A multiple-stage amplifier includes a driver stage die and a final stage die. The driver stage die includes a first type of semiconductor substrate (e.g., a silicon substrate), a first transistor, and an integrated portion of an interstage impedance matching circuit. A control terminal of the first transistor is electrically coupled to an RF signal input terminal of the driver stage die, and the integrated portion of the interstage impedance matching circuit is electrically coupled between a current-carrying terminal of the first transistor and an RF signal output terminal of the driver stage die. The second die includes a III-V semiconductor substrate (e.g., a GaN substrate) and a second transistor. A connection, which is a non-integrated portion of the interstage impedance matching circuit, is electrically coupled between the RF signal output terminal of the driver stage die and an RF signal input terminal of the final stage die.

Embodiments of the present invention provide a power amplifier, a radio remote unit RRU, and a base station. A multiphase pulse width modulator performs modulation to generate N multiphase pulse-width modulation PWM signals. The multiphase pulse-width modulation PWMn signal may be amplified. The multiphase pulse-width modulation PWMn signal may be filtered and a combination may be performed at a drain or a collector of a power amplifier transistor. According to the new radio frequency amplifier in accordance with the disclosure, envelope feeding loop inductance can be effectively reduced, so that video bandwidth is increased and DPD correction performance is improved.

A receiver circuit is disclosed. The receiver circuit includes an amplifier configured to generate an RF signal based on a received signal, where the RF signal includes an information signal and a blocker signal modulating an RF carrier frequency. The receiver circuit also includes an RF filter connected to the amplifier, where the RF filter is configured to selectively attenuate the blocker signal.

A multiple-stage amplifier includes a driver stage die and a final stage die. The driver stage die includes a first type of semiconductor substrate (e.g., a silicon substrate), a first transistor, and an integrated portion of an interstage impedance matching circuit. A control terminal of the first transistor is electrically coupled to an RF signal input terminal of the driver stage die, and the integrated portion of the interstage impedance matching circuit is electrically coupled between a current-carrying terminal of the first transistor and an RF signal output terminal of the driver stage die. The second die includes a III-V semiconductor substrate (e.g., a GaN substrate) and a second transistor. A connection, which is a non-integrated portion of the interstage impedance matching circuit, is electrically coupled between the RF signal output terminal of the driver stage die and an RF signal input terminal of the final stage die.

A power amplifier circuit amplifies a radio-frequency signal in a transmit frequency band. The power amplifier circuit includes an amplifier, a bias circuit, and an impedance circuit. The amplifier amplifies power of a radio-frequency signal and outputs an amplified signal. The impedance circuit is connected between a signal input terminal of the amplifier and a bias-current output terminal of the bias circuit and has frequency characteristics in which attenuation is obtained in the transmit frequency band. The impedance circuit includes first and second impedance circuits. The first impedance circuit is connected to the signal input terminal. The second impedance circuit is connected between the first impedance circuit and the bias-current output terminal.

An RF module includes a switch IC having connection electrodes on a first main face and connection electrodes on a second main face; a mounting substrate which has a first mounting face at the first main face side and a second mounting face at the second main face side and in which the switch IC is mounted; signal lines for a band A, which are formed at the first mounting face side of the mounting substrate; signal lines for a band B, which are formed at the second mounting face side of the mounting substrate; a band A filter; and a band B filter. Among the band A filter and the band B filter, only the band A filter is mounted on the first mounting face and only the band B filter is mounted on the second mounting face.

The present disclosure provides a power amplifier circuit capable of suppressing the occurrence of noises while enabling control of an output power level. The power amplifier circuit includes a first transistor that amplifies a first signal; a bias circuit that supplies a bias current or voltage based on a control signal to the first transistor; a second transistor to which a control current based on the control signal is supplied, which has an emitter or a source thereof connected to a collector or a drain of the first transistor, and from which a second signal obtained by amplifying the first signal is output; and a first feedback circuit provided between the collector or the drain of the second transistor and the base or the gate of the second transistor.

A multiple-stage amplifier includes a driver stage die and a final stage die. The driver stage die includes a first type of semiconductor substrate (e.g., a silicon substrate), a first transistor, and an integrated portion of an interstage impedance matching circuit. A control terminal of the first transistor is electrically coupled to an RF signal input terminal of the driver stage die, and the integrated portion of the interstage impedance matching circuit is electrically coupled between a current-carrying terminal of the first transistor and an RF signal output terminal of the driver stage die. The second die includes a III-V semiconductor substrate (e.g., a GaN substrate) and a second transistor. A connection, which is a non-integrated portion of the interstage impedance matching circuit, is electrically coupled between the RF signal output terminal of the driver stage die and an RF signal input terminal of the final stage die.

An amplifier circuit for a parametric transducer, comprising: a signal processor for processing an input signal into first and second signals; and at least a pair of output stages arranged to respectively receive the first and second signals for generating amplified first and second signals respectively, which are provided to operate the parametric transducer. The input, first and second signals are arranged with a substantially similar frequency to cause a switching frequency of the amplifier circuit to be matched to a carrier frequency of the parametric transducer. A related audio device is also disclosed.

Diversity receiver front end systems with fixed impedance matching circuits to improve signal processing. The fixed impedance matching circuits can be configured to reduce out-of-band metrics such as noise figure and/or gain for a plurality of out-of-band frequency bands while reducing or not increasing above a certain threshold an in-band metric for the associated in-band frequency band. Each of a plurality of paths through the front-end systems can include fixed impedance matching circuits that accomplish this tuning to improve performance for the front-end systems.