A bias circuit for a PA. A first transistor has its drain terminal and its gate terminal connected to a first circuit node and its source terminal connected to a first supply terminal, a first current source connected to the first circuit node, and a first resistor connected between the first and second circuit nodes. A second transistor receives a first component of a differential input signal to the PA at its gate terminal, has its drain terminal connected to the second circuit node and its source terminal connected to a second supply terminal, and a third transistor receives a second component of the differential input signal to the PA at its gate terminal, having its drain terminal connected to the second circuit node and its source terminal connected to a second supply terminal. The gates terminals of the second and the third transistors are biased by a first voltage.

A first amplifier circuit in a preceding stage, a second amplifier circuit in a subsequent stage, and a ground external connection terminal are disposed on a substrate. The first and second amplifier circuits each include bipolar transistors, capacitive elements for the respective bipolar transistors, and resistive elements for the respective bipolar transistors. The bipolar transistors each include separate base electrodes, that is, a first base electrode for radio frequency and a second base electrode for biasing. The bipolar transistors of the second amplifier circuit include emitter electrodes connected to the ground external connection terminal. The minimum spacing between the first base electrode and an emitter mesa layer of at least one of the bipolar transistors of the second amplifier circuit is greater than the minimum spacing between the first base electrode and am emitter mesa layer of each of the bipolar transistors of the first amplifier circuit.

Apparatus and methods for regulated voltage distribution are disclosed. Distribution elements can pass a regulated voltage provided by a single voltage regulator to thereby distribute the regulated voltage. A distribution element of the distribution elements can be included in a feedback path that provides a feedback signal to an input of the voltage regulator. The voltage regulator can be a low dropout voltage regulator, for example. The regulated voltage can be used in a variety of applications, for example, as a bias voltage for a power amplifier.

A multiple-mode RF power amplifier includes two power amplifiers, output combiner circuitry, and a switchable impedance circuit. The power amplifiers receive first and second input RF signals and produce first and second amplified RF signals. The output combiner circuitry combines the amplified RF signals to produce a combined amplified RF signal. The switchable impedance circuit has an input terminal coupled to an isolated port of the output combiner circuitry. When the switchable impedance circuit is in a first state, the isolated port is coupled through the switchable impedance circuit to a first impedance to configure the multiple-mode RF power amplifier as a balanced amplifier. When the switchable impedance circuit is in a second or third state, the isolated port is coupled through the switchable impedance circuit to a second or third impedance to configure the multiple-mode RF power amplifier as a first or second type of Doherty power amplifier.

An amplification circuit includes a first amplifier circuit and a second-stage amplifier. The second-stage amplifier is connected to the amplifier to form a multi-stage amplification circuit. The first amplifier circuit includes a first-stage amplifier and a bypass circuit. The bypass circuit includes a first transistor. A first end of the first transistor is coupled to the input end of the first amplifier circuit, a second end of the first transistor is coupled to the output end of the first amplifier circuit, and a third end of the first transistor is coupled to a supply voltage. The first end of the first transistor is further coupled to a first control terminal to receive a control signal for controlling a bias voltage of the first transistor, so as to make the amplification circuit work in different operation modes.

An amplifier arrangement for amplifying an input signal to an output signal for delivering to a load is disclosed. The amplifier arrangement comprises a power splitter configured to receive the input signal and produce split input signals. The amplifier arrangement further comprises a first amplifier branch comprising multiple main amplifier circuits. Output signals of the multiple main amplifier circuits are combined to generate a first output signal. The amplifier arrangement further comprises a second amplifier branch comprising at least one auxiliary amplifier circuit. The at least one auxiliary amplifier circuit is configured to receive a split input signal from the power splitter and produce a second output signal. The amplifier arrangement further comprises a power combiner configured to receive the first and second output signals and produce the output signal for delivering to the load.

Devices and methods related to embedded sensors for dynamic error vector magnitude corrections. In some embodiments, a power amplifier (PA) can include a PA die and an amplification stage implemented on the PA die. The amplification stage can include an array of amplification transistors, with the array being configured to receive and amplify a radio-frequency (RF) signal. The PA can further include a sensor implemented on the PA die. The sensor can be positioned relative to the array of amplification transistors to allow sensing of an operating condition representative of at least some of the amplification transistors. The sensor can be substantially isolated from the RF signal.

Apparatus and methods for providing variable regulated voltages are disclosed. Variable voltage control elements can adjust a regulated voltage provided by a single voltage regulator, thereby providing a variable regulated voltage. The regulated voltage can be used in a variety of applications, for example, as a bias voltage for a power amplifier.

A power amplifier module includes an amplifier transistor and a bias circuit. A first power supply voltage based on a first operation mode or a second power supply voltage based on a second operation mode is supplied to the amplifier transistor. The amplifier transistor receives a first signal and outputs a second signal obtained by amplifying the first signal. The bias circuit supplies a bias current to the amplifier transistor. The bias circuit includes first and second resistors and first and second transistors. The first transistor is connected in series with the first resistor and is turned ON by a first bias control voltage which is supplied when the first operation mode is used. The second transistor is connected in series with the second resistor and is turned ON by a second bias control voltage which is supplied when the second operation mode is used.

Package assemblies for improving heat dissipation of high-power components in microwave circuits are described. A laminate that includes microwave circuitry may have cut-outs that allow high-power components to be mounted directly on a heat slug below the laminate. Electrical connections to circuitry on the laminate may be made with wire bonds. The packaging allows more flexible design and tuning of packaged microwave circuitry.