A light emitting device includes a substrate, and a laminate provided to the substrate and including a plurality of columnar portions, where each of the columnar portions includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer includes a facet surface, a c surface, and an m surface, the light emitting layer includes a facet surface region provided to the facet surface, and a c surface region provided to the c surface, the light emitting layer does not include a region provided to the m surface, and the c surface region is larger than the facet surface region in a plan view as viewed from a laminating direction of the laminate.

A light-emitting device includes a substrate and a stack provided on the substrate. The stack includes a plurality of columnar portions each of which includes a first columnar portion and a second columnar portion which has a diameter smaller than a diameter of the first columnar portions. Each first columnar portion is provided between the substrate and the second columnar portions, and includes: a first semiconductor layer; a second semiconductor layer having a conductivity type different from a conductivity type of the first semiconductor layer; and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of generating light. The first semiconductor layer is provided between the substrate and the light-emitting layer. Each second columnar portion includes a third semiconductor layer having a conductivity type different from a conductivity type of the first semiconductor layer.

A group III-nitride semiconductor device comprises a light emitting semiconductor structure comprising a p-type layer and an n-type layer operable as a light emitting diode or laser. On top of the p-type layer there is arranged an n+ or n++-type layer of a group III-nitride, which is transparent to the light emitted from the underlying semiconductor structure and of sufficiently high electrical conductivity to provide lateral spreading of injection current for the light-emitting semiconductor structure.

The present invention is directed to wearable display technologies. More specifically, various embodiments of the present invention provide wearable augmented reality glasses incorporating projection display systems where one or more laser diodes are used as light source for illustrating images with optical delivery to the eye using transparent waveguides. In one set of embodiments, the present invention provides wearable augmented reality glasses incorporating projector systems that utilize transparent waveguides and blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides wearable augmented reality glasses incorporating projection systems having digital lighting processing engines illuminated by blue and/or green laser devices with optical delivery to the eye using transparent waveguides. In one embodiment, the present invention provides wearable augmented reality glasses incorporating a 3D display system with optical delivery to the eye using transparent waveguides. There are other embodiments as well.

The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxidation VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof.

The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxide VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof.

In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

A light emitting device includes: a first n-type semiconductor layer disposed on a substrate; a tunnel junction layer disposed on a part of the first n-type semiconductor layer; a p-type semiconductor layer disposed on the first n-type semiconductor layer and covering the tunnel junction layer; an active layer disposed on the p-type semiconductor layer; and a second n-type semiconductor layer disposed on the active layer.

An object of the present invention is to provide a method for manufacturing an optical device having a laser diode, which method is suitable for mass production, and an optical device having a laser diode which allows accurate property evaluations thereof with small measurement errors. Specifically, the method includes: an etching process of etching a semiconductor lamination unit to form a mesa structure having a resonator end face, thereby forming a laser diode; and a reflecting layer forming process of forming a light reflecting layer such that the light reflecting layer covers entire side surfaces of the mesa structure, wherein the semiconductor lamination unit has a substate, a n-type clad layer including a nitride semiconductor layer having n-type conductivity, a light-emitting layer including at least one quantum well, and a p-type clad layer including a nitride semiconductor layer having p-type conductivity, laminated in this order.

In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular N.sub.2 rich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular H.sub.2 gas.