Disclosed herein are self-mixing interference (SMI) sensors, frequency modulated continuous wave (FMCW) sensors, and electronic devices that include SMI and FMCW sensors. Both types of sensors include a photonic crystal surface-emitting laser diode. The SMI sensors include a photonic crystal surface-emitting laser diode configured to undergo SMI between a primary emitted light from the photonic crystal surface-emitting laser diode and reflections thereof from an object. The SMI sensor includes a photodetector configured to receive a secondary light emission from the photonic crystal surface-emitting laser diode and detect a parameter related to the SMI, from which distance or motion to the object may be inferred. The FMCW sensors include a photonic crystal surface-emitting laser diode configured to emit a primary light emission toward the object and a secondary light emission toward a light beam combiner. The light beam combiner also receives reflections from the object and detects distances and/or motion of the object based on the frequency modulations of the two light beams.

An edge emitting laser (EEL) device includes a substrate, an n-type buffer layer, a first n-type cladding layer, a grating layer, a spacer layer, a lower confinement unit, an active layer, an upper confinement unit, a p-type cladding layer, a tunnel junction layer and a second n-type cladding layer sequentially arranged from bottom to top. The tunnel junction layer can stop an etching process from continuing to form the second n-type cladding layer into a predetermined ridge structure and converting a part of the p-type cladding layer into the n-type cladding layer to reduce series resistance of the EEL device. Therefore, the optical field and active layer tend to be coupled at the middle of the active layer, the lower half of the active layer can be utilized effectively, and the optical field is near to the grating layer to achieve better optical field/grating coupling efficiency and lower threshold current.

The present technology provides a surface emitting laser that can achieve a high output while suppressing an increase in manufacturing cost, and includes a current constriction region.

The surface emitting laser according to the present technology includes: first and second reflection mirrors that are mutually laminated; and a middle part that is disposed between the first and second reflection mirrors, the middle part has a laminated structure formed by laminating a plurality of semiconductor structures including each of a mutually laminated active layer and tunnel junction layer as an intermediate layer, and a peripheral part of at least the tunnel junction layer of the at least one semiconductor structure has higher resistance than resistance of a center part. The surface emitting laser according to the present technology can provide the surface emitting laser that can achieve a high output while suppressing an increase in manufacturing cost, and includes a current constriction region.

An apparatus is provided to receive a three-dimensional (3D) map of at least a part of a body of a user. A tunable VCSEL laser has one or more active regions having quantum wells and barriers, the active regions surrounded by one or more p-n junctions, the one or more active regions can include a selected shape structure, as well as one or more tunnel junctions (TJ), one or more apertures are provided with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's, planar structures and or additional BTJ's created during a regrowth process that is independent of a first growth process with a VCSEL output. Optics collect and focus light emitted by the output of the VCSEL laser defining a baseline light pattern having a given pitch, corresponding to a two-dimensional pattern of the optical emitters on a substrate, producing and projecting multiple overlapping replicas of the baseline light pattern with a composite pattern density that is finer than the pitch of the baseline light pattern.

There is provided a surface emitting laser that can suppress position shift between the center of a current constriction region and the center of a lens-shaped part in plan view.

The surface emitting laser according to the present technology includes: first and second reflection mirrors; and a semiconductor structure that is disposed between the first and second reflection mirrors, and the semiconductor structure internally includes a convex-shaped part to which a current constriction region is set, and that protrudes toward a side of the second reflection mirror, and includes a lens-shaped part that meets the convex-shaped part on a top layer on the side of the second reflection mirror. According to the present technology, it is possible to provide the surface emitting laser that can suppress position shift between the center of the current constriction region and the center of the lens-shaped part in plan view.

A tunable VCSEL includes a top DBR; a bottom DBR; a plurality of successive active regions with tunnel junctions TJ's, each active region includes quantum wells and barriers surrounded by one or more p-n junctions; and a grating at a top of the top DBR.

A VCSEL system includes a tunable VCSEL laser with one or more active regions having quantum wells and barriers. The one or more active regions surrounded by one or more p-n junctions. The one or more active regions can include one or more tunnel junctions (TJ), and one or more apertures One or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's. Planar structures and or additional BTJ's, created during a regrowth process, are independent of a first growth process. The VCSEL has an HCG grading. The VCSEL includes a sacrificial layer.

A light emitting apparatus includes a VCSEL laser. The VCSEL laser has one or more active regions with quantum wells and barriers. The active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, as well as one or more tunnel junctions (TJ). One or more apertures are provided with the selected shape structure. One or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's, planar structures and or additional BTJ's are created during a regrowth process that is independent of a first growth process. A VCSEL output is determined in response to a monitoring application of the VCSEL. The VCSEL has an HCG grating and a bottom DBR. An etched post is between an active region and a sacrificial layer.

A transceiver module includes a VCSEL laser with one or more active regions having quantum wells and barriers. The one or more active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, one or more tunnel junctions (TJ), one or more apertures with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured. Additional TJ's, planar structures and or additional BTJ's are created during a regrowth process that is independent of a first growth process. The VCSEL laser has an HCG grading and a bottom DBR. The transceiver module is configured to convert optical signals into electrical signals.

An apparatus is provided to receive a three dimensional (3D) map of at least a part of a body of a user. A light emitting device is included with tunable VCSEL laser with one or more active regions having quantum wells and barriers. The active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure one or more tunnel junction (TJ) 20s provided. One or more apertures are provided with the selected shape structure. One or more buried tunnel junctions (BTJ) or oxide confine the apertures, additional TJ's, planar structures and or additional BTJ's created during a regrowth process that is independent of a first growth process. A VCSEL output is determined in response to an application of the VCSEL laser. The VCSEL laser includes an HCG grating and a bottom DBR. A user monitoring device 100 includes the VCSEL laser. A user monitoring device that includes the VCSEL laser 10. The light emitting device is included in a camera of a communication device.