A method of controlling a laser unit in order to negate heat build-up caused by a laser modulation current, and eliminating artifacts caused by image related thermal effects. Upon receipt of an activation signal, an activation current is applied which causes lasing of the laser unit. Upon receipt of a deactivation signal, the method ceases lasing by selectively applying either an idle current below the activation current, or a cooling current below the idle current.

A laser diode includes a semiconductor body having a substrate and a semiconductor layer sequence arranged on the substrate, which includes an active zone that generates electromagnetic radiation, wherein the semiconductor body has a first main surface and a second main surface opposite the first main surface and at least one first and second laser facet, which are respectively arranged transversely to the first and second main surfaces, and at least one structured facet region located at a transition between the first main surface and at least one of the first and second laser facets, and the structured facet region includes at least a strained compensation layer or a recess.

According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and a flexible substrate region (30d) of a plastic film (30) of a multilayer stack (100) are divided, the interface between the flexible substrate region (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (210). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (210). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate region (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the lift-off light includes forming the lift-off light from a plurality of arranged light sources and temporally and spatially modulating a power of the plurality of lift-off light sources according to a shape of the flexible substrate region of the synthetic resin film such that the irradiation intensity of the lift-off light for at least part of the interface between the intermediate region (30i) and the glass base (10) is lower than the irradiation intensity of the lift-off light for the interface between the flexible substrate region (30d) and the glass base (10).

A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

A semiconductor laser according to one embodiment of the present disclosure includes a semiconductor stack. The semiconductor stack includes, in the following order, a first cladding layer, an active layer, one or a plurality of low-concentration impurity layers, a contact layer, and a second cladding layer that includes a transparent conductive material. The semiconductor stack further has, in a portion including the contact layer, a ridge extending in a stacked in-plane direction. Each low-concentration impurity layer has an impurity concentration of 5.010.sup.17 cm.sup.3 or less, and a total thickness of the low-concentration impurity layer is 250 nm or more and 1000 nm or less. A distance between the second cladding layer and the low-concentration impurity layer closest to the second cladding layer is 150 nm or less.

A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.

According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and a flexible substrate region (30d) of a plastic film (30) of a multilayer stack (100) are divided, the interface between the flexible substrate region (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (210). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (210). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate region (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the lift-off light includes forming the lift-off light from a plurality of arranged light sources and temporally and spatially modulating a power of the plurality of lift-off light sources according to a shape of the flexible substrate region of the synthetic resin film such that the irradiation intensity of the lift-off light for at least part of the interface between the intermediate region (30i) and the glass base (10) is lower than the irradiation intensity of the lift-off light for the interface between the flexible substrate region (30d) and the glass base (10).

Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and a flexible substrate region (30d) of a plastic film (30) of a multilayer stack (100) are divided, the interface between the flexible substrate region (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (210). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (210). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate region (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the lift-off light includes forming the lift-off light from a plurality of arranged light sources and temporally and spatially modulating a power of the plurality of lift-off light sources according to a shape of the flexible substrate region of the synthetic resin film such that the irradiation intensity of the lift-off light for at least part of the interface between the intermediate region (30i) and the glass base (10) is lower than the irradiation intensity of the lift-off light for the interface between the flexible substrate region (30d) and the glass base (10).

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.