Embodiments of the present disclosure include optical transmitters and transceivers with improved reliability. In some embodiments, the optical transmitters are used in network devices, such as in conjunction with a network switch. In one embodiment, lasers are operated at low power to improve reliability and power consumption. The output of the laser may be modulated by a non-direct modulator and received by integrated optical components, such as a modulator and/or multiplexer. The output of the optical components may be amplified by a semiconductor optical amplifier (SOA). Various advantageous configurations of lasers, optical components, and SOAs are disclosed. In some embodiments, SOAs are configured as part of a pluggable optical communication module, for example.

Embodiments of the present disclosure include optical transmitters and transceivers with improved reliability. In some embodiments, the optical transmitters are used in network devices, such as in conjunction with a network switch. In one embodiment, lasers are operated at low power to improve reliability and power consumption. The output of the laser may be modulated by a non-direct modulator and received by integrated optical components, such as a modulator and/or multiplexer. The output of the optical components may be amplified by a semiconductor optical amplifier (SOA). Various advantageous configurations of lasers, optical components, and SOAs are disclosed. In some embodiments, SOAs are configured as part of a pluggable optical communication module, for example.

A single-mode micro-laser based on a single whispering gallery mode optical microcavity and a preparation method thereof described includes: preparing a desired single whispering gallery mode optical microcavity doped with rare earth ions or containing a gain material such as quantum dots, wherein an optical microcavity configuration include a micro-disk cavity, a ring-shaped microcavity, and a racetrack-shaped microcavity; a material type include lithium niobate, silicon dioxide, silicon nitride, etc.; preparing an optical fiber cone or an optical waveguide of a required size which can excite high-order modes of the optical microcavity, such as a ridge waveguide and a circular waveguides; and coupling, integrating, and packaging the optical fiber cone or the optical waveguide with the microcavity. A pump light is coupled to the optical fiber cone or the optical waveguide to excite a compound mode with a polygonal configuration.

Systems and methods presented herein include efficient and effective Light Emitting Devices (LED) devices. In one embodiment, a light emitting device comprises: a substrate comprising silicon; a first portion comprising a group III-V compound component with a first type of doping; a second portion comprising an active region, a shell comprising a gradient configuration with piezoelectric field compensation characteristics; and a third portion comprising a group III-V compound component with a second type of doping, The silicon substrate is coupled to the first portion. The first portion and shell are coupled to the second portion with is in turn coupled to the third portion. The active region comprises a quantum core structure with strain compensation barriers and polarization doping. The strain compensated barriers form multiple quantum wells. In one embodiment, the strain compensation barriers include AlGaN in a configuration that compensates tensile strain within the active region. The AlGaN can also be configured to induce polarization charges and enhance indium incorporation. In one embodiment, the shell comprises AlGaN with a negative Al composition gradient.

[Object] To provide a vertical cavity surface emitting laser element that has excellent producibility and is suitable for high output and a method of producing the vertical cavity surface emitting laser element.

[Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: a first DBR; a second BR; an active layer; and a tunnel junction layer. The first DBR reflects light of a specific wavelength. The second DBR reflects light of the wavelength. The active layer is disposed between the first DBR and the second DBR. The tunnel junction layer is disposed between the first DBR and the active layer and forms a tunnel junction. Respective layers between the first DBR and the second DBR have an inner peripheral region that is on an inner peripheral side as viewed from a direction perpendicular to a layer surface, and an outer peripheral region surrounding the inner peripheral region, ions being implanted into the outer peripheral region of the tunnel junction layer, the outer peripheral region having a lower carrier concentration and a larger electric resistance than the inner peripheral region of the tunnel junction layer.

The invention relates, inter alia, to an optical semiconductor amplifier (10), in which a plurality of quantum dots (QD) are arranged in at least one quantum dot layer (21-24) of a semiconductor element (11) of the semiconductor amplifier (10), wherein die semiconductor element (11) has a preferred direction (X) located in the quantum dot layer plane, and elongated quantum dots (QD) are present, each of which is longer in the said preferred direction (X) than in a transverse direction (Y) perpendicular thereto and is likewise located in the quantum dot layer plane. According to the invention, the beam amplification direction (SVR) of die semiconductor amplifier (10), which is defined by a fictitious connecting line (VL) between an input (A10) of the semiconductor amplifier (10) that serves for the irradiation of input radiation (Se), and an output (A10) of the semiconductor amplifier (10) that serves for outputting the amplified radiation (Sa), is arranged parallel, or at least approximately parallel, to the transverse direction (Y).

A laser integrated photonic platform to allow for independent fabrication and development of laser systems in silicon photonics. The photonic platform includes a silicon substrate with an upper surface, one or more through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate. The photonic platform includes a silicon substrate wafer with through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate for mating the photonic platform to a photonics integrated circuit. The photonic platform also includes a III-V semiconductor material structure wafer, where the III-V wafer is bonded to the upper surface of the silicon substrate and includes at least one active layer forming a light source for the photonic platform.

Provided is a light modulation element including a first contact layer, a second contact layer, an active layer provided between the first contact layer and the second contact layer, a first contact plug provided between the first contact layer and the active layer, and a second contact plug provided between the second contact layer and the active layer, wherein a width of at least one of the first contact plug and the second contact plug is less than a width of the active layer.

Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.

A semiconductor device comprising a nominally or exactly or equivalent orientation silicon substrate on which is grown directly a <100 nm thick nucleation layer (NL) of a III-V compound semiconductor, other than GaP, followed by a buffer layer of the same compound, formed directly on the NL, optionally followed by further III-V semiconductor layers, followed by at least one layer containing III-V compound semiconductor quantum dots, optionally followed by further III-V semiconductor layers. The NL reduces the formation and propagation of defects from the interface with the silicon, and the resilience of quantum dot structures to dislocations enables lasers and other semiconductor devices of improved performance to be realized by direct epitaxy on nominally or exactly or equivalent orientation silicon.