A multi-active region cascaded Bragg reflection waveguide edge-emitting diode laser, including a substrate, a buffer layer, an N-type cladding layer, an N-type waveguide layer, a cascaded multi-active region, a P-type waveguide layer, a P-type cladding layer and a capping layer arranged sequentially from bottom to top. The waveguide layer adopts a Bragg reflection waveguide structure formed by periodic arrangement of high and low refractive index layers. The cascaded multi-active region includes multiple active regions, tunnel junctions and a confinement layer. A fundamental mode near field of the laser is formed by periodic oscillating peaks, with an envelope close to Gaussian distribution. There are large-swing oscillation peaks near the cascaded multi-active region. The active regions are located at peaks of the fundamental mode near field, and tunnel junctions are inserted at troughs with low light intensity.

This disclosure describes a method of forming a VCSEL with a structural birefringent cavity. This method comprises growing a bottom distributed Bragg reflector (DBR) and a first part of a cavity on a substrate to form a bottom structure comprising a plurality of layers. One or more anisotropic features are etched on a upper layer of the bottom structure to produce a patterned growth interface. A remaining part of the cavity and a top DBR on the patterned growth interface are overgrown to form an epitaxial structure. One or more oxide apertures are formed in the epitaxial structure.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a first set of epitaxial layers for a bottom-emitting VCSEL disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers for a top-emitting VCSEL disposed on the first set of epitaxial layers for the bottom-emitting VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The top-emitting VCSEL and the bottom-emitting VCSEL may be configured to emit light in opposite light emission directions.

A vertical-cavity surface-emitting laser (VCSEL) array may include an n-type substrate layer and an n-type metal on a bottom surface of the n-type substrate layer. The n-type metal may form a common anode for a group of VCSEL. The VCSEL array may include a bottom mirror structure on a top surface of the n-type substrate layer. The bottom mirror structure may include one or more bottom mirror sections and a tunnel junction to reverse a carrier type within the bottom mirror structure. The VCSEL array may include an active region on the bottom mirror structure and an oxidation layer to provide optical and electrical confinement. The VCSEL array may include an n-type top mirror on the active region, a top contact layer over the n-type top mirror, and a top metal on the top contact layer. The top metal may form an isolated cathode for the VCSEL array.

Disclosed is a multi junction bottom emitting vertical cavity surface emitting laser (VC SEL) including: an electrical n-contact layer; a semiconductor substrate disposed on the electrical n-contact layer; an etch-stop layer disposed on the semiconductor substrate; a n-type semiconductor distributed Bragg reflector (nDBR) including a first plurality of layers of semiconductor material disposed on the etch-stop layer; a laser cavity having a plurality of active region disposed on the nDBR; a hybrid metal-semiconductor reflector disposed on the laser cavity; wherein the hybrid metal-semiconductor reflector is a p-type semiconductor distributed Bragg reflector (pDBR) including a second plurality of layers of semiconductor material, a phase matching layer disposed on the pDBR and a metallic reflector disposed on the phase matching layer; and an electrical p-contact layer formed on the hybrid metal-semiconductor reflector.

An extremely sensitive spectroscopy method utilizes a laser modified to an extremely low emission with an integrated control system, interfaced within a typical Raman platform to comprise low energy laser spectroscopy (LELS). LELS acquires and utilizes a quantum entangled state of photons and particles, including omnipresent cosmological dark matter particles (OCDM) and omnipresent cosmological dark energy (OCDE). The OCDM and OCDE matter has an affinity to particles of same OCDM and OCDE matter in target specimens, with same-time data results of high sensitivity. In a semiconductor light emitter, electron flow at a low energy level is provided to a quantum well to produce a quantum tunneling of electrons into an active region of the laser quantum well and creating sublasering. Sublasering allows OCDM and OCDE to become entangled with other particles and energies in the laser's quantum well and create a transmission package comprising quantum entangled fields, waves, wave packages, states and energies. Providing a triggering pulse causes a second tunneling, carrying the transmission package for emission.

An extremely sensitive spectroscopy method utilizes a laser modified to an extremely low emission with an integrated control system, interfaced within a typical Raman platform to comprise low energy laser spectroscopy (LELS). LELS acquires and utilizes a quantum entangled state of photons and particles, including omnipresent cosmological dark matter particles (OCDM) and omnipresent cosmological dark energy (OCDE). The OCDM and OCDE matter has an affinity to particles of same OCDM and OCDE matter in target specimens, with same-time data results of high sensitivity. In a semiconductor light emitter, electron flow at a low energy level is provided to a quantum well to produce a quantum tunneling of electrons into an active region of the laser quantum well and creating sublasering. Sublasering allows OCDM and OCDE to become entangled with other particles and energies in the laser's quantum well and create a transmission package comprising quantum entangled fields, waves, wave packages, states and energies. Providing a triggering pulse causes a second tunneling, carrying the transmission package for emission.

Provided herein are systems and methods for switching the generation of light emissions using charge separation in a gain medium to manipulate carrier lifetimes. For a given output pulse energy, extended carrier lifetimes may allow carrier generation powers to be reduced and/or carrier generation times to be extended. L-switching of light output from a gain medium may be combined with other switching schemes utilizing different approaches to control lasing, such as Q-switching.

A vertical cavity surface emitting laser includes an optical resonator, a photodiode, and an electrical contact arrangement. The optical resonator includes a semiconductor multilayer stack. The semiconductor multilayer stack includes, in a direction of growth of the multilayer stack, a first distributed Bragg reflector, a second distributed Bragg reflector, and an active region for laser emission arranged between the first distributed Bragg reflector and second distributed Bragg reflector. The electrical contact arrangement is arranged to electrically pump the optical resonator and to electrically contact the photodiode. A reflectivity of the second distributed Bragg reflectoris higher than a reflectivity of the first distributed Bragg reflector. The photodiode has an absorbing region arranged in the second distributed Bragg reflector. A tunnel junction is arranged between the photodiode and the active region.

A vertical cavity surface emitting laser (VCSEL) device may include a substrate layer and a first set of epitaxial layers, for a first VCSEL, disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers, for a second VCSEL, disposed on the first set of epitaxial layers for the first VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The first VCSEL and the second VCSEL may be configured to emit light in a light emission direction. The at least one first active layer of the first VCSEL may be offset in the light emission direction from the at least one second active layer of the second VCSEL.