A system includes a waveguide and an edge-emitting laser. The edge-emitting laser is configured to lase coherent light into the waveguide. The edge-emitting laser includes an optical cavity having an active gain section and a passive section. The active gain section is configured to amplify an optical power of light reflecting within the optical cavity. The passive section increases a functional length of the optical cavity such that a total length of the optical cavity reduces fringe interference of the coherent light propagating through the waveguide.

An array of monolithic wavelength division multiplexing (WDM) vertical cavity surface emitting lasers (VCSELs) with spatially varying gain peak and Fabry Perot wavelength is provided. Each VCSEL includes a lower distributed Bragg reflector (DBR), a Fabry Perot tuning/current spreading layer, and a structure comprising a multiple quantum well (MQW) layer sandwiched between a lower separate confinement heterostructure (SCH) layer and an upper SCH layer. The structure is sandwiched between the DBR and the Fabry Perot tuning/current spreading layer. Each MQW experiences a different amount of quantum well intermixing and concomitantly a different wavelength shift. Each VCSEL further includes a top mirror on the Fabry Perot tuning/current spreading layer. A method is also provided for manufacturing the array.

A system includes a waveguide and an edge-emitting laser. The edge-emitting laser is configured to lase coherent light into the waveguide. The edge-emitting laser includes an optical cavity having an active gain section and a passive section. The active gain section is configured to amplify an optical power of light reflecting within the optical cavity. The passive section increases a functional length of the optical cavity such that a total length of the optical cavity reduces fringe interference of the coherent light propagating through the waveguide.

A laser chip including a plurality of stripes is disclosed, where a laser stripe can be grown with an initial optical gain profile, and its optical gain profile can be shifted by using an intermixing process. In this manner, multiple laser stripes can be formed on the same laser chip from the same epitaxial wafer, where at least one laser stripe can have an optical gain profile shifted relative to another laser stripe. For example, each laser stripe can have a shifted optical gain profile relative to its neighboring laser stripe, thereby each laser stripe can emit light with a different range of wavelengths. The laser chip can emit light across a wide range of wavelengths. Examples of the disclosure further includes different regions of a given laser stripe having different intermixing amounts.

A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescence mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

A laser chip including a plurality of stripes is disclosed, where a laser stripe can be grown with an initial optical gain profile, and its optical gain profile can be shifted by using an intermixing process. In this manner, multiple laser stripes can be formed on the same laser chip from the same epitaxial wafer, where at least one laser stripe can have an optical gain profile shifted relative to another laser stripe. For example, each laser stripe can have a shifted optical gain profile relative to its neighboring laser stripe, thereby each laser stripe can emit light with a different range of wavelengths. The laser chip can emit light across a wide range of wavelengths. Examples of the disclosure further includes different regions of a given laser stripe having different intermixing amounts.

In an embodiment a method for producing an optoelectronic semiconductor component includes A) providing a semiconductor body comprising, sequentially in a vertical direction, a first layer of a first conductivity type, an active layer formed as a quantum well structure provided for emission of electromagnetic radiation, and a second layer of a second conductivity type and B) irradiating the semiconductor body with a focused electromagnetic radiation such that a focus region of the electromagnetic radiation lies within the active layer and overlaps with the quantum well structure, wherein the electromagnetic radiation has an intensity which is sufficiently large in the focus region to cause point defects in the quantum well structure so that a defect region is formed and so that a generation of the point defects is limited to the focus region, and wherein a density of point defects in the first layer and the second layer is not changed in B).

In an embodiment a method for producing an optoelectronic semiconductor component includes A) providing a semiconductor body comprising, sequentially in a vertical direction, a first layer of a first conductivity type, an active layer formed as a quantum well structure provided for emission of electromagnetic radiation, and a second layer of a second conductivity type and B) irradiating the semiconductor body with a focused electromagnetic radiation such that a focus region of the electromagnetic radiation lies within the active layer and overlaps with the quantum well structure, wherein the electromagnetic radiation has an intensity which is sufficiently large in the focus region to cause point defects in the quantum well structure so that a defect region is formed and so that a generation of the point defects is limited to the focus region, and wherein a density of point defects in the first layer and the second layer is not changed in B).

A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

An array of monolithic wavelength division multiplexed (WDM) vertical cavity surface emitting lasers (VCSELs) is provided with quantum well intermixing. Each VCSEL includes a bottom distributed Bragg reflector (DBR), an upper distributed Bragg reflector, and a laser cavity therebetween. The laser cavity includes a multiple quantum well (MQW) layer sandwiched between a lower separate confinement heterostructure (SCH) and an upper SCH layer. Each MQW region experiences a different amount of quantum well intermixing and concomitantly a different lasing wavelength shift.