A system and method for tuning and infrared source laser in the Mid-IR wavelength range. The system and method comprising, at least, a plurality of individually tunable emitters, each emitter emitting a beam having a unique wavelength, a grating, a mirror positioned after the grating to receive at least one refracted order of light of at least one beam and to redirect the beam back towards the grating, and a micro-electro-mechanical systems device containing a plurality of adjustable micro-mirrors.

A semiconductor laser device includes: a semiconductor laser element; a lower base provided with the semiconductor laser element; an upper base that is electrically insulated from the lower base, and sandwiches the semiconductor laser element together with the lower base; a lens that allows laser light that has exited from semiconductor laser element to enter, concentrates the laser light that has entered, and allows the laser light that has been concentrated to exit; and a holder that holds the lens. The holder is connected to the upper base.

Various technologies described herein pertain to injection locking on-chip laser(s) and external on-chip resonator(s). A system includes a first integrated circuit chip and a second integrated circuit chip. The first integrated circuit chip and the second integrated circuit chip are separate integrated circuit chips and can be optically coupled to each other. The first integrated circuit chip includes a laser configured to emit light via a first path and a second path. The second integrated circuit chip includes a resonator formed of an electrooptic material. The resonator can receive the light emitted by the laser of the first integrated circuit chip via the first path and return feedback light to the laser of the first integrated circuit chip via the first path. The feedback light can cause injection locking of the laser to the resonator to control the light emitted by the laser (e.g., via the first and second paths).

A semiconductor laser device includes: a plurality of semiconductor laser elements which emit laser beams with different wavelengths; a plurality of lens portions which collimate the laser beams; a wavelength dispersion element on which the laser beams are incident at different angles, and which changes the traveling directions of the incident laser beams according to the wavelengths to generate an emitted beam that is a combined beam of the laser beams; a plurality of first reflective surfaces which cause the laser beams to be incident on the wavelength dispersion element at the angles corresponding to the laser beams; and a plurality of second reflective surfaces which guide the laser beams to the plurality of first reflective surfaces.

Disclosed are a design method, a product and an application of a high-repetition-frequency and multi-wavelength ultrashort pulse mode-locked photonic integrated chip. Components for designing the mode-locked photonic integrated chip include a semiconductor optical amplifier array providing gains for N wavelength channels; a phase delay line array which includes phase delay lines with different lengths and separately compensates for different effective optical path differences of gain light of the wavelength channels caused by a dispersion effect; a flattened arrayed waveguide grating multiplexing the gain light with the effective optical path differences compensated, and multiplexing N-channel optical pulse signals into one-channel optical pulse signal; a saturable absorber forming, with the arrayed waveguide grating, N individual and synchronized different wavelength mode-locked optical pulse channels; and a semiconductor optical amplifier used for gaining and outputting an output pulse of the saturable absorber.

A laser array (100) is described herein, wherein the laser array comprises semiconductor lasers (102, 104) that are precisely controlled such that an optical beam output by the laser array has desired shape and direction.

In various embodiments, laser devices include a thermal bonding layer featuring an array of carbon nanotubes and at least one metallic thermal bonding material.

The invention may be embodied in other forms than those specifically disclosed herein without departing from itMulti-kW-class blue (400-495 nm) fiber-delivered lasers and module configurations. In embodiments, the lasers propagate laser beams having beam parameter products of <5 mm*mrad, which are used in materials processing, welding and pumping a Raman laser. In an embodiment the laser system is an integration of fiber-coupled modules, which are in turn made up of submodules. An embodiment has sub-modules having a plurality of lensed blue semiconductor gain chips with low reflectivity front facets. These are locked in wavelength with a wavelength spread of <1 nm by using volume Bragg gratings in an external cavity configuration. An embodiment has modules having of a plurality of submodules, which are combined through wavelength multiplexing with a bandwidth of <10 nm, followed by polarization beam combining. The output of each module is fiber-coupled into a low NA fiber. In an embodiment a kW-level blue laser system is realized by fiber bundling and combining multiple modules into a single output fiber.

A laser assembly (1710) for generating an assembly output beam (1712) includes a laser subassembly (1716) including a first laser module (1716A) and a second laser module (1716B), a transform assembly (1744), and a beam combiner (1746). The first laser module (1716A) emits a plurality of spaced apart first laser beams (1720A). The second laser module (1716B) emits a plurality of spaced apart second laser beams (1720B). The transform assembly (1744) is positioned in a path of the laser beams (1720A) (1720B). The transform assembly (1744) directs the laser beams (1720A) (1720B) to spatially overlap at a focal plane of the transform assembly (1744). The beam combiner (1746) is positioned at the focal plane that combines the lasers beams (1720A) (1720B) to provide a combination beam. The laser beams (1720A) (1720B) directed by the transform assembly (1744) impinge on the beam combiner (1746) at different angles.

In various embodiments, laser devices feature means, such as fasteners, for attaching a laser package to a cooling plate, which allow motion of the laser package in response to thermal cycles resulting from operation of a beam emitter therewithin. Embodiments of the invention additionally or instead include laser devices featuring segmented barrier layers for electrically isolating the laser package from the cooling plate.