Embodiments disclosed herein include resonators, such as resonant fin transistors (RFTs). In an embodiment a resonator comprises a substrate, a set of contact fins over the substrate, a first contact proximate to a first end of the set of contact fins, and a second contact proximate to a second end of the set of contact fins. In an embodiment, the resonator further comprises a set of skip fins over the substrate and adjacent to the set of contact fins. In an embodiment, the resonator further comprises a gate electrode over the set of contact fins and the set of skip fins, wherein the gate electrode is between the first contact and the second contact.

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

Frequency stabilization is provided in a microelectromechanical systems (MEMS) oscillator via tunable internal resonance (IR). A device comprises a MEMS resonator comprising a stepped-beam structure that is a thin-layer structure. The resonator may be configured to implement IR. The stepped-beam structure may be configured to provide flexibility to adjust modal frequencies into a n:m ratio, wherein n and m are integers. The thin-layer structure provides frequency tunability by controlling the mid-plane stretching effect with an applied DC bias. The thin-layer structure compensates for a frequency mismatch from a n:m ratio due to a fabrication error. The MEMS resonator may be an oscillator.

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

Frequency stabilization is provided in a microelectromechanical systems (MEMS) oscillator via tunable internal resonance (IR). A device comprises a MEMS resonator comprising a stepped-beam structure that is a thin-layer structure. The resonator may be configured to implement IR. The stepped-beam structure may be configured to provide flexibility to adjust modal frequencies into a n:m ratio, wherein n and m are integers. The thin-layer structure provides frequency tunability by controlling the mid-plane stretching effect with an applied DC bias. The thin-layer structure compensates for a frequency mismatch from a n:m ratio due to a fabrication error. The MEMS resonator may be an oscillator.

A manufacturing method is provided for a resonance device that includes preparing a collective board including first power supply terminals electrically connected to upper electrodes of a plurality of resonators, and a first coupling wire that electrically connects two or more of the first power supply terminals. The method includes dividing the collective board into a plurality of resonance devices. Moreover, the first power supply terminals include a first metal layer and a second metal layer covering the first metal layer. The first coupling wire includes a portion of the first metal layer that extends from a region covered with the second metal layer. The method further includes removing the portion of the first metal layer extending from the region covered with the second metal layer before the dividing the collective board into the plurality of resonance devices.

Method for forming an integrated acoustic device. A thin film piezoelectric acoustic transducer is epitaxially formed on a host substrate and is then transferred to a functional target substrate wherein physical phenomena from the piezoelectric transducer and the arbitrary functional substrate interact to form a hybrid acoustic microsystem comprising the piezoelectric transducer and the arbitrary functional substrate.

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

A microelectromechanical system with at least one partly mobile mass element which is suspended from a fixed support by one or more suspension units. Each suspension unit comprises first springs which extend from the fixed support to the partly mobile mass element, and second springs which also extend from the fixed support to the partly mobile mass element. Each second spring is substantially parallel and adjacent to one first spring. The first springs are electrically isolated from the second springs, and the microelectromechanical system comprises a voltage source configured to apply a frequency tuning voltage between the one or more first springs and the one or more second springs.

A continuous or distributed resonator geometry is defined such that the fabrication process used to form a spring mechanism also forms an effective mass of the resonator structure. Proportional design of the spring mechanism and/or mass element geometries in relation to the fabrication process allows for compensation of process-tolerance-induced fabrication variances. As a result, a resonator having increased frequency accuracy is achieved.