer including a nitride-based semiconductor; forming, on the light emission layer in an atmosphere containing a hydrogen gas, a p-type nitride-based semiconductor layer while doping the p-type nitride-based semiconductor layer with a p-type dopant at a concentration of at least 2.0×10.sup.18 atom/cm.sup.3; and annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an atmosphere not containing hydrogen. In this manufacturing method, a hydrogen concentration of the p-type nitride-based semiconductor layer after the annealing is at most 5.0×10.sup.18 atom/cm.sup.3 and at most 5% of the concentration of the p-type dopant, and a hydrogen concentration of the light emission layer is at most 2.0×10.sup.17 atom/cm.sup.3.

A vertical-cavity surface-emitting laser, comprising a substrate, wherein bottom n-type DBR mirror, first oxidation confinement layer, n-type guide spacer layer, active region layer, p-type guide spacer layer, second oxidation confinement layer, first spacer layer, third oxidation confinement layer second spacer layer, fourth oxidation confinement layer, third spacer layer, fifth oxidation confinement layer, fourth spacer layer, sixth oxidation confinement layer, fifth spacer layer, seventh oxidation confinement layer, sixth spacer layer, eighth oxidation confinement layer, top p-type DBR mirror, p-type contact layer and p-side electrode are successively stacked on the substrate; and a back surface of the substrate is provided with an n-side electrode.

A modulation doped semiconductor laser includes a multiple quantum well composed of a plurality of layers including a plurality of first layers and a plurality of second layers stacked alternately and including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the plurality of first layers including the acceptor so that a p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the acceptor so that the p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the donor, and an effective carrier concentration corresponding to a difference between the p-type carrier concentration and an n-type carrier concentration is 10% or less of the p-type carrier concentration of the plurality of second layers.

An object of the present invention is to provide a method for manufacturing an optical device having a laser diode, which method is suitable for mass production, and an optical device having a laser diode which allows accurate property evaluations thereof with small measurement errors. Specifically, the method includes: an etching process of etching a semiconductor lamination unit to form a mesa structure having a resonator end face, thereby forming a laser diode; and a reflecting layer forming process of forming a light reflecting layer such that the light reflecting layer covers entire side surfaces of the mesa structure, wherein the semiconductor lamination unit has a substate, a n-type clad layer including a nitride semiconductor layer having n-type conductivity, a light-emitting layer including at least one quantum well, and a p-type clad layer including a nitride semiconductor layer having p-type conductivity, laminated in this order.

A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes Al.sub.x1Ga.sub.1-x1N with 0x11 or Al.sub.x1In.sub.y1Ga.sub.1-x1-y1N with 0x11, 0y1<1 and x1+y11, the aluminum content x1 decreases in a direction pointing away from the active layer so that the aluminum content has a maximum value x1.sub.max and a minimum value x1.sub.min<x1.sub.max, and the second partial layer includes Al.sub.x2Ga.sub.1-x2N with 0x2x1.sub.min or Al.sub.x2In.sub.y2Ga.sub.1-x2-y2N with 0x2x1.sub.min, 0y2<1 and x2+y21.

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof. A beam shaper may be configured to direct the white light emission and an infrared emission for illuminating a target of interest and transmitting a data signal. In some configurations, sensors and feedback loops are included.

A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.

The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxide VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof.

A semiconductor light-emitting device includes a layer structure of a nitride semiconductor, and the layer structure includes an n-type semiconductor layer, a p-type semiconductor layer, and an intermediate layer. The intermediate layer includes an active layer and is provided between the n-type semiconductor layer and the p-type semiconductor layer. The layer structure includes a residual donor in a region at least included in the intermediate layer, the region being situated between the active layer and the p-type semiconductor layer. The intermediate layer includes impurities in the region between the active layer and the p-type semiconductor layer, the impurities compensating the residual donor. Further, the intermediate layer is configured such that a concentration of the impurities in the region between the active layer and the p-type semiconductor layer is higher than a concentration of the impurities in the p-type semiconductor layer.