In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

A vertical cavity surface emitting laser element includes a first light reflecting film, a nitride semiconductor layered body, a p-electrode and a second light reflecting film. The nitride semiconductor layered body includes an n-side semiconductor layer disposed on the first light reflecting film, an active layer disposed on the n-side semiconductor layer, and a p-side semiconductor layer disposed on the active layer. The p-side semiconductor layer includes a protrusion and a surface around the protrusion. The p-electrode is in contact with an upper surface of the protrusion, and extends to the surface around the protrusion. The p-electrode is light-transmissive. The second light reflecting film is disposed on the p-electrode. A height of the protrusion as measured from the surface around the protrusion is smaller than a thickness of the p-electrode.

A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

An electrically pumped photonic-crystal surface-emitting laser, the epitaxy structure has a first mesa, the first mesa has multiple air holes and forming a photonic crystal structure, the epitaxy structure further has a second mesa, the second mesa and photonic crystal structure is facing the same direction; a first metal electrode arranged on the insulating layer, and covering the photonic crystal structure; a second metal electrode arranged on the second mesa and protruding out of the groove, making the first metal electrode and the second metal electrode face the same direction; and further make the first metal electrode connect to the first connecting metal and make the second metal electrode connect to the second connecting metal for making the photonic crystal structure become flip chip.

A light-emitting device includes: a light-emitting element array including a plurality of light-emitting elements arranged; and a dummy concave mirror section surrounding the light-emitting element array, and the light-emitting elements each include a stacked structure including a stack of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer, a first light reflection layer formed on a base part surface, and a second light reflection layer. A first convex part is formed in a portion of the base part surface in which the first light reflection layer functioning as a concave mirror is formed, with respect to a second surface of the first compound semiconductor layer, and a second convex part is formed in a portion of an extending part of the base part surface in which the dummy concave mirror section is formed, with respect to the second surface of the first compound semiconductor layer.

A portable lighting apparatus is provided with a gallium-and-nitrogen containing laser diode based white light source combined with an infrared illumination source which are driven by drivers disposed in a printed circuit board assembly enclosed in a compact housing and powered by a portable power supply therein. The portable lighting apparatus includes a first wavelength converter configured to output a white-color emission and an infrared emission. A beam shaper may be configured to direct the white-color emission and the infrared emission to a front aperture of a compact housing of the portable lighting apparatus. An optical transmitting unit is configured to project or transmit a directional light beam of the white light emission and/or the infrared emission for illuminating a target of interest, transmitting a pulsed sensing signal or modulated data signal generated by the drivers therein. In some configurations, detectors are included for depth sensing and visible/infrared light communications.

A nanocrystal array, a laser device, and a display device are provided. The nanocrystal array includes a plurality of nanorods arranged in an array. Each nanorod includes a nanorod buffer layer, a first type semiconductor layer, a tunnel junction layer, a second type semiconductor layer, a multi-quantum well, and another first type semiconductor layer successively stacked on each other. The laser device and the display device include the nanocrystal array. The present disclosure may reduce the laser threshold and increase output power, and further improve the resolution and image quality of the display device.

A method for generating light emission is provided. The method includes providing a transistor element including collector, emitter, and base regions, a quantum cascade region between the base and collector regions, and quantum well structures for interband emission within the base or emitter regions. A waveband controller applies, via first and second electrodes with respect to the collector and base regions, a first electrical signal to control a base-collector junction bias level and select between first and second base-collector bias levels. Selection of the first base-collector bias level causes at least one of the emitter and base regions to produce interband-based light emission having a first wavelength of a first wavelength band. Selection of the second base-collector bias level causes the quantum cascade region to produce intraband-based light emission having a second wavelength of a second wavelength band.

A high-power edge-emitting semiconductor laser with asymmetric structure, comprising: a substrate layer; a lower cladding layer; a lower optical waveguide layer; a first lower barrier layer; a quantum well layer; a first upper barrier layer; an upper optical waveguide layer, and make the thickness of the upper optical waveguide layer be below 300 nm, the thickness of the upper optical waveguide layer is ⅓˜½ of the thickness of the lower optical waveguide layer; an upper cladding layer, and make the thickness of the upper cladding layer be below 900 nm, the thickness of the upper cladding layer is ⅓˜½ of the thickness of the lower cladding layer; and an ohmic contact layer formed on the upper cladding layer.

A portable lighting apparatus is provided with a gallium-and-nitrogen containing laser diode based white light source combined with an infrared illumination source which are driven by drivers disposed in a printed circuit board assembly enclosed in a compact housing and powered by a portable power supply therein. The portable lighting apparatus includes a first wavelength converter configured to output a white-color emission and an infrared emission. A beam shaper may be configured to direct the white-color emission and the infrared emission to a front aperture of a compact housing of the portable lighting apparatus. An optical transmitting unit is configured to project or transmit a directional light beam of the white light emission and/or the infrared emission for illuminating a target of interest, transmitting a pulsed sensing signal or modulated data signal generated by the drivers therein. In some configurations, detectors are included for depth sensing and visible/infrared light communications.