A nanowire can include a first semiconductor portion, a second portion including a quantum structure disposed on the first portion, and a second semiconductor portion disposed on the second portion opposite the first portion. The quantum structure can include one or more quantum core structures and a quantum core shell disposed about the one or more quantum core structures. The one or more quantum core structures can include one or more quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.

Wafer bonded GaN monolithic integrated circuits and methods of manufacture of wafer bonded GaN monolithic integrated circuits and their related structures for electronic and photonic integrated circuits and for multi-functional integrated circuits, are described herein. Other embodiments are also disclosed herein.

A quantum dot comb laser, is provided that comprises a first waveguide having a first width; and a second waveguide running above the first waveguide that includes: a quantum dot layer; a first region of a second width less than the first width; a second region connected to the first region and comprising a reflective grating; and a third region connected at a first end to the second region and at a second end to an output surface wherein the third region tapers from the second width at the first end to a third width, less than the second width, at the second end.

A semiconductor laser is disclosed. Trim loss region is provided in inner ridge region of surface of transmission layer facing away from substrate, blind hole is provided in trim loss region, and distance from bottom surface of blind hole to surface of second cladding layer facing to substrate is smaller than evanescent wave length in transmission layer. Blind hole can affect optical field characteristics of light transmission in semiconductor laser by affecting evanescent wave. A method for fabricating a semiconductor laser is also provided.

An object of the present invention is to provide a core shell particle having high luminous efficacy and excellent durability; a method of producing the same; and a film obtained by using the core shell particle. The core shell particle of the present invention includes: a core which contains a Group III element and a Group V element; a first shell which covers at least a part of a surface of the core; and a second shell which covers at least a part of the first shell, in which at least a part of a surface of the core shell particle contains a metal-containing organic compound containing a metal element and a hydrocarbon group.

A waveguide heterostructure for a semiconductor laser with an active part, comprising an active region layer depending of the type of semiconductor used, which is sandwiched between an electrode layer and a substrate, usable for dispersion compensation in a semiconductor laser frequency comb setup, an optical frequency comb setup and a manufacturing method.

A laser integrated photonic platform to allow for independent fabrication and development of laser systems in silicon photonics. The photonic platform includes a silicon substrate with an upper surface, one or more through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate. The photonic platform includes a silicon substrate wafer with through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate for mating the photonic platform to a photonics integrated circuit. The photonic platform also includes a III-V semiconductor material structure wafer, where the III-V wafer is bonded to the upper surface of the silicon substrate and includes at least one active layer forming a light source for the photonic platform.

An ambient light rejecting screen used in a laser light source projector, which generates a light with a first wavelength and a light with a second wavelength, is provided. The screen includes a base, a light absorbing layer, a first filter layer and a second filter layer. The light absorbing layer is disposed on the base. The first filter layer is disposed on the light absorbing layer. The crystallization characteristic of the first filter layer corresponds to the light with the first wavelength and generates a reflective light with the first wavelength, and allows the light with remaining wavelengths to pass through. The second filter layer is disposed on the light absorbing layer. The crystallization characteristic of the second filter layer corresponds to the light with the second wavelength used to generate the reflective light with the second wavelength and allows the light with remaining wavelengths to pass through.

The optical amplifier has an inhomogeneously broadened gain material capable of generating a plurality of ensemble gains. A first optical filter and a second optical filter are provided in the photonic integrated circuit. The apparatus has a first laser cavity which includes the optical amplifier, the first optical filter optically coupled to each other and at least two mirrors. The apparatus has a second laser cavity which includes the optical amplifier, the second optical filter optically coupled to each other and at least two mirrors. The first optical filter is tunable to a respective first ensemble gain generated by the optical amplifier and the second filter is tunable to a respective second ensemble gain generated by the optical amplifier; and the second ensemble gain is different from the first ensemble gain. A laser source and an optical transmitter are also disclosed.

A distributed feedback (DFB) laser that includes a substrate comprising a first surface and a second surface, wherein the substrate comprises silicon; a plurality of shallow trench isolations (STIs) located over the second surface of the substrate; a grating region located over the plurality of STIs and the substrate, wherein the grating region comprises a III-V semiconductor material; a non-intentional doping (NID) region located over the grating region; and a contact region located over the NID region.