Patent classifications
H01S5/4056
Light emitting device
A light emitting device includes a base; a plurality of semiconductor laser elements disposed on the base and configured to emit light laterally from the plurality of semiconductor laser elements; a reflecting member disposed on the base and configured to reflect light from the semiconductor laser elements; a surrounding part disposed on the base and surrounding the semiconductor laser elements and the reflecting member; a wiring part disposed on the base so as to extend to a location outside of the surrounding part; a radiating body disposed on the surrounding part and having an opening; and a wavelength converting member that is located in the opening of the radiating body, the wavelength converting member being configured to convert a wavelength of light that is emitted from the plurality of semiconductor laser elements and reflected upward by the reflecting member.
LASER PACKAGE AND SYSTEM WITH LASER PACKAGES
A laser package is described, the laser package comprising a plurality of laser diodes separately attached to at least one sub-mount having respective connecting pads, wherein, during operation, each of the laser diodes emits light having a fast axis and a slow axis defining a fast axis plane and a slow axis plane, wherein the fast axis planes of all laser diodes are parallel to each other and the distance between the fast axis planes of at least two laser diodes is smaller than the lateral distance between these laser diodes. Furthermore, a system with at least two laser packages is described.
LIGHT EMITTING DEVICE
A light emitting device includes first and second semiconductor laser elements, a base, a surrounding part, a wavelength converting member, and first and second wiring parts. The first laser element, the converting member and the second laser element are arranged in order in a first direction. At least one of the first and second laser elements is disposed between the first and second wiring parts in a second direction perpendicular to the first direction. An outermost periphery of the converting member is between a first imaginary line and a second imaginary line in the top view. The first and second imaginary lines are both parallel to the second direction. The first imaginary line passes through an outermost periphery in the first direction of the second laser element and the second imaginary line passes through an outermost periphery in a direction opposite to the first direction of the first laser element.
Light emission device
A light emission device includes: a base part; a semiconductor laser device disposed on the base part; a frame body fixed to the base part and provided around the semiconductor laser device; a lid bonded to an upper surface of the frame body; and a first electrical conduction member bonded to an outer surface of the base part or an outer surface of the frame body, the first electrical conduction member having a first conductive region and a second conductive region that are electrically connected to the semiconductor laser device. In a top plan view, the first electrical conduction member includes a first portion overlapping the frame body and a second portion not overlapping the frame body, the first conductive region being contained in the first portion, and the second conductive region being contained in the second portion.
Light emitting device
A light emitting device includes: a substrate including a main surface; a first projection positioned on the main surface, the first projection including an upper surface and first and second lateral surfaces, wherein the first lateral surface of the first projection comprises a first reflective part, and the second lateral surface of the first projection comprises a second reflective part; a first laser element configured to irradiate laser light to the first reflective part; a second laser element configured to irradiate laser light to the second reflective part; and a first optical member fixed to the upper surface of the first projection, wherein the first optical member comprises a first lens part positioned above the first reflective part, and a second lens part positioned above the second reflective part.
METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, BONDING METHOD, AND LIGHT EMITTING DEVICE
A method for manufacturing a light emitting device includes: disposing a light emitting element on a base member; providing a bonding agent to the base member or a lid member; and bonding the base member on which the light emitting element is disposed and the lid member with the bonding agent by sandwiching the bonding agent in a molten state between the base member and the lid member, and pressing the lid member against the base member, increasing a distance between the base member and the lid member in a state in which the lid member is pressed against the base member, while maintaining a state in which the bonding agent contacts the base member and the lid member, and solidifying the bonding agent in a state in which the distance between the base member and the lid member is increased to bond the base member and the lid member.
MULTI-WAVELENGTH LASER DIODE
In some implementations, an optical device (e.g., a monolithic master oscillator power amplifier (MOPA) diode) may include a first facet, one or more gratings, an amplifier structure terminated with a second facet, and an oscillator array that includes multiple singlemode oscillators coupled to the first facet and to the one or more gratings. In some implementations, the multiple singlemode oscillators may be configured to generate multiple seed beams and to transmit the multiple seed beams into the amplifier structure through the one or more gratings.
RADIATION-EMITTING DEVICE
In at least one embodiment, the radiation-emitting device comprises a laser bar for emitting laser radiation. The device further includes a waveguide having a core, a cladding, an entry face, and an exit face. The device may include a heat sink having a mounting side where the waveguide is applied thereon, the cladding being arranged at least above and below the core in relation to the mounting side. The device may be configured so that, during operation, the laser radiation impinges on the entry face of the waveguide and passes from there into the core. The core may include a conversion element configured to convert the laser radiation into secondary radiation. The waveguide may be configured to guide the laser radiation and/or the secondary radiation inside the core as far as the exit face by reflection at the interface between the cladding and the core.
Light emitting device
A light emitting device includes one or more electrical components and a base member. The electrical components include a first semiconductor laser element, which has a light emission end surface. The base member has a first surface on which the first semiconductor laser element is disposed. The base member includes a plurality of metal films including a first metal film and a second metal film. The first metal film is electrically connected to at least one of the electrical components, and defines a first alignment mark for aligning the first semiconductor laser element. The second metal film is electrically connected to at least one of the electrical components, and defines a second alignment mark for aligning the first semiconductor laser element. A straight line connecting the first alignment mark and the second alignment mark extends parallel to the light emission end surface of the first semiconductor laser element.
Manufacturable multi-emitter laser diode
A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.