An amplification system includes a first amplification module, a second amplification module, a third amplification module I, a fourth amplification module I, a first load, a third amplification module II, a fourth amplification module II and a second load. An output terminal of the first amplification module is connected to an input terminal of the second amplification module; output terminals of the second amplification module are connected to an input terminal of the third amplification module I and an input terminal of the third amplification module II. An output terminal of the third amplification module I is connected to an input terminal of the first load through the fourth amplification module I. An output terminal of the third amplification module II is connected to an input terminal of the second load through the fourth amplification module II.

Examples disclosed herein relate to a Doherty Power Amplifier (“DPA”) with integrated second harmonic injection. The DPA includes an amplifier circuit having a carrier amplifier and a peaking amplifier, and a combiner network coupled to the amplifier circuit, the combiner network having a plurality of transmission lines and a LC resonant circuit to inject a second harmonic from the carrier amplifier into the peaking amplifier.

A device to reduce distortion in an amplifier includes an input transistor configured to generate a voltage based on an input signal. The device further includes a diode connected transistor that is configured to sink the current. The diode connected transistor includes an output terminal, and a control terminal, where the output terminal is coupled to a control terminal. The device further includes a current source circuit that coupled to the control terminal. The device additionally includes an impedance element that coupled to the output terminal at a first node and to the control terminal and the current source circuit at a second node.

A device to reduce distortion in an amplifier includes an input transistor configured to generate a voltage based on an input signal. The device further includes a diode connected transistor that is configured to sink the current. The diode connected transistor includes an output terminal, and a control terminal, where the output terminal is coupled to a control terminal. The device further includes a current source circuit that coupled to the control terminal. The device additionally includes an impedance element that coupled to the output terminal at a first node and to the control terminal and the current source circuit at a second node.

A high frequency module includes a first amplifier circuit, a second amplifier circuit, a first matching circuit connected to the first amplifier circuit, and a second matching circuit connected to the second amplifier circuit, wherein the first matching circuit and the second matching circuit are arranged adjacent to each another. The first matching circuit may be provided on an output side of the first amplifier circuit.

The method and system for converging a 5th-generation (5G) communication system for supporting higher data rates beyond a 4th-generation (4G) system with a technology for internet of things (IoT) are provided. The method includes intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. The system includes a power amplification device capable of minimizing the effect of envelope impedance. The power amplification device may be incorporated in a terminal and a base station.

A Doherty power amplifier having a main power amplification device and an auxiliary power amplification device arranged in parallel with the main power amplification device includes a load modulation circuit having a harmonic injection circuit connected with respective outputs of the main power amplification device and the auxiliary power amplification device. The harmonic injection circuit is arranged to provide a phase shift to simultaneously modulate transfer of second harmonic components generated at the main power amplification device to the auxiliary power amplification device and transfer of second harmonic components generated at the auxiliary power amplification device to the main power amplification device, when the main power amplification device and the auxiliary power amplification device are operated at saturation.

A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation.

Doherty power amplifier (PA) devices (e.g., packages and modules) including integrated output combining networks are disclosed. In embodiments, the Doherty PA device includes a first amplifier die having a first transistor with a first output terminal at which a first amplified signal is generated, a second amplifier die having a second transistor with a second output terminal at which a second amplified signal is generated, and an output combining network. The output combining network includes, in turn, a combining node integrally formed with the second amplifier die and electrically coupled to the second output terminal. At least one die-to-die bond wire electrically couples the first output terminal to the combining node. The at least one die-to-die bond wire has an electrical length, which is results in a 90 degree phase shift imparted to the first amplified signal between the first output terminal and the combining node.

A power splitter that amplifies an input radio-frequency (RF) signal. The power splitter uses a single transistor in a common emitter stage of a cascode amplifier and two or more common base stages of the cascode amplifier to amplify and to split the input RF signal. A common base biasing signal can be used to simultaneously enable two or more of the common base stages to generate two or more amplified RF output signals.