A distributed feedback (DFB) laser array includes a substrate, a semiconductor stacked structure, a first electrode layer, and a second electrode layer. The semiconductor stacked structure is formed above a surface of the substrate and includes two light-emitting modules and a tunnel junction. Each light-emitting module of the two light-emitting modules includes an active layer, a first cladding layer, and a second cladding layer. The active layer is installed between the first cladding layer and the second cladding layer, and the active layer has multiple lasing spots along a first direction, wherein the multiple lasing spots are used for generating multiple lasers. The tunnel junction is installed between the two light-emitting modules. The first electrode layer is formed above the semiconductor stacked structure. The second electrode layer is formed above another surface of the substrate.

The embodiments described herein provide a high-luminous flux laser-based white light source. A plurality of laser packages are arranged in an array pattern on a common support member. The plurality of laser packages each include one or more laser diode devices and a phosphor member. The phosphor member converts a fraction of the electromagnetic radiation from each of the laser diode devices to an emitted electromagnetic radiation and a white light is outputted.

The embodiments described herein provide a high-luminous flux laser-based white light source. A plurality of laser packages are arranged in an array pattern on a common support member. The plurality of laser packages each include one or more laser diode devices and a phosphor member. The phosphor member converts a fraction of the electromagnetic radiation from each of the laser diode devices to an emitted electromagnetic radiation and a white light is outputted.

A light emitting device includes a base, a first semiconductor laser element, a second semiconductor laser element, a lens member, and a waveplate. The base has a bottom part. The first semiconductor laser element is disposed on the bottom part of the base. The second semiconductor laser element is disposed on the bottom part of the base. The second semiconductor laser element has a different polarization direction from a polarization direction of the first semiconductor laser element. The lens member is a member into which light beams from the first semiconductor element and the second semiconductor laser element enter. The waveplate is configured to change the polarization direction of light from the first semiconductor laser element.

A multilayer wiring substrate includes a first wiring substrate including a plurality of stacked layers made of a thermo setting resin and having a wiring layer formed between each adjacent layer of the layers in a state in contact with the adjacent layers, a second wiring substrate made of a ceramic, and a joining layer disposed between a back surface of the first wiring substrate and a front surface of the second wiring substrate and configured to join the first wiring substrate and the second wiring substrate to each other, wherein at least a surface of the joining layer adjacent to the second wiring substrate is made of a thermo plastic resin.

A light emitting device includes a base having a bottom part, a first semiconductor laser element disposed on the bottom part of the base, and a first light reflecting member disposed on the bottom part of the base. The first light reflecting member has a light reflecting surface configured to reflect light emitted from the first semiconductor laser element. The light reflecting surface of the first light reflecting member is a curved surface configured such that, with respect to the major portion of the light emitted from the first semiconductor laser element, the beam divergence angle of the light reflected by the light reflecting surface is greater than zero and smaller than the beam divergence angle of the light irradiating the light reflecting surface.

Changing non-mechanically a direction of irradiating a laser. The laser apparatus includes an optical device and a laser irradiation device. The optical device has two reflection mirrors facing each other, and a waveguide between the two reflection mirrors. The laser irradiation device irradiates the optical device with laser. The optical device is configured so that at least a portion of the laser travels on the waveguide by being reflected by the two reflection mirrors in order. The optical device has an output surface that emits a portion of the laser. The laser irradiation device has a plurality of irradiation parts including a first irradiation part that irradiates a first laser and a second irradiation part that irradiates a second laser. When viewed from a normal direction of the output surface, a traveling direction of the first laser is not parallel to a traveling direction of the second laser.

A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.