A method of forming semiconductor nanorods includes: placing, in a chamber, a masking material and a base comprising a semiconductor, wherein an etching rate of the masking material in a chemical reaction with a reactant gas during dry etching is lower than an etching rate of a semiconductor in a chemical reaction with the reactant gas during dry etching; and performing dry-etching to form a plurality of dot-masks, each having a form of a dot containing the masking material, on a surface of the semiconductor and to remove a portion of the semiconductor exposed from the dot-masks, wherein the dry-etching is performed under a pressure in the chamber in a predetermined range that allows the masking material scattered by the etching to be adhered to a surface of the semiconductor with a predetermined size of the dots and a predetermined density of the dots.

Disclosed herein is a semiconductor device. The semiconductor device includes a substrate, a first conductive type semiconductor layer disposed over the substrate, an active layer disposed over the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed over the active layer. The first conductive type semiconductor layer includes a first layer, a second layer and a third layer having different composition ratios of indium (In). The first semiconductor layer is disposed close to the active layer. The second semiconductor layer is disposed under the first semiconductor layer. The third semiconductor layer is disposed under the second semiconductor layer. In content is reduced from the active layer to the third semiconductor layer, and In content of the third semiconductor layer may be 5% or more to 10% or less of that of the active layer.

A light emitting device according to an embodiment of the present disclosure includes: a first layer including Al.sub.x2In.sub.x1Ga.sub.(1-x1-x2) N (0<x1<1, 0?x2<1); a second layer that is provided on the first layer and includes Al.sub.y2In.sub.y1Ga.sub.(1-y1-y2) N (0<y1<1, 0?y2<1) that is lattice relaxed with respect to the first layer; and a third layer that is provided on the second layer, includes Al.sub.z2In.sub.z1Ga.sub.(1-z1-z2) N (0<z1<1, 0?z2<1) that is lattice relaxed with respect to the second layer, and includes an active layer. A lattice constant aGAN of GaN in an in-plane direction, a lattice constant al of the first layer in an in-plane direction, a lattice constant a2 of the second layer in an in-plane direction, and a lattice constant a3 of the third layer in an in-plane direction have a relationship of aGAN<a2<a1, a3.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular N.sub.2 rich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular H.sub.2 gas.

The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

The present invention relates to a semiconductor optoelectronic device (10) comprising a junction (12) consisting a stack of layers defining an N-doped region, an intermediate region and a P-doped region, at least one layer, called a modulated layer, of the N-doped region and/or of the P-doped region and/or of the intermediate region, being formed of a plurality of stacks of sub-layers, each sub-layer differing from the other sub-layers of the same stack by a feature of the material of the sub-layer, called a distinctive feature, the thicknesses and distinctive features of the sub-layers being chosen so as to reduce the absorption of photons in the corresponding region compared with a semiconductor optoelectronic device, known as a reference device, the only difference being that each modulated layer is replaced by an unmodulated layer of the same thickness as the modulated layer and with identical features except for the distinctive feature.

A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence having at least one active layer and a ridge waveguide structure having a ridge extending in a longitudinal direction from a light output surface to a rear side surface and being delimited by ridge side surfaces in a lateral direction perpendicular to a longitudinal direction, wherein the ridge has a first region and a second region adjacent thereto in a vertical direction perpendicular to the longitudinal and lateral directions, wherein the ridge includes a first semiconductor material in the first region and at least one second semiconductor material different from the first semiconductor material in the second region, wherein the ridge has a first width in the first region, and wherein the ridge has a second width in the second region, the second width being larger than the first width.

In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

Resonant optical cavity light emitting devices are disclosed, where the device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector may have a metal composition comprising elemental aluminum or may be a distributed Bragg reflector. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K.Math./n. K is a constant ranging from 0.25 to less than 1, is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.