A gate bias circuit for a plurality of GaAs amplifier stages is a transistor coupled to a temperature compensation current received from a CMOS control stage. A plurality of pHEMPT amplifier stages are coupled to the gate bias circuit and to a control voltage which switches the amplifier stage. A selectively controlled stage pass transistor enables a current mirror between the gate bias circuit and each stage amplifying transistor. The penultimate pHEMPT amplifier stage is coupled to a CMOS amplifier. A CMOS circuit provides both the temperature compensation current by a proportional to absolute temperature (PTAT) circuit and the control voltage enabling each pHEMPT transistor to receive its input signal in combination with the gate bias voltage.

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage that varies according to a control voltage. The control voltage can be related to a desired output power of the amplifier and/or to an envelope signal of an input signal to the amplifier. Particular biasing for selectively controlling the stacked transistors to operate in either a saturation region or a triode region is also presented. Benefits of such controlling, including increased linear response of an output power of the amplifier, are also discussed.

An electronic device includes a network monitor configured to acquire network environment information related to a radio frequency (RF) transmission signal; a transceiver configured to generate an envelope signal of the RF transmission signal; a transmission (Tx) module including a power amplifier for receiving the RF transmission signal from the transceiver and amplifying the RF transmission signal; and an envelope tracking (ET) modulator configured to receive the envelope signal from the transceiver and to provide a bias of a power amplifier to correspond to the envelope signal, wherein the ET modulator determines a magnitude of the bias of the power amplifier based on the network environment information acquired by the network monitor.

A radio-frequency signal amplifier circuit that is used in a front-end circuit configured to propagate a radio-frequency transmission signal and a radio-frequency reception signal, includes an amplifier transistor configured to amplify the radio-frequency transmission signal, a bias circuit configured to supply a bias to a signal input terminal of the amplifier transistor, a resistor having one end connected to the bias circuit and the other end connected to the signal input terminal, and an LC series resonance circuit that has one end connected to a node n1 between the resistor and the signal input terminal and the other end connected to a grounding terminal. A resonant frequency fr of the LC series resonance circuit is included in a difference frequency band between the radio-frequency transmission signal and the radio-frequency reception signal.

Multiband power amplifier with cascode switching. A power amplification system can include a first transistor having a base configured to receive an input radio-frequency (RF) signal and having an emitter coupled to a ground potential. The power amplification system can include a plurality of second transistors. Each one of the plurality of second transistors can have a respective emitter coupled to a collector of the first transistor and can be configured to, when biased at a respective base, output an output RF signal at a respective collector. The power amplification system can further include a biasing circuit configured to bias one or more of the plurality of second transistors based on a control signal.

A gate bias circuit for a plurality of GaAs amplifier stages is a transistor coupled to a temperature compensation current received from a CMOS control stage. A plurality of pHEMPT amplifier stages are coupled to the gate bias circuit and to a control voltage which switches the amplifier stage. A selectively controlled stage pass transistor enables a current mirror between the gate bias circuit and each stage amplifying transistor. The penultimate pHEMPT amplifier stage is coupled to a CMOS amplifier. A CMOS circuit provides both the temperature compensation current by a proportional to absolute temperature (PTAT) circuit and the control voltage enabling each pHEMPT transistor to receive its input signal in combination with the gate bias voltage.

Power amplification system with common base pre-amplifier. A power amplification system can include a common base amplifier configured to amplify an input radio-frequency (RF) signal received at an input node to generate an intermediate RF signal at an intermediate node. The power amplification system can further include a power amplifier configured to amplify the intermediate RF signal received at the intermediate node to generate an output RF signal at an output node.

An adaptive linearizer system includes an adaptive linearizer circuit that is configured to pre-distort an input signal based on one or more control signals to generate a pre-distorted signal, and a non-linear high-power amplifier (HPA) having non-linear characteristics that is coupled to the adaptive linearizer circuit. The nonlinear HPA amplifies the pre-distorted signal. The pre-distortion characteristics of the adaptive linearizer circuit provide for countering the non-linear characteristics of the non-linear HPA and compensating a non-linearity of the non-linear HPA.

A bias circuit for power amplifiers is disclosed. A power amplifier bias circuit can include an emitter follower device and an emitter follower mirror device coupled to form a mirror configuration. The emitter follower device can be configured to provide a bias signal for a power amplifier at an output port. The power amplifier bias circuit can include a reference device configured to mirror an amplifying transistor of an amplifying device of the power amplifier. The emitter follower mirror device can be configured to provide a mirror bias signal to the reference device. A node between the emitter follower device and the emitter follower mirror device can have a voltage of approximately twice a base-emitter voltage (2 Vbe) of the amplifying transistor.

An RF amplifier module that has a plurality of amplifiers wherein at least one of the amplifiers is powered via an envelope tracking module. The biasing input of at least one of the amplifiers is provided to the first amplifier to power the first amplifier to reduce power consumption. The first amplifier may also be powered via fixed biasing to provide greater stability of the module.