A polarization control member includes a first dichroic mirror having a first incident face, a second dichroic mirror joined to the first dichroic mirror, the second dichroic mirror having a second incident face, and a waveplate joined to the first incident face of the first dichroic mirror.

A light-emitting device includes: a base including a mount surface, and a lateral wall located around the mount surface, the lateral wall having a first upper surface and a second upper surface located at different heights from the mount surface; one or more light-emitting elements mounted on the mount surface of the base; a light-receiving element configured to receive a portion of light emitted from the one or more light-emitting elements; a first light-transmissive member bonded to the first upper surface and sealing a space in which the light-emitting elements are mounted; and a second light-transmissive member bonded to the second upper surface and supporting the light-receiving element.

A light emitting device includes a first semiconductor laser element, a light reflecting member, a base member, and a wire. The base member includes a frame part forming a frame. The frame part has a step portion inside of the frame, a bonding surface bonded to the bottom part, a first inner surface extending below the bonding surface, a second inner surface extending above the bonding surface, a first planar surface defining a planar surface of the step portion on an upper surface side, and a first electrode layer and a second electrode layer electrically connected to each other. The second electrode layer is disposed on the first planar surface. The wire is bonded to the second electrode layer and electrically connected to the first semiconductor laser element. A width of the bonding surface is greater on a first planar surface side than on an opposite side.

A semiconductor laser device is specified, the semiconductor laser device comprising an active layer having a main extension plane, a first cladding layer and a second cladding layer, the active layer being arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, a photonic crystal layer arranged in the first cladding layer or in the second cladding layer, and an integrated optical element directly fixed to the light-outcoupling surface. Furthermore, a method for manufacturing a semiconductor laser device and a projection device are specified.

A photodetector is positioned so that imaginary lines perpendicular to an emission end surface of a first light-emitting element through first and second points, respectively, pass through the photodetector. The first and second points are two points at which an imaginary line parallel to the emission end surface through an inside of an outer edge of the first light-emitting element intersects the outer edge of the first light-emitting element in a top view. At least a part of a first wiring region is arranged in a first region between imaginary lines perpendicular to the emission end surface through third and fourth points, respectively. The third and fourth points are two points at which an imaginary line parallel to the emission end surface through an inside of an outer edge of the photodetector intersects the outer edge of the photodetector in the top view.

A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.

According to one embodiment, an illumination device includes a light guide including an upper surface, a lower surface and a light entering surface, a first light emitting portion, a second light emitting portion, and a third light emitting portion. A first surface, a second surface, a third surface and a fourth surface of the upper surface are arranged in this order in a first direction. A width of the first surface is less than a width of the second surface, and the width of the second surface is less than a width of the third surface. An angle between the light entering surface and the first surface is an acute angle. The first light emitting portion, the second light emitting portion and the third light emitting portion face the light entering surface.

Embodiments of the present disclosure provide a laser array, a laser source, and a laser projection device, and relate to the field of laser display technologies. The laser array includes a light emitting portion for emitting a laser light beam; a light transmitting portion disposed along a light emitting direction of the light emitting portion for transmitting the laser light beam; where the light transmitting portion includes a first light transmitting region and a second light transmitting region, the first light transmitting region and the second light transmitting region are disposed such that light beams transmitting through the two regions have different polarization directions, which can reduce coherence of the laser light beam emitted from the laser array, thereby facilitating elimination of a speckle.

The embodiment relates to a light-emitting device in which a positional relationship between a modified refractive index region's gravity-center position and the associated lattice point differs from a conventional device, and a production method. In this device, a stacked body including a light-emitting portion and a phase modulation layer optically coupled to the light-emitting portion is on a substrate. The phase modulation layer includes a base layer and plural modified refractive index regions in the base layer. Each modified refractive index region's gravity-center position locates on a virtual straight line passing through a corresponding reference lattice point among lattice points of a virtual square lattice on the base layer's design plane. A distance between the reference lattice point and the modified refractive index region's gravity center along the virtual straight line is individually set such that this device outputs light forming an optical image.

A light emitting module includes: a first light emitting device including: a first package, a plurality of first semiconductor laser elements mounted in the first package, and a first lens member having lens portions, a number of the lens portion is the same as a number of the first semiconductor laser elements; and a second light emitting device including: a second package, a plurality of second semiconductor laser elements mounted in the second package, wherein a quantity of the second semiconductor laser elements is fewer than a quantity of the first semiconductor laser elements, and a second lens member which is structured the same as the first lens member; and one or more mounting substrates in which the first light emitting device and the second light emitting device are mounted.