A system and method (10) for heating objects (O) during a thermal treatment process in a production line (P) is described. The system (10) comprises a transport system (11), a minor arrangement (201, 202, 203, 204, 205, 206) comprising a first mirror surface (21, 21′, 21″) and a second minor surface (22, 22′, 22″) arranged at opposite sides, so that the objects (O) may be transported between the minor surfaces (21, 22, 21′, 22′, 21″, 22″) along the production line and a radiation device (30) comprising a number of lasers for generating light (L). The radiation device (30) and the mirror arrangement (201, 202, 203, 204, 205, 206) are constructed such that the main direction (R) of light (L) that enters the mirror arrangement (201, 202, 203, 204, 205, 206) is directed towards the first mirror surface (21, 21′, 21″) at an angle to the production line (P), and the light (L) subsequently undergoes multiple reflections between the mirror surfaces (21, 22, 21′, 22′, 21″, 22″) so that a series of multiple reflections of the light (L) travels in the transport direction (OT) along at least a section of the minor surface (21, 22, 21′, 22′, 21″, 22″) or travels against the transport direction (OT) along at least a section of the minor surface (21, 22, 21′, 22′, 21″, 22″) and heats the objects (O) being transported between the minor surfaces (21, 22, 21′, 22′, 21″, 22″).

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

In various embodiments, multiple laser emitters are helically arranged around a central axis and emit their individual beams toward the central axis. A collection of mirrors is disposed at the central axis, and each mirror is angled so that the reflected beams all exit the helical stack, in parallel and vertically stacked, in the same direction toward a shared exit point.

An optoelectronic device includes a carrier substrate, with a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first dielectric and semiconductor layers. A set of epitaxial layers is disposed over the lower DBR, wherein the set of epitaxial layers includes one or more III-V semiconductor materials and defines a quantum well structure and a confinement layer. An upper DBR stack is disposed over the set of epitaxial layers and includes alternating second dielectric and semiconductor layers. Electrodes are coupled to apply an excitation current to the quantum well structure.

A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.

A light emitting element array includes: plural light emitting elements, in which, among polarization components of light emitted by the light emitting element capable of causing interference of emitted light, light intensity of a polarization component of light in a second direction intersecting with a first direction in which light emitting elements capable of causing the interference of the light are arranged is smaller than light intensity of a polarization component in the first direction.

A method of fabricating a Vertical Cavity Surface Emitting Laser(VCSEL) device includes providing a first structure comprising a VCSEL layer structure on a wafer. The first structure has a non-planar first structure top surface with varying height levels and includes one or more electrical contact areas. The method further includes applying one or more layers of cover material on the non-planar first structure top surface with a thickness such that a lowest height level of a cover material top surface is equal to or above the highest height level of the non-planar first structure top surface, to obtain a second structure having a second structure top surface, planarizing the second structure top surface, and producing one or more first electrical vias from the second structure top surface through the one or more layers of cover material for electrical connection to the one or more electrical contact areas.

An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.

Techniques for reducing the risk for an unsafe eye condition associated with light sources. In an example, a light source package is described. The light source package includes a package body defining an interior volume and including an opening. The package also includes a light source contained inside the interior volume of the package body. The package also includes an optical element that occupies at least a portion of the opening of the package body. An electrically conductive material is disposed over a surface of the optical element. This material may be electrically coupled with a system. The system accesses an electrical parameter of the material, determines a damage associated with the optical element based on the electrical parameter, and initiates a corrective action associated with the light source based on the damage.