The embodiments described herein provide a high-luminous flux laser-based white light source. A plurality of laser packages are arranged in an array pattern on a common support member. The plurality of laser packages each include one or more laser diode devices and a phosphor member. The phosphor member converts a fraction of the electromagnetic radiation from each of the laser diode devices to an emitted electromagnetic radiation and a white light is outputted.

An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof. A beam shaper may be configured to direct the white light emission and an infrared emission for illuminating a target of interest and transmitting a data signal. In some configurations, sensors and feedback loops are included.

A light source or system configured to emit visible white light and infrared emissions includes a laser diode, a wavelength converter, and an infrared emitting laser diode.

A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof. A beam shaper may be configured to direct the white light emission and an infrared emission for illuminating a target of interest and transmitting a data signal. In some configurations, sensors and feedback loops are included.

A semiconductor light emitting device of an embodiment of the present disclosure includes: a nitride semiconductor substrate having, as a principal plane, a plane inclined from a c-plane in an m-axis direction in a range from 60° to 90° both inclusive; an underlayer provided on the nitride semiconductor substrate and including a first layer and a second layer that are stacked on each other, the first layer including Al.sub.x2In.sub.x1Ga.sub.(1-x1-x2)N (0<x1<1, 0≤x2<1) and having a dislocation along an intersection line of the principal plane of the nitride semiconductor substrate and a (1-100) plane, the second layer including Al.sub.y2In.sub.y1Ga.sub.(1-y1-y2)N (0<y1<1, 0≤y2<1) and having a dislocation along an intersection line of the principal plane of the nitride semiconductor substrate and a (0001) plane; and a device layer including an active layer provided on the underlayer.

An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.

A semiconductor light emitting device of one embodiment of the present disclosure incudes: a GaN substrate having, as a principal plane, a semipolar plane or a non-polar plane inclined from a c-plane in an m-axis direction or an a-axis direction within a range from 20° to 90° both inclusive; an active layer provided on the GaN substrate; and an n-type cladding layer provided between the GaN substrate and the active layer, and including a first layer on the active layer side and a second layer on the substrate side, the first layer including AlGaInN containing 0.5% or more of indium (In), and the second layer being lower in refractive index than the first layer.

Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.

The semiconductor light-emitting element includes: a stacking structure having a substrate and a semiconductor layer between a first surface and a second surface that face each other in order from a side on which the first surface is located, the substrate including a compound semiconductor, and the semiconductor layer being crystal-grown on the substrate and including a light-emitting region; a first depression formed on at least a portion of a first edge adjacent to the second surface of the stacking structure; and a second depression formed on a second edge extending along a thickness direction of the stacking structure.