A nitride semiconductor laser device of one embodiment of the present disclosure includes a single-crystal substrate, a base layer, a sheet-shaped structure, a light emitting layer, and a resonator mirror. The single-crystal substrate extends in one direction. The base layer is provided on the single-crystal substrate and includes a nitride semiconductor. The sheet-shaped structure is provided on the base layer to stand in a direction perpendicular to the base layer. The sheet-shaped structure has an area of a side surface that is greater than an area of an upper surface. The side surface extends in a longitudinal direction of the single-crystal substrate. The sheet-shaped structure includes a nitride semiconductor. The light emitting layer is provided at least on the side surface of the sheet-shaped structure. The light emitting layer includes a nitride semiconductor. The resonator mirror is provided by a pair of end surfaces of the sheet-shaped structure that oppose each other in the longitudinal direction.

A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

A multi-junction laser-diode module includes (a) a multi-junction laser diode having a plurality of laser junctions stacked in a vertical dimension parallel to the fast-axes of the laser beams emitted by the laser junctions, (b) a fast-axis cylindrical lens collimating each laser beam in the fast axis, whereby the laser beams emerge from the fast-axis cylindrical lens with mutually nonparallel propagation directions, (c) a transmissive beam-deflecting element that deflects the laser beams in the fast-axis dimension after the fast-axis cylindrical lens to make their propagation directions parallel, and (d) a slow-axis cylindrical lens configured to collimate each laser beam in the slow axis. The transmissive beam-deflecting element corrects for the propagation-direction discrepancy between the laser beams, in the fast-axis dimension, caused by fast-axis collimation. The multi-junction laser-diode module can thereby produce a laser beam bundle suitable for high-brightness fiber-coupling.

A broad-spectrum laser for use in a MEMS laser scanning display device is provided. In one example, the broad-spectrum laser includes a laser diode emitter with plural quantum wells each having a different spectral peak. In another example, the broad-spectrum laser includes a laser diode emitter with a tunable absorber to achieve a broadened emissions spectrum. In another example, the broad-spectrum laser includes a laser diode emitter array having plural individual emitters with different spectral peaks.

The invention relates to an edge-emitting semiconductor laser comprising —at least two laser diodes, each of which is designed to generate electromagnetic radiation, wherein —the laser diodes are arranged on top of one another in a vertical direction, —the laser diodes are monolithically connected to one another, and —at least one frequency-stabilizing element is arranged in an end region of the laser diodes. The invention also relates to a method for producing an edge-emitting semiconductor laser.

A segmented VCSEL array having a plurality of individually addressable segments, each segment comprising one or more VCSELs. In some cases, at least two of the plurality of individually addressable segments may be driven in combination. The plurality of individually addressable segments, in some embodiments, may be centered around the same central point. An optical element may be used in conjunction with the segmented VCSEL array, and in some cases may be aligned to the central point. The optical element may be configured such that light passing therethrough may be directed according to which of the plurality of individually addressable segments is activated. In some embodiments, the optical element is a grating or diffractive optical element. The grating or diffractive optical element could be patterned with optical segments that each correspond to at least one the plurality of individually addressable segments.

An optoelectronic semiconductor component is specified, including at least one layer stack having - an active zone for generating electromagnetic radiation, - at least one aluminum-containing current constriction layer including a first region and a second region, the second region having a lower electrical conductivity than the first region, and - a side surface which laterally delimits the layer stack and at which the second region is arranged, the second region being an oxidized region. A method for producing an optoelectronic semiconductor component is furthermore specified.

The invention relates to an optoelectronic laser device which includes: a first set of edge-emitting laser diodes, the first set of edge-emitting laser diodes having one or more first laser diodes, each of which has a first light emission region for laser light on a side face, and a second set of edge-emitting laser diodes, the second set of edge-emitting laser diodes having one or more second laser diodes, each of which has a second laser emission region for laser light on a side face, wherein the side faces of the first and second laser diodes lie at least substantially in the same plane, wherein a particular second laser diode (21b, 21d, 21f) is allocated to a particular first laser diode, and wherein the light emission regions of the first and of the allocated second laser diode are arranged at a distance from each other which is smaller than 10 μm, preferably smaller than 5 μm, further preferably smaller than 3 μm, and even further preferably smaller than 2 μm.

Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide at least one strain compensation layer and efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.