A light-emitting device includes a light-emitting unit. The light-emitting unit includes an array of multiple light-emitting element groups, each including multiple light-emitting elements. In the light-emitting unit, the multiple light-emitting element groups are sequentially driven along the array such that, for each of the multiple light-emitting element groups, the multiple light-emitting elements included in the light-emitting element group are concurrently set to a state of emitting light or a state of not emitting light.

A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

A laser array includes a plurality of laser emitters arranged in a plurality of rows and a plurality of columns on a substrate that is non-native to the plurality of laser emitters, and a plurality of driver transistors on the substrate adjacent one or more of the laser diodes. A subset of the plurality of laser emitters includes a string of laser emitters that are connected such that an anode of at least one laser emitter of the subset is connected to a cathode of an adjacent laser emitter of the subset. A driver transistor of the plurality of driver transistors is configured to control a current flowing through the string.

A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.

A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.

This invention opens up the chip thickness for increasing VCSEL power. It describes a method by using multiple gain layers 10, separated by insulating layers 11, powered in parallel electrically through embedded electrodes 13, 14 connected through via holes. The gain layers, as a whole, are bounded on top and bottom by DBR mirrors 12. The structure, compared to a standard VCSEL, leads to higher power, lower resistive loss, higher device speed, higher beam quality, and fewer number of DBR layers.

A surface emitting laser element array includes multiple two-dimensionally arranged surface-emitting laser element groups each including multiple surface-emitting laser elements. The multiple surface-emitting laser element groups are drivable independently of each other. The multiple surface-emitting laser element groups are arranged in an arrangement region such that the number of surface-emitting laser element groups arranged in a first direction is larger than the number of surface-emitting laser element groups arranged in a second direction perpendicular to the first direction. An irradiation region irradiated with light emitted from the multiple surface-emitting laser element groups has a shape elongated in the first direction. The arrangement region in which the multiple surface-emitting laser element groups are arranged has an aspect ratio closer to 1:1 than the irradiation region.

System and method for utilizing a serial array (10) of large laser cores (11), positioned inside an external cavity formed with full reflection mirrors (12) and a partial reflection mirror (13), containing a mode-selection mechanism, based on a seeding laser (14), a Fabry-Perot (16), and an isolator (15), for ensuring only the axial wave (17) can exist, generating correspondingly an output beam (18) of high power as well high beam quality.

A compact, low cost vcsel projector for high performance stereodepth camera is disclosed. An example apparatus includes an array of vertical cavity surface emitting lasers (VCSELs); an array of micro-lenses coupled to the array of VCSELs, centerlines of ones of the micro-lenses offset relative to centerlines of respective ones of the VCSELs; and a projection lens coupled to the array of micro-lenses.

A light-emitting device includes a light-emitting unit. The light-emitting unit includes an array of multiple light-emitting element groups, each including multiple light-emitting elements. In the light-emitting unit, the multiple light-emitting element groups are sequentially driven along the array such that, for each of the multiple light-emitting element groups, the multiple light-emitting elements included in the light-emitting element group are concurrently set to a state of emitting light or a state of not emitting light.