Provided is a load modulation amplifier including: a high frequency circuit board; and on the board, an input distribution circuit unit (DC) including: a distributor for dividing one input signal into two signals IS1 and IS2; and a phase delay circuit formed on a signal line for the divided IS2; a carrier amplifier (CA) including a first high frequency transistor for amplifying the IS1; a peak amplifier (PA) including a second high frequency transistor and for amplifying the IS2; and an output combination circuit (OCCU) including: a 90-degree phase delay circuit (90DC) formed on a signal line for output of the CA; a combiner for combining output of the 90DC and output of the PA; and an impedance conversion circuit for converting an output impedance of the combiner. The CA and the PA are directly connected to the OCCU without converting an output impedance.

Provided is a load modulation amplifier including: a high frequency circuit board; and on the board, an input distribution circuit unit (DC) including: a distributor for dividing one input signal into two signals IS1 and IS2; and a phase delay circuit formed on a signal line for the divided IS2; a carrier amplifier (CA) including a first high frequency transistor for amplifying the IS1; a peak amplifier (PA) including a second high frequency transistor and for amplifying the IS2; and an output combination circuit (OCCU) including: a 90-degree phase delay circuit (90DC) formed on a signal line for output of the CA; a combiner for combining output of the 90DC and output of the PA; and an impedance conversion circuit for converting an output impedance of the combiner. The CA and the PA are directly connected to the OCCU without converting an output impedance.

A radio-frequency power amplifier device includes: a carrier amplifier semiconductor device and a peak amplifier semiconductor device on a multilayer submount substrate; a bias power supply semiconductor device; second radio-frequency signal wiring that transmits a radio-frequency signal to the carrier amplifier semiconductor device and the peak amplifier semiconductor device; and carrier-amplifier bias power supply wiring that is wired in a third wiring layer and supplies a bias power supply voltage. The second radio-frequency signal wiring and the carrier-amplifier bias power supply wiring intersect in a plan view. The radio-frequency power amplifier device includes: a shield pattern that is located in a second wiring layer between a first wiring layer and the third wiring layer; and one or more connection vias disposed in an extension direction of the carrier-amplifier bias power supply wiring. The one or more connection vias are connected to the shield pattern.

A transistor package for a power amplifier is provided. The transistor package includes a plurality of radio frequency, RF, paths that includes a first RF path and second RF path. Each RF path includes a transistor-carrying die and at least one impedance element. The transistor package includes a circuit portion electrically coupling a first impedance element in the first RF path to a second impedance element in the second RF path where the circuit portion includes at least one resistor.

A Doherty amplifier including a main amplifier and a peak amplifier is mounted on a package substrate. A low noise amplifier is further mounted on the package substrate. A transmit/receive switch switches in terms of time between a transmission connection state in which an output signal of the Doherty amplifier is supplied to an antenna and a reception connection state in which a signal received by the antenna is inputted to the low noise amplifier.

An amplification unit contains two or more sets containing a plurality of amplification circuits, and amplifies power of an RF (Radio Frequency) signal. A combining unit contains two or more combiners corresponding to the two or more sets, combines RF signals output by the amplification circuits, and outputs a resultant RF signal. The amplification unit has one chassis storing each amplification circuit. The amplification unit and the combining unit have two or more connectors which are arranged transversely. The amplification unit and the combining unit are attachable/detachable.

An amplification unit contains two or more sets containing a plurality of amplification circuits, and amplifies power of an RF (Radio Frequency) signal. A combining unit contains two or more combiners corresponding to the two or more sets, combines RF signals output by the amplification circuits, and outputs a resultant RF signal. The amplification unit has one chassis storing each amplification circuit. The amplification unit and the combining unit have two or more connectors which are arranged transversely. The amplification unit and the combining unit are attachable/detachable.

An embodiment of a module (e.g., an amplifier module) includes a substrate, a transmission line, and a ground plane height variation structure. The substrate is formed from a plurality of dielectric material layers, and has a mounting surface and a second surface opposite the mounting surface. A plurality of non-overlapping zones is defined at the mounting surface. The transmission line is coupled to the substrate and is located within a first zone of the plurality of non-overlapping zones. The ground plane height variation structure extends from the second surface into the substrate within the first zone. The ground plane height variation structure underlies the transmission line, a portion of the substrate is present between the upper boundary and the transmission line, and the ground plane height variation structure includes a conductive path between an upper boundary of the ground plane height variation structure and the second surface.

A Digital Power-Amplifier (DPA) system includes a power amplifier (PA) circuit having control inputs and an output for generating output signals, and an adaptive control circuit that comprises an input interface, an output interface, a memory storing an adaptive control algorithm and a processor performing instructions based on the adaptive control algorithm in connection with the memory, wherein the input interface receives input-state signals and output signals of the DPA circuit, wherein the adaptive control algorithm determines, in response to the input-state signals and the output signals, control parameters of control signals transmitted to the control inputs from the output interface for controlling operations of the DPA circuit.

A power combiner for an outphasing amplifier system comprises an output terminal, a first input terminal, a first inductor, and a first capacitor, wherein the first input terminal is connected to ground via the first inductor and the first input terminal is connected to the output terminal via the first capacitor. The power combiner further comprises a second input terminal, a second capacitor, and a second inductor, wherein the second input terminal is connected to ground via the second capacitor and the second input terminal is connected to the output terminal via the second inductor. The first capacitor can have a same capacitance as the second capacitor and the first inductor has a same inductance as the second inductor.