A source of white light constructed of a vacuum glass chamber, containing an optically active element, a generator of an IR electromagnetic radiation beam equipped with a laser IR diode, a battery, a focusing lens, and, optionally, a reflector characterized in that the optically active element contained in the vacuum chamber is a thin layer graphene matrix with the thickness of up to 3 mm Embodiments also relate to a method of white light generation by the above-mentioned white light source.

Disclosed herein are materials for nanoimprinting lithography (NIL) and devices molded from the materials using NIL processes. According to certain aspects, an NIL material includes a mixture including a light-sensitive base resin and nanoparticles. The light-sensitive base resin is characterized by a first refractive index ranging from 1.58 to 1.77. The nanoparticles are characterized by a second refractive index greater than the first refractive index of the light-sensitive base resin. The mixture is curable to form a cured material characterized by a third refractive index greater than 1.78. The nanoparticles include from 45 wt. % to 90 wt. % of the cured material.

A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.

An edge emitting semiconductor laser and a method for operating an edge emitting semiconductor laser are disclosed. In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having an active zone configured to generate laser radiation from the material system AlInGaAs, a facet on the semiconductor layer sequence configured to couple-out and/or reflect the laser radiation and a protective layer sequence directly on the facet protecting the facet from damage, the protective layer sequence including a monocrystalline starting layer of a group 12 group 16 material, an intermediate layer of Si and at least one finishing layer consisting essentially of Al, Si and/or Ta and of O and optionally of N, so that the finishing layer is of a different material system than the starting layer and the intermediate layer, wherein the intermediate layer is oxidized on a side facing the finishing layer, and wherein the protective layer is arranged in a direction away from the semiconductor layer sequence in the indicated order.

A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.

In a semiconductor laser device that includes: a semiconductor laser element that outputs light from an output portion; and a metal stem that holds the semiconductor laser element, the metal stem includes a base that has a reference surface on an upper surface and a protrusion portion that protrudes upward from the reference surface, and the protrusion portion is provided with an installation surface on which the semiconductor laser element is installed and a side surface which is disposed on an identical plane with a part of an outer circumferential surface of the base.

The present invention relates to a vertical cavity surface emitting laser (VCSEL) and a manufacturing method thereof, and more specifically, to a high-efficiency oxidation VCSEL which emits laser beams having a peak wavelength of 860 nm, and a manufacturing method thereof.

In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

An all-epitaxial, electrically injected surface-emitting green laser operates in a range of about 520-560 nanometers (nm). At 523 nm, for example, the device exhibits a threshold current density of approximately 0.4 kilo-amperes per square centimeter (kA/cm.sup.2), which is over one order of magnitude lower than that of previously reported blue laser diodes.

The present technology provides a surface emitting laser capable of suppressing a decrease in luminous efficiency.

The present technology provides a surface emitting laser including: first and second multilayer film reflectors; a plurality of active layers laminated together between the first and second multilayer film reflectors; a tunnel junction disposed between two active layers adjacent to each other in a lamination direction among the plurality of active layers; and an oxide confinement layer disposed between one active layer of the two adjacent active layers and the tunnel junction. According to the present technology, it is possible to provide a surface emitting laser capable of suppressing a decrease in luminous efficiency.