H03B5/366

DRIFT COMPENSATION

The present disclosure relates to an electronic device comprising a first capacitor and a quartz crystal coupled in series between a first node and a second node; an inverter coupled between the first and second nodes; a first variable capacitor coupled between the first node and a third node; and a second variable capacitor coupled between the second node and the third node.

Temperature compensated oscillator driver

A circuit includes an oscillator having a driver and a resonator. The driver receives a supply voltage at a supply input and provides a drive output to drive the resonator to generate an oscillator output signal. A power converter receives an input voltage and generates the supply voltage to the supply input of the driver. A temperature tracking device in the power converter controls the voltage level of the supply voltage to the supply input of the driver based on temperature such that the supply voltage varies inversely to the temperature of the circuit.

Oscillator, electronic device, and vehicle
11012031 · 2021-05-18 · ·

An oscillator includes a resonator and an integrated circuit, the integrated circuit includes an oscillation circuit that oscillates the resonator, a temperature sensor, a temperature compensation circuit that compensates for temperature characteristics of the resonator based on an output signal of the temperature sensor, an output circuit that receives a signal output from the oscillation circuit and outputs an oscillation signal, and a heat generating circuit, and in the heat generating circuit, a current flows in a first period after supply of a power supply voltage from the outside is started to generate heat and no current flows in the second period after the first period ends.

VIBRATION DEVICE
20210098680 · 2021-04-01 ·

A vibration device includes a semiconductor substrate having a first surface and a second surface in an obverse-reverse relationship, a vibration element disposed on the first surface, a lid bonded to the first surface, an integrated circuit disposed on the first surface, a terminal disposed on the second surface, a through electrode which penetrates the semiconductor substrate, and is configured to electrically couple the terminal and the integrated circuit to each other, and a first capacitor which is provided with a first recess provided to the semiconductor substrate and opening in the first surface, an insulating film disposed on an inside surface of the first recess, and an electrically-conductive material filling the first recess, and has a first capacitance between the electrically-conductive material and the semiconductor substrate, wherein the electrically-conductive material does not have contact with the terminal at the second surface side.

Circuit device, oscillator, electronic apparatus, and vehicle
10978995 · 2021-04-13 · ·

Provided is a circuit device including: a first terminal electrically coupled to one end of a vibrator; a second terminal electrically coupled to the other end of the vibrator; an oscillation circuit electrically coupled to the first terminal and the second terminal, and oscillating the vibrator; a third terminal to which an external input signal is input; a switch circuit provided between a first wiring which couples the first terminal and the oscillation circuit with each other and the third terminal, and having a P-type transistor; and a control circuit outputting a regulated voltage, in which a power supply voltage is regulated, as a substrate voltage of the P-type transistor.

Circuit device, oscillator, electronic apparatus, and vehicle
10985697 · 2021-04-20 · ·

Provided is a circuit device including: an oscillation circuit oscillating a vibrator, in which the oscillation circuit includes a variable capacitance circuit having a first variable capacitance element and a second variable capacitance element constituted by a first transistor and a second transistor, and a reference voltage supply circuit. The first reference voltage is supplied to a first gate of the first transistor and a capacitance control voltage is supplied to a first impurity region of the first transistor, the second reference voltage is supplied to a second gate of the second transistor and the capacitance control voltage is supplied to a second impurity region of the second transistor, and the capacitance control voltage is supplied to a first common impurity region of the first transistor and the second transistor.

Crystal oscillator circuit and method for starting up a crystal oscillator
10965249 · 2021-03-30 · ·

A crystal oscillator circuit comprises: a crystal oscillator; and an injection frequency generating circuit, the injection frequency generating circuit being configured to sense a signal of the crystal oscillator and amplify the sensed signal, the injection frequency generating circuit being further configured to inject the amplified signal to the crystal oscillator; wherein the crystal oscillator circuit is configured such that the crystal oscillator receives the amplified signal during an initial start-up period of the crystal oscillator and stops receiving the amplified signal at an end of the initial start-up period.

Temperature compensation of a quartz crystal oscillator

A quartz crystal resonator is coupled to an electronic circuit. A capacitive or resistive element is provided for adjusting a frequency of the quartz crystal resonator on activation or deactivation of a function of a circuit. Control is made according to a model of an expected variation of a temperature of the quartz crystal resonator.

Pullable clock oscillator

A clock oscillator includes with a pullable BAW oscillator to generate an output signal with a target frequency. The BAW oscillator is based on a BAW resonator and voltage-controlled variable load capacitance, responsive to a capacitance control signal to provide a selectable load capacitance. An oscillator driver (such as a differential negative gm transconductance amplifier), is coupled to the BAW oscillator to provide an oscillation drive signal. The BAW oscillator is responsive to the oscillation drive signal to generate the output signal with a frequency based on the selectable load capacitance. The oscillator driver can include a bandpass filter network with a resonance frequency substantially at the target frequency.

SEMICONDUCTOR DEVICE AND METHOD FOR CONTROLLING AMPLITUDE OF SIGNAL IN THE SEMICONDUCTOR DEVICE

A semiconductor device and a method for controlling amplitude of signal in the semiconductor device are provided. The semiconductor device comprises a signal generator configured to output a sinewave, a comparator configured to compare a magnitude of the sinewave with a magnitude of a reference signal at a first timing corresponding to a timing control signal and to output a comparison result, and a control signal adjustor configured to adjust one of the current control signal and a timing control signal depending on the comparison result of the comparator.