Patent classifications
H01S5/3224
INTEGRATED HIGH-POWER TUNABLE LASER WITH ADJUSTABLE OUTPUTS
A tunable laser that includes an array of parallel optical amplifiers is described. The laser may also include an intracavity NM coupler that couples power between a cavity mirror and the array of parallel optical amplifiers. Phase adjusters in optical paths between the NM coupler and the optical amplifiers can be used to adjust an amount of power output from M-1 ports of the NM coupler. A tunable wavelength filter is incorporated in the laser cavity to select a lasing wavelength.
Integrated high-power tunable laser with adjustable outputs
A tunable laser that includes an array of parallel optical amplifiers is described. The laser may also include an intracavity NM coupler that couples power between a cavity mirror and the array of parallel optical amplifiers. Phase adjusters in optical paths between the NM coupler and the optical amplifiers can be used to adjust an amount of power output from M1 ports of the NM coupler. A tunable wavelength filter is incorporated in the laser cavity to select a lasing wavelength.
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM
Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM
Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.