Multi-band device having multiple miniaturized single-band power amplifiers. In some embodiments, a power amplifier die can include a semiconductor substrate, and a plurality of power amplifiers (PAs) implemented on the semiconductor substrate. Each PA can be configured to drive approximately a characteristic load impedance of a downstream component along an individual frequency band signal path, such that each PA is sized smaller than a wide band PA configured to drive more than one of the frequency bands associated with the plurality of PAs. The downstream component can include an output filter.

A scalable periphery tunable matching power amplifier is presented. Varying power levels can be accommodated by selectively activating or deactivating unit cells of which the scalable periphery tunable matching power amplifier is comprised. Tunable matching allows individual unit cells to see a constant output impedance, reducing need for transforming a low impedance up to a system impedance and attendant power loss. The scalable periphery tunable matching power amplifier can also be tuned for different operating conditions such as different frequencies of operation or different modes.

An apparatus includes a first plurality of low noise amplifiers (LNAs) and a cascaded switch configured to route outputs of the first plurality of LNAs to a second plurality of LNAs.

A surface acoustic wave (SAW) filter that receives an aggregate circuit and outputs two or more sub-signals on outputs each of a different frequency band. The sub-signals are amplified by low noise amplifiers and, in one implementation, the amplified sub-signals can be summed. The outputs are connected via a switched passive network so that portions of the sub-signals on the outputs that are not in the selected frequency band are at least partially terminated.

A broadband digital beam forming system comprises a set of Q pre-processing modules, Q being an integer greater than or equal to 2, and a set of M digital beam forming modules in communication with the Q preprocessing modules. Each of the Q preprocessing modules receives a respective one of Q broadband input signal streams and outputs M narrowband signal streams, M being an integer greater than or equal to 2. The total number of narrowband signal streams outputted by the Q pre-processing modules is Q times M. Each of the M digital beam forming modules receives corresponding Q narrowband signal streams of the Q times M narrowband signal streams, and outputs R beam signals, R being an integer greater than or equal to 1. The system further comprises a set of R post-processing modules in communication with the M digital beam forming modules. Each of the R post-processing modules receives M beam signals, each of the M beam signals being a corresponding one of the R beam signals from each of the M digital beam forming modules, and outputs a corresponding broadband output signal.

Radio-frequency (RF) amplifier having active gain bypass circuit. In some embodiments, an amplifier can include a first amplification path implemented to amplify a signal, and having a cascode arrangement of a first input transistor and a cascode transistor to provide a first gain for the signal when in a first mode. The amplifier can further include a second amplification path implemented to provide a second gain for the signal while bypassing at least a portion of the first amplification path when in a second mode. The second amplification path can include a cascode arrangement of a second input transistor and the cascode transistor shared with the first amplification path. The amplifier can further include a switch configured to allow routing of the signal through the first amplification path in the first mode or the second amplification path in the second mode.

Aspects of this disclosure relate to a cascode circuit electrically coupled between an amplifier configured to amplify a radio frequency (RF) signal and different loads. The cascode circuit can function as a switch to selectively provide an output from the amplifier to a number of different loads. In certain embodiments, the cascode circuit can be electrically coupled between different stages of a multi-stage power amplifier. For instance, the amplifier can be a first stage of the multi-stage power amplifier and the different loads can include different power amplifier transistors of a second stage of the multi-stage amplifier. The cascode circuit can be implemented by bipolar transistors according to certain embodiments.

A power amplifier die includes a semiconductor substrate, a power amplifier implemented on the semiconductor substrate, a radio-frequency input configured to receive a radio-frequency input signal having a radio-frequency component and a DC bias component, a bias circuit implemented on the semiconductor substrate, the bias circuit coupled to the power amplifier, and a bias tee circuit implemented on the semiconductor substrate, the bias tee circuit configured to receive the radio-frequency input signal and pass at least a portion of the DC component to the bias circuit and at least a portion of the radio-frequency component to the power amplifier.

An embodiment described herein includes a low noise amplifier (LNA) including a plurality of separate input terminals, a plurality of transistors, and an output network coupled to a first reference terminal and a single output of the LNA. Each transistor includes a conduction path and a control terminal coupled to one of the plurality of separate input terminals. The output network is also coupled to the conduction path of each of the plurality of transistors.

A power amplification system comprises a pre-processor including a wavefront multiplexer, a set of power amplifiers, and a post-processor including a wavefront demultiplexer. The wavefront multiplexer receives concurrently N input signals, N being an integer greater than 2, performs a wavefront multiplexing transform on the N input signals by attaching N wavefronts to the N input signals respectively, and generates N first output signals. The N wavefronts are unique and mutually orthogonal. The wavefront multiplexing transform has an inverse. The N power amplifiers amplify the N first output signals and generate N amplified signals. The wavefront demultiplexer performs the inverse of the wavefront multiplexing transform on the N amplified signals and generates N second output signals, the N second output signals corresponding respectively to the N input signals. Each of the N second output signals is an amplified version of a corresponding one of the N input signals.